Abstract: An apparatus comprises one or more metal-oxide-semiconductor field effect transistors, a charge pump, and a driver circuit. The one or more metal-oxide-semiconductor field effect transistors are generally connected in series between a supply voltage and an output terminal. The charge pump may be configured to generate a voltage of sufficient magnitude relative to the supply voltage to switch the one or more metal-oxide-semiconductor field effect transistors into a conductive state. The driver circuit is generally coupled between the charge pump and the one or more metal-oxide-semiconductor field effect transistors. The driver circuit may be configured to drive the one or more metal-oxide-semiconductor field effect transistors to provide at least one of power switching, reverse polarity protection, power switching with reverse polarity protection, or over voltage inhibition.

Abstract: An apparatus comprises one or more metal-oxide-semiconductor field effect transistors, a charge pump, and a driver circuit. The one or more metal-oxide-semiconductor field effect transistors are generally connected in series between a supply voltage and an output terminal. The charge pump may be configured to generate a voltage of sufficient magnitude relative to the supply voltage to switch the one or more metal-oxide-semiconductor field effect transistors into a conductive state. The driver circuit is generally coupled between the charge pump and the one or more metal-oxide-semiconductor field effect transistors. The driver circuit may be configured to drive the one or more metal-oxide-semiconductor field effect transistors to provide at least one of power switching, reverse polarity protection, power switching with reverse polarity protection, or over voltage inhibition.