Patents by Inventor Thierry J. Pinguet

Thierry J. Pinguet has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220260775
    Abstract: End-face coupling structures within an electrical backend are provided via photonic integrated circuit (PIC), comprising: a first plurality of spacer layers; a second plurality of etch-stop layers, wherein each etch-stop layer of the second plurality of etch-stop layers is located between two spacer layers of the first plurality of spacer layers; and an optical coupler comprising a plurality of waveguides arranged as a waveguide array configured to receive an optical signal in a direction of travel, wherein each waveguide of the plurality of waveguides is located at a layer interface defined between an etch-stop layer and a spacer layer. Portions of the PIC can be formed by depositing layers of spacer and etch-stop materials in which cavities are formed to define the waveguides when the waveguide material is deposited or interconnects when a metal is deposited therein.
    Type: Application
    Filed: February 18, 2021
    Publication date: August 18, 2022
    Inventors: Roman BRUCK, Thierry J. PINGUET, Attila MEKIS
  • Patent number: 7616904
    Abstract: A germanium on silicon waveguide photodetector disposed on a silicon on insulator (SOI) substrate. The photodetector is incorporated into a section of a planar silicon waveguide on the substrate. The photodetector generates an electric current as an infrared optical signal travels through the photodetector.
    Type: Grant
    Filed: February 23, 2007
    Date of Patent: November 10, 2009
    Assignee: Luxtera, Inc.
    Inventors: Lawrence C. Gunn, III, Thierry J. Pinguet, Maxime Jean Rattier, Giovanni Capellini
  • Patent number: 7586608
    Abstract: This application describes, among others, wafer designs, testing systems and techniques for wafer-level optical testing by coupling probe light from top of the wafer.
    Type: Grant
    Filed: March 28, 2007
    Date of Patent: September 8, 2009
    Assignee: Luxtera, Inc.
    Inventors: Lawrence C. Gunn, III, Roman Malendevich, Thierry J. Pinguet, Maxime Jean Rattier, Myles Sussman, Jeremy Witzens
  • Patent number: 7453132
    Abstract: A germanium on silicon waveguide photodetector disposed on a silicon on insulator (SOI) substrate. The photodetector is incorporated into a section of a planar silicon waveguide on the substrate. The photodetector generates an electric current as an infrared optical signal travels through the photodetector.
    Type: Grant
    Filed: June 19, 2003
    Date of Patent: November 18, 2008
    Assignee: Luxtera Inc.
    Inventors: Lawrence C. Gunn, III, Thierry J. Pinguet, Maxime Jean Rattier, Giovanni Capellini
  • Patent number: 7298945
    Abstract: A polarization splitting grating coupler (PSGC) connects an optical signal from an optical element, such as a fiber, to an optoelectronic integrated circuit. The PSGC separates a received optical signal into two orthogonal polarizations and directs the two polarizations to separate waveguides on an integrated circuit. Each of the two separated polarizations can then be processed, as needed for a particular application, by the integrated circuit. A PSGC can also operate in the reverse direction, and couple two optical signals from an integrated circuit to two respective orthogonal polarizations of one optical output signal sent off chip to an optical fiber.
    Type: Grant
    Filed: March 17, 2006
    Date of Patent: November 20, 2007
    Assignee: Luxtera, Inc.
    Inventors: Lawrence C. Gunn, III, Thierry J. Pinguet, Maxime J. Rattier, Jeremy Witzens
  • Patent number: 7262852
    Abstract: This application describes, among others, wafer designs, testing systems and techniques for wafer-level optical testing by coupling probe light from top of the wafer.
    Type: Grant
    Filed: November 14, 2005
    Date of Patent: August 28, 2007
    Assignee: Luxtera, Inc.
    Inventors: Lawrence C. Gunn, III, Roman Malendevich, Thierry J. Pinguet, Maxime Jean Rattier, Myles Sussman, Jeremy Witzens
  • Patent number: 7260293
    Abstract: Various configurations of elongate scattering elements in an optical waveguide grating coupler for coupling light between a planar waveguide and an optical element such as an optical fiber, where the light may have a Gaussian intensity distribution. The elongate scattering elements are preferably curved, and in some embodiments, the scattering elements have elliptically curved shape. One or more of the elongate scattering elements may be segmented into various geometrical shapes, such as rectangular, square, circular and elliptical. The elongate scattering elements have at least one characteristic selected from the group consisting of grating width, height, spacing, depth and index of refraction forming the elongate scattering elements, where the magnitude of the at least one characteristic varies irregularly with position along the guiding portion of the optical waveguide grating coupler.
    Type: Grant
    Filed: December 6, 2005
    Date of Patent: August 21, 2007
    Assignee: Luxtera, Inc.
