Abstract: A CMOS image sensor for a code reader in an optical code recognition system incorporates a digital processing circuit that applies a calculation process to the capture image data as said data acquired by the sequential readout circuit of the sensor, in order to calculate a macro-image from the capture image data, which corresponds to location information of code(s) in the capture image, and transmit this macro-image in the image frame following the capture image data, in the footer of the frame.

Abstract: A CMOS image sensor for a code reader in an optical code recognition system incorporates a digital processing circuit that applies a calculation process to the capture image data as said data acquired by the sequential readout circuit of the sensor, in order to calculate a macro-image from the capture image data, which corresponds to location information of code(s) in the capture image, and transmit this macro-image in the image frame following the capture image data, in the footer of the frame.

Abstract: The invention provides a method for acquiring an image of a target code, which allows the CMOS sensor, after the reader has been triggered to acquire a target code, to rapidly determine, and internally, a desirable exposure-time value Topt for the image capture of this code.

Abstract: The invention provides a method for acquiring an image of a target code, which allows the CMOS sensor, after the reader has been triggered to acquire a target code, to rapidly determine, and internally, a desirable exposure-time value Topt for the image capture of this code.

Abstract: Method for synchronizing digital data sent in series by a transmitter having a clock frequency freq1 to a receiver having a clock frequency freq2, comprising the steps a) to d) iterated until a stoppage condition is met and a step e): a) sending a digital datum from the transmitter to the receiver; b) generating N channels, each ith channel containing the datum, and being time shifted with respect to the (i?1)th channel, with N?3 and 2<i<N; c) sampling the N channels at the frequency freq2; d) comparing the N channels in groups of (2m+1) successive channels, m?1 and such that (2m+1)?N, and selecting groups of (2m+1) channels in which the data of these channels are identical in each iteration; e) selecting a channel belonging to the selected groups, the data contained in this channel being considered to be synchronized and in phase with the receiver and defining a variable P equal to the value i of the selected channel.

Abstract: The invention provides a linear sensor including a row 100 of N regularly spaced pixels that are formed in a semiconductor substrate, and a circuit for reading out the N pixels, which delivers an output signal for each of the N pixels of the row, characterized in that the N pixels comprise image-capturing pixels that have a useful photosensitive area in the shape of a rectangle R that is higher than it is wide, where the width is in the direction of the row and the height is in the perpendicular direction, and at least two spaced-apart pairs of alignment-detecting pixels PPL, PPR, wherein the detecting pixels of each pair are pixels P1, P2 that are adjacent in the row 100 of pixels and the useful photosensitive area DT1, DT2 of the detecting pixels has a width that varies monotonically in the height direction, but in opposite directions for the two detecting pixels of a given pair.

Abstract: The invention provides a linear sensor including a row 100 of N regularly spaced pixels that are formed in a semiconductor substrate, and a circuit for reading out the N pixels, which delivers an output signal for each of the N pixels of the row, characterized in that the N pixels comprise image-capturing pixels that have a useful photosensitive area in the shape of a rectangle R that is higher than it is wide, where the width is in the direction of the row and the height is in the perpendicular direction, and at least two spaced-apart pairs of alignment-detecting pixels PPL, PPR, wherein the detecting pixels of each pair are pixels P1, P2 that are adjacent in the row 100of pixels and the useful photosensitive area DT1, DT2 of the detecting pixels has a width that varies monotonically in the height direction, but in opposite directions for the two detecting pixels of a given pair.

Abstract: The invention relates to color-image sensors. To benefit both from a good luminance resolution and a color accuracy that is not excessively degraded by the sensitivity of silicon to near-infrared radiation, the invention proposes to produce a mosaic of pixels comprising colored pixels (R), (G), (B), coated with color filters, which are distributed in the matrix, with white pixels (T) not coated with color filters and which are distributed in the matrix. The colored pixels include photodiodes constructed differently from the photodiodes of the white pixels, the different construction being such that the photodiodes of the colored pixels have a lower sensitivity to infrared radiation than the photodiodes of the white pixels.

Abstract: The invention relates to colour-image sensors. To benefit both from a good luminance resolution and a colour accuracy that is not excessively degraded by the sensitivity of silicon to near-infrared radiation, the invention proposes to produce a mosaic of pixels comprising coloured pixels (R), (G), (B), coated with colour filters, which are distributed in the matrix, with white pixels (T) not coated with colour filters and which are distributed in the matrix. The coloured pixels include photodiodes constructed differently from the photodiodes of the white pixels, the different construction being such that the photodiodes of the coloured pixels have a lower sensitivity to infrared radiation than the photodiodes of the white pixels.

Abstract: The invention relates to image sensors, and more particularly to matrix sensors having active pixels in CMOS technology. According to the invention, a method for imaging a scene with a very short integration time, by using a standard image sensor comprising a matrix of pixels, comprising photodiodes, and charge storage nodes, is provided. Two images of the same scene are produced under identical light conditions, one of the images corresponding to integration of charges during a first time interval with a duration Tint and the other image corresponding to a second time interval with a duration T?int longer than Tint, and a difference between these two images is established, representing an image integrated during a time interval T?int?Tint. The light may be provided by a light pulse (IMP). This method may be used for observing points in a scene that lie at a well-determined distance, the brevity of the integration time allowing good precision of the observation distance.

