Patents by Inventor Thierry Yao
Thierry Yao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10490549Abstract: A semiconductor device includes a floating buried doped region, a first doped region disposed between the floating buried doped region and a first major surface, and a semiconductor region disposed between the floating buried doped region and a second major surface. A trench isolation structure extends from the first major surface and terminates within the semiconductor region and the floating buried doped region abuts the trench isolation structure. A second doped region is disposed in the first doped region has an opposite conductivity type to the first doped region. A first isolation device is disposed in the first doped region and is configured to divert current injected into the semiconductor device from other regions thereby delaying the triggering of an internal SCR structure. In one embodiment, a second isolation structure is disposed within the first doped region and is configured to disrupt a leakage path along a sidewall surface of the trench isolation structure.Type: GrantFiled: January 10, 2019Date of Patent: November 26, 2019Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Moshe Agam, Johan Camiel Julia Janssens, Jaroslav Pjencak, Thierry Yao, Mark Griswold, Weize Chen
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Publication number: 20190148368Abstract: A semiconductor device includes a floating buried doped region, a first doped region disposed between the floating buried doped region and a first major surface, and a semiconductor region disposed between the floating buried doped region and a second major surface. A trench isolation structure extends from the first major surface and terminates within the semiconductor region and the floating buried doped region abuts the trench isolation structure. A second doped region is disposed in the first doped region has an opposite conductivity type to the first doped region. A first isolation device is disposed in the first doped region and is configured to divert current injected into the semiconductor device from other regions thereby delaying the triggering of an internal SCR structure. In one embodiment, a second isolation structure is disposed within the first doped region and is configured to disrupt a leakage path along a sidewall surface of the trench isolation structure.Type: ApplicationFiled: January 10, 2019Publication date: May 16, 2019Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Moshe AGAM, Johan Camiel Julia JANSSENS, Jaroslav PJENCAK, Thierry YAO, Mark GRISWOLD, Weize CHEN
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Patent number: 10224323Abstract: A semiconductor device includes a floating buried doped region, a first doped region disposed between the floating buried doped region and a first major surface, and a semiconductor region disposed between the floating buried doped region and a second major surface. A trench isolation structure extends from the first major surface and terminates within the semiconductor region and the floating buried doped region abuts the trench isolation structure. A second doped region is disposed in the first doped region has an opposite conductivity type to the first doped region. A first isolation device is disposed in the first doped region and is configured to divert current injected into the semiconductor device from other regions thereby delaying the triggering of an internal SCR structure. In one embodiment, a second isolation structure is disposed within the first doped region and is configured to disrupt a leakage path along a sidewall surface of the trench isolation structure.Type: GrantFiled: August 4, 2017Date of Patent: March 5, 2019Assignee: Semiconductor Components Industries, LLCInventors: Moshe Agam, Johan Camiel Julia Janssens, Jaroslav Pjencak, Thierry Yao, Mark Griswold, Weize Chen
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Publication number: 20190043856Abstract: A semiconductor device includes a floating buried doped region, a first doped region disposed between the floating buried doped region and a first major surface, and a semiconductor region disposed between the floating buried doped region and a second major surface. A trench isolation structure extends from the first major surface and terminates within the semiconductor region and the floating buried doped region abuts the trench isolation structure. A second doped region is disposed in the first doped region has an opposite conductivity type to the first doped region. A first isolation device is disposed in the first doped region and is configured to divert current injected into the semiconductor device from other regions thereby delaying the triggering of an internal SCR structure. In one embodiment, a second isolation structure is disposed within the first doped region and is configured to disrupt a leakage path along a sidewall surface of the trench isolation structure.Type: ApplicationFiled: August 4, 2017Publication date: February 7, 2019Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Moshe AGAM, Johan Camiel Julia JANSSENS, Jaroslav PJENCAK, Thierry YAO, Mark GRISWOLD, Weize CHEN
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Patent number: 10181569Abstract: An improved switching material for forming a composite article over a substrate is disclosed. A first volume of nanotubes is combined with a second volume of nanoscopic particles in a predefined ration relative to the first volume of nanotubes to form a mixture. This mixture can then be deposited over a substrate as a relatively thick composite article via a spin coating process. The composite article may possess improved switching properties over that of a nanotube-only switching article. A method for forming substantially uniform nanoscopic particles of carbon, which contains one or more allotropes of carbon, is also disclosed.Type: GrantFiled: September 1, 2017Date of Patent: January 15, 2019Assignee: Nantero, Inc.Inventors: Eliodor G. Ghenciu, Thomas Rueckes, Thierry Yao, J. Thomas Kocab
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Patent number: 10043899Abstract: A Laterally Diffused MOSFET (LDMOS) device architecture particularly suitable for use in tight pitch environments such as for line drivers in an integrated memory application. In one embodiment, an illustrative high-voltage MOSFET device includes: a body (a semiconductor of a first conductivity type), a source region (a semiconductor of a second conductivity type) at a source active area and positioned within or adjacent to the body, a drift region (a lightly-doped semiconductor of the second conductivity type) positioned adjacent to the body, and a gate overlying at least a portion of the body and at least a portion of the drift region to form a controllable channel between the source region and the drift region. To increase the drain breakdown voltage, a width dimension of the drift region is formed to be sufficiently small for a depletion zone to extend across a full width of the drift region.Type: GrantFiled: June 26, 2017Date of Patent: August 7, 2018Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventor: Thierry Yao