    Inventors: Lawrence C. Gunn, III, Thierry J. Pinguet, Maxime Jean Rattier
  • Patent number: 7260289
    Abstract: Various configurations of elongate scattering elements in an optical waveguide grating coupler for coupling light between a planar waveguide and an optical element such as an optical fiber, where the light may have a Gaussian intensity distribution. The elongate scattering elements are preferably curved, and in some embodiments, the scattering elements have elliptically curved shape. One or more of the elongate scattering elements may be segmented into various geometrical shapes, such as rectangular, square, circular and elliptical. The elongate scattering elements have at least one characteristic selected from the group consisting of grating width, height, spacing, depth and index of refraction forming the elongate scattering elements, where the magnitude of the at least one characteristic varies irregularly with position along the guiding portion of the optical waveguide grating coupler.
    Type: Grant
    Filed: February 10, 2004
    Date of Patent: August 21, 2007
    Assignee: Luxtera, Inc.
    Inventors: Lawrence C. Gunn, III, Thierry J. Pinguet, Maxime J. Rattier
  • Patent number: 7251403
    Abstract: In a standard CMOS process, a layer of metallic salicide can be deposited on those selected portions of an integrated circuit, where it is desired to have metallic contacts for electronic components, such as transistors. The deposition of a salicide into optical elements such as the core of an optical waveguide or a light scatterer will damage the elements and prevent the passage of light through those sections of the elements. Prior to the deposition of the salicide, a salicide blocking layer is deposited on those parts of an integrated circuit, such as on an optical waveguide or a light scatterer, which are to be protected from damage by the deposition of salicide. The salicide blocking layer is used as one layer of the cladding of a silicon waveguide and a light scatterer.
    Type: Grant
    Filed: July 15, 2005
    Date of Patent: July 31, 2007
    Assignee: Luxtera, Inc.
    Inventors: Lawrence C. Gunn, III, Thierry J. Pinguet, Maxime Jean Rattier
  • Patent number: 7251408
    Abstract: High speed optical modulators can be made of a lateral PN diode formed in a silicon optical rib waveguide, disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Each of the doped regions can have a stepped or gradient doping profile within it or several doped sections with different doping concentrations. Forming the doped regions of a PN diode modulator with stepped or gradient doping profiles can optimize the trade off between the series resistance of the PN diode and the optical loss in the center of the waveguide due to the presence of dopants.
    Type: Grant
    Filed: April 5, 2006
    Date of Patent: July 31, 2007
    Assignee: Luxtera, Inc.
    Inventors: Lawrence C. Gunn, III, Roger Koumans, Bing Li, Guo Liang Li, Thierry J. Pinguet
  • Patent number: 7245803
    Abstract: An optical waveguide grating coupler for coupling light between a planar waveguide and an optical element such as an optical fiber. The optical waveguide grating coupler includes a grating comprising a plurality of elongate scattering elements. The optical waveguide grating coupler is preferably flared, and in various embodiments has hyperbolically shaped sidewalls. The elongate scattering elements are preferably curved, and in some embodiments, the scattering elements have elliptically curved shapes. Preferably, the elongated scattering elements have grating widths selected to accommodate the desired optical intensity distribution.
    Type: Grant
    Filed: February 10, 2004
    Date of Patent: July 17, 2007
    Assignee: Luxtera, Inc.
    Inventors: Lawrence C. Gunn, III, Thierry J. Pinguet, Maxime J. Rattier
  • Patent number: 7231105
    Abstract: An apparatus and method for splitting a received optical signal into its orthogonal polarizations and sending the two polarizations on separate dual integrated waveguides to other systems on chip for further signal processing. The present invention provides an apparatus and method for facilitating the processing of optical signals in planar waveguides received from optical fibers.
    Type: Grant
    Filed: March 17, 2006
    Date of Patent: June 12, 2007
    Assignee: Luxtera, Inc.
    Inventors: Lawrence C. Gunn, III, Thierry J. Pinguet, Maxime Jean Rattier
  • Patent number: 7218826
    Abstract: A standard CMOS process is used to fabricate optical, optoelectronic and electronic devices at the same time on a monolithic integrated circuit. FIG. 12 shows an active waveguide formed by a standard CMOS process on a five layer substrate. The waveguide is a silicon strip loaded waveguide with a three layer core made of a silicon strip on a silicon slab with a silicon dioxide layer between the strip and slab. The active waveguide has two doped regions in the silicon slab adjacent to and on either side of the waveguide. FIG. 12A is a table summarizing the elements of the waveguide of FIG. 12 and the CMOS transistors of FIGS. 1 and 2, which are formed from the same materials at the same time on the same silicon substrate. In a standard CMOS process, a layer of metallic salicide can be deposited on those selected portions of an integrated circuit, where it is desired to have metallic contacts for electronic components, such as transistors.
    Type: Grant
    Filed: August 29, 2005
    Date of Patent: May 15, 2007
    Assignee: Luxtera, Inc.
    Inventors: Lawrence C. Gunn, III, Thierry J. Pinguet, Maxime Jean Rattier, Bing Li
  • Patent number: 7184626
    Abstract: This application describes, among others, wafer designs, testing systems and techniques for wafer-level optical testing by coupling probe light from top of the wafer.