Abstract: The invention relates to image sensors of scanner type observing one image line at a time. According to the invention, only two lines of pixels are used, operating in TDI mode (summation of the charge of two pixels seeing the same image point successively) but using active pixels with a charge-voltage conversion within the pixel. The pixels of like rank of the two lines each use a photodiode and a charge storage node with a transfer gate adjacent to the photodiode and to the storage node for transferring the charge accumulated in the photodiode to the charge storage node. The storage node is shared between the two pixels of like rank, and the charge of the two photodiodes is transferred successively into this node before the reading of the potential taken by the node. The time interval which separates the two charge transfers corresponds substantially to the time which separates the transit of an image line past the first line of pixels and then past the second.

Abstract: The invention relates to an image sensor specially adapted to vision in low-light conditions (notably night vision).The sensor is formed on an integrated circuit chip starting from a silicon substrate. It comprises: a matrix of rows and columns of active pixels each comprising at least one photodiode and transistors, control circuits for the matrix, external to the matrix, and signal read circuits, external to the matrix. The photodiodes of the sensor are formed within an active layer of single-crystal silicon whose resistivity is at least 500 ohms·cm if this active layer is an epitaxial layer grown on the silicon substrate and at least 2000 ohms·cm if this active layer consists of the upper part of the silicon substrate.

Abstract: The invention relates to image sensors, and more particularly to matrix sensors having active pixels in CMOS technology. According to the invention, a method for imaging a scene with a very short integration time, by using a standard image sensor comprising a matrix of pixels, comprising photodiodes, and charge storage nodes, is provided. Two images of the same scene are produced under identical light conditions, one of the images corresponding to integration of charges during a first time interval with a duration Tint and the other image corresponding to a second time interval with a duration T?int longer than Tint, and a difference between these two images is established, representing an image integrated during a time interval T?int?Tint. The light may be provided by a light pulse (IMP). This method may be used for observing points in a scene that lie at a well-determined distance, the brevity of the integration time allowing good precision of the observation distance.

Abstract: An image sensor for gathering images at one and the same time at low illumination level and at high illumination level is described. The sensor operates with a double integration time at each frame. Two successive charge transfers from a photodiode to a storage node are performed, the first after a first duration, the second after a second duration different from the first. The potential of the storage node after the first transfer of charge is sampled in a first capacitor of the reading circuit. The potential after a reinitialization of the storage node is sampled in a second capacitor. A level of potential taken after the second transfer is conditionally resampled in the first capacitor. The condition of the resampling is a condition of signal level after the first transfer. This level is applied to the differential amplifier of a ramp-type converter for a short duration of ramp.

Abstract: The invention relates to image sensors of scanner type observing one image line at a time. According to the invention, only two lines of pixels are used, operating in TDI mode (summation of the charge of two pixels seeing the same image point successively) but using active pixels with a charge-voltage conversion within the pixel. The pixels of like rank of the two lines each use a photodiode and a charge storage node with a transfer gate adjacent to the photodiode and to the storage node for transferring the charge accumulated in the photodiode to the charge storage node. The storage node is shared between the two pixels of like rank, and the charge of the two photodiodes is transferred successively into this node before the reading of the potential taken by the node. The time interval which separates the two charge transfers corresponds substantially to the time which separates the transit of an image line past the first line of pixels and then past the second.

Abstract: An image sensor for gathering images at one and the same time at low illumination level and at high illumination level is described. The sensor operates with a double integration time at each frame. Two successive charge transfers from a photodiode to a storage node are performed, the first after a first duration, the second after a second duration different from the first. The potential of the storage node after the first transfer of charge is sampled in a first capacitor of the reading circuit. The potential after a reinitialization of the storage node is sampled in a second capacitor. A level of potential taken after the second transfer is conditionally resampled in the first capacitor. The condition of the resampling is a condition of signal level after the first transfer. This level is applied to the differential amplifier of a ramp-type converter for a short duration of ramp.

Abstract: The invention relates to matrix-array image sensors with MOS-technology active pixels, comprising a matrix-array of pixels arranged in rows and columns. To read the signal from a pixel, the reset potential present on a column conductor is sampled in two capacitors.

Abstract: The invention relates to image sensors using a chip with cut corners. The sensor comprises a chip with cut corners comprising a matrix (10) of horizontal lines and vertical columns of photosensitive members, the matrix having a generally rectangular shape of horizontal width W and having four bevels, the sensor comprising as many current or voltage read blocks as there are matrix columns, in order to read the image signals detected by the photosensitive members, characterized in that the current or voltage read blocks are placed in a row (30, 30?) along a horizontal edge of the matrix of width W? and are all housed within a vertical strip, the width W1 of which is substantially less than the maximum width W of the matrix. There are two superposed rows of current read blocks with blocks distributed at the same pitch as the pixel columns, or there is a single row with read blocks distributed with a pitch less than that of the pixel columns.

Abstract: The invention relates to matrix-array image sensors with MOS-technology active pixels, comprising a matrix-array of pixels arranged in rows and columns. To read the signal from a pixel, the reset potential present on a column conductor is sampled in two capacitors.

Abstract: The invention relates to matrix image sensors. It applies most particularly to intraoral dental radiology sensors. The invention provides a sensor architecture comprising a column decoder controlling select conductors of a column, and a row decoder controlling select conductors of a row. The pixels of a column are connected to a signal conductor that extends along the column and goes toward an analog multiplexer extending within the pixel matrix between two rows of pixels of the matrix. The multiplexer is controlled via the column select conductors coming from the decoder and it transmits the signal from a signal conductor of a selected column to an output conductor extending parallel to the rows. A signal sampling circuit common to all the columns is connected at the end of the output conductor of the multiplexer. An increase in matrix area is achieved by in practice losing only a single image row.