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Publication number: 20180013084Abstract: An improved switching material for forming a composite article over a substrate is disclosed. A first volume of nanotubes is combined with a second volume of nanoscopic particles in a predefined ration relative to the first volume of nanotubes to form a mixture. This mixture can then be deposited over a substrate as a relatively thick composite article via a spin coating process. The composite article may possess improved switching properties over that of a nanotube-only switching article. A method for forming substantially uniform nanoscopic particles of carbon, which contains one or more allotropes of carbon, is also disclosed.Type: ApplicationFiled: September 1, 2017Publication date: January 11, 2018Inventors: Eliodor G. Ghenciu, Thomas Rueckes, Thierry Yao, J. Thomas Kocab
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Patent number: 9755170Abstract: An improved switching material for forming a composite article over a substrate is disclosed. A first volume of nanotubes is combined with a second volume of nanoscopic particles in a predefined ration relative to the first volume of nanotubes to form a mixture. This mixture can then be deposited over a substrate as a relatively thick composite article via a spin coating process. The composite article may possess improved switching properties over that of a nanotube-only switching article. A method for forming substantially uniform nanoscopic particles of carbon, which contains one or more allotropes of carbon, is also disclosed.Type: GrantFiled: April 11, 2016Date of Patent: September 5, 2017Assignee: Nantero, Inc.Inventors: Eliodor G. Ghenciu, Thomas Rueckes, Thierry Yao, J. Thomas Kocab
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Publication number: 20160226008Abstract: An improved switching material for forming a composite article over a substrate is disclosed. A first volume of nanotubes is combined with a second volume of nanoscopic particles in a predefined ration relative to the first volume of nanotubes to form a mixture. This mixture can then be deposited over a substrate as a relatively thick composite article via a spin coating process. The composite article may possess improved switching properties over that of a nanotube-only switching article. A method for forming substantially uniform nanoscopic particles of carbon, which contains one or more allotropes of carbon, is also disclosed.Type: ApplicationFiled: April 11, 2016Publication date: August 4, 2016Inventors: Eliodor G. GHENCIU, Thomas RUECKES, Thierry YAO, J. Thomas KOCAB
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Patent number: 9337423Abstract: An improved switching material for forming a composite article over a substrate is disclosed. A first volume of nanotubes is combined with a second volume of nanoscopic particles in a predefined ration relative to the first volume of nanotubes to form a mixture. This mixture can then be deposited over a substrate as a relatively thick composite article via a spin coating process. The composite article may possess improved switching properties over that of a nanotube-only switching article. A method for forming substantially uniform nanoscopic particles of carbon, which contains one or more allotropes of carbon, is also disclosed.Type: GrantFiled: February 27, 2015Date of Patent: May 10, 2016Assignee: Nantero Inc.Inventors: Eliodor G. Ghenciu, Thomas Rueckes, Thierry Yao, J. Thomas Kocab
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Publication number: 20150188049Abstract: An improved switching material for forming a composite article over a substrate is disclosed. A first volume of nanotubes is combined with a second volume of nanoscopic particles in a predefined ration relative to the first volume of nanotubes to form a mixture. This mixture can then be deposited over a substrate as a relatively thick composite article via a spin coating process. The composite article may possess improved switching properties over that of a nanotube-only switching article. A method for forming substantially uniform nanoscopic particles of carbon, which contains one or more allotropes of carbon, is also disclosed.Type: ApplicationFiled: February 27, 2015Publication date: July 2, 2015Inventors: Eliodor G. Ghenciu, Thomas Rueckes, Thierry Yao, J. Thomas Kocab
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Patent number: 8969142Abstract: An improved switching material for forming a composite article over a substrate is disclosed. A first volume of nanotubes is combined with a second volume of nanoscopic particles in a predefined ration relative to the first volume of nanotubes to form a mixture. This mixture can then be deposited over a substrate as a relatively thick composite article via a spin coating process. The composite article may possess improved switching properties over that of a nanotube-only switching article. A method for forming substantially uniform nanoscopic particles of carbon, which contains one or more allotropes of carbon, is also disclosed.Type: GrantFiled: October 11, 2013Date of Patent: March 3, 2015Assignee: Nantero Inc.Inventors: Eliodor G. Ghenciu, Thomas Rueckes, Thierry Yao, J. Thomas Kocab
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Publication number: 20140045316Abstract: An improved switching material for forming a composite article over a substrate is disclosed. A first volume of nanotubes is combined with a second volume of nanoscopic particles in a predefined ration relative to the first volume of nanotubes to form a mixture. This mixture can then be deposited over a substrate as a relatively thick composite article via a spin coating process. The composite article may possess improved switching properties over that of a nanotube-only switching article. A method for forming substantially uniform nanoscopic particles of carbon, which contains one or more allotropes of carbon, is also disclosed.Type: ApplicationFiled: October 11, 2013Publication date: February 13, 2014Applicant: NANTERO INC.Inventors: Eliodor G. Ghenciu, Thomas Rueckes, Thierry Yao, J. Thomas Kocab
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Patent number: 8586424Abstract: An improved switching material for forming a composite article over a substrate is disclosed. A first volume of nanotubes is combined with a second volume of nanoscopic particles in a predefined ration relative to the first volume of nanotubes to form a mixture. This mixture can then be deposited over a substrate as a relatively thick composite article via a spin coating process. The composite article may possess improved switching properties over that of a nanotube-only switching article. A method for forming substantially uniform nanoscopic particles of carbon, which contains one or more allotropes of carbon, is also disclosed.Type: GrantFiled: March 29, 2011Date of Patent: November 19, 2013Assignee: Nantero Inc.Inventors: Eliodor G. Ghenciu, Thomas Rueckes, Thierry Yao, Thomas Kocab
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Publication number: 20110183489Abstract: An improved switching material for forming a composite article over a substrate is disclosed. A first volume of nanotubes is combined with a second volume of nanoscopic particles in a predefined ration relative to the first volume of nanotubes to form a mixture