    Type: Grant
    Filed: April 7, 2004
    Date of Patent: February 27, 2007
    Assignee: Luxtera, Inc
    Inventors: Lawrence C. Gunn, III, Roman Malendevich, Thierry J. Pinguet, Maxime J. Rattier, Myles Sussman, Jeremy Witzens
  • Patent number: 7184627
    Abstract: An optical wavelength grating coupler incorporating one or more distributed Bragg reflectors (DBR) or other reflective elements to enhance the coupling efficiency thereof. The grating coupler has a grating comprising a plurality of scattering elements adapted to scatter light along a portion of an optical path, and the one or more DBRs are positioned with respect to the grating such that light passing through the grating towards the substrate of the grating coupler is reflected back by DBRs toward the grating. The DBR comprises a multilayer stack of various materials and may be formed on the substrate of the grating coupler. The grating coupler may include a gas-filled cavity, where the cavity is formed by a conventional etching process and is used to reflect light toward the grating. The grating coupler may also incorporate an anti-reflection coating to reduce reflective loss on the surface of the grating.
    Type: Grant
    Filed: November 16, 2005
    Date of Patent: February 27, 2007
    Inventors: Lawrence C. Gunn, III, Thierry J. Pinguet, Maxime Jean Rattier
  • Patent number: 7184625
    Abstract: An optical wavelength grating coupler incorporating one or more distributed Bragg reflectors (DBR) or other reflective elements to enhance the coupling efficiency thereof. The grating coupler has a grating comprising a plurality of scattering elements adapted to scatter light along a portion of an optical path, and the one or more DBRs are positioned with respect to the grating such that light passing through the grating towards the substrate of the grating coupler is reflected back by DBRs toward the grating. The DBR comprises a multilayer stack of various materials and may be formed on the substrate of the grating coupler. The grating coupler may include a gas-filled cavity, where the cavity is formed by a conventional etching process and is used to reflect light toward the grating. The grating coupler may also incorporate an anti-reflection coating to reduce reflective loss on the surface of the grating.
    Type: Grant
    Filed: February 10, 2004
    Date of Patent: February 27, 2007
    Assignee: Luxtera, Inc
    Inventors: Lawrence C. Gunn, III, Thierry J. Pinguet, Maxime J. Rattier
  • Patent number: 7162124
    Abstract: A fiber to chip coupling connecting an optical fiber to an integrated circuit. A section of fiber is laid on top of the surface of the chip, where the end of the fiber has been cut at an angle to form an angled tip. The angled tip has a flat surface which reflects light down to a waveguide grating coupler disposed on the integrated circuit. Light is reflected off the reflective surface of the angled tip by total internal reflection. The waveguide grating coupler is designed to accept the slightly diverging light beam from the reflective surface of the angled tip of the fiber. Light can also propagate through the fiber to chip coupler in the opposite direction, up from the substrate through the waveguide grating and into an optical fiber after bouncing off the reflective surface of the angled tip.
    Type: Grant
    Filed: March 11, 2004
    Date of Patent: January 9, 2007
    Assignee: Luxtera, Inc.
    Inventors: Lawrence C. Gunn, III, Thierry J. Pinguet, Maxime J. Rattier, Zhen-Li Ji, Jeremy Witzens
  • Patent number: 7139455
    Abstract: Electronically controllable arrayed waveguide gratings (AWGs) with integrated phase error compensation for each individual arm of the array of waveguides. These AWGs and associated methods for static and dynamic phase compensation enable the fabrication of tunable AWGs which can track one or more drifting channels of an AWG.
    Type: Grant
    Filed: March 17, 2004
    Date of Patent: November 21, 2006
    Assignee: Luxtera
    Inventors: Lawrence C. Gunn, III, Thierry J. Pinguet, Maxime J. Rattier, Jeremy Witzens
  • Patent number: 7136544
    Abstract: High speed optical modulators can be made of a lateral PN diode formed in a strip loaded optical waveguide on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Due to differences in fabrication methods, forming strip loaded waveguides with consistent properties for use in PN diode optical modulators is much easier than fabricating similar rib waveguides.
    Type: Grant
    Filed: August 11, 2004
    Date of Patent: November 14, 2006
    Assignee: Luxtera, Inc.
    Inventors: Lawrence C. Gunn, III, Roger Koumans, Bing Li, Guo Liang Li, Thierry J. Pinguet
  • Patent number: 7136563
    Abstract: A standard CMOS process is used to fabricate optical, optoelectronic and electronic devices at the same time on a monolithic integrated circuit. A polysilicon strip loaded waveguide is used as an example to illustrate the invention. The waveguide has a two layer core made of a polysilicon strip on a silicon slab. In a standard CMOS process, a layer of metallic salicide is deposited for metallic contacts for electronic components, such as transistors. In the present invention, prior to the deposition of the salicide, a salicide blocking layer is selectively deposited for protecting silicon waveguide against damages. The salicide blocking layer is used as one layer of the cladding of a silicon waveguide.
    Type: Grant
    Filed: July 7, 2005
    Date of Patent: November 14, 2006
    Assignee: Luxtera Inc.
    Inventors: Lawrence C. Gunn, III, Thierry J. Pinguet, Maxime Jean Rattier