Abstract: An apparatus and method for optical probing of a DUT is disclosed. The system enables identifying, localizing and classifying faulty devices within the DUT. A selected area of the DUT is imaged while the DUT is receiving test signals, which may be static or dynamic, i.e., causing certain of the active devices to modulate. Light from the DUT is collected and is passed through a transparent diffracting grating prior to imaging it by a sensor and converting it into an electrical signal. The resulting image includes the zero order and first order diffraction of the grating. The grating is configured such that the zero order is in registration with emission sites imaged when the grating is outside the optical path.

Abstract: An apparatus and method for optical probing of a DUT is disclosed. The system enables identifying, localizing and classifying faulty devices within the DUT. A selected area of the DUT is imaged while the DUT is receiving test signals, which may be static or dynamic, i.e., causing certain of the active devices to modulate. Light from the DUT is collected and is passed through a transparent diffracting grating prior to imaging it by a sensor and converting it into an electrical signal. The resulting image includes the zero order and first order diffraction of the grating. The grating is configured such that the zero order is in registration with emission sites imaged when the grating is outside the optical path.

Abstract: A method can be used for detecting defects in an electronic integrated circuit that includes a power input and a data input. The electronic integrated circuit is powered with a periodic power signal having a frequency and an input signal is applied to the data input. A surface of the electronic integrated circuit is swept with a laser beam. A first image is generated using a laser beam reflected from the surface and a second image is generated using a selected part of the laser beam reflected from the surface. The selected part of the reflected laser beam has a frequency that corresponds to the frequency of the power signal. Defects in the integrated circuit can be detected by superposing the first image and the second image.

Abstract: A method can be used for detecting defects in an electronic integrated circuit that includes a power input and a data input. The electronic integrated circuit is powered with a periodic power signal having a frequency and an input signal is applied to the data input. A surface of the electronic integrated circuit is swept with a laser beam. A first image is generated using a laser beam reflected from the surface and a second image is generated using a selected part of the laser beam reflected from the surface. The selected part of the reflected laser beam has a frequency that corresponds to the frequency of the power signal. Defects in the integrated circuit can be detected by superposing the first image and the second image.

Abstract: A test structure for integrated electronic circuits having a substantially planar substrate coated with a plurality of metallization layers comprises a switching element formed on the surface of the substrate. It also comprises a tunnel formed in one or more metallization layers between the top of the switching element and the front side of the integrated circuit. This tunnel is designed to channel photons emitted by the switching element towards the front side.

Abstract: A buried oxide layer of an SOI substrate beneath a structure electrically isolated from the rest of a semiconductor device is made to break down so as to open a bias path for the substrate through the structure. It then suffices to connect the electrical ground of the semiconductor device to this bias path so that the ions flow away into the substrate during a focused ion beam treatment of the semiconductor device.

Abstract: A buried oxide layer of an SOI substrate beneath a structure electrically isolated from the rest of a semiconductor device is made to break down so as to open a bias path for the substrate through the structure. It then suffices to connect the electrical ground of the semiconductor device to this bias path so that the ions flow away into the substrate during a focused ion beam treatment of the semiconductor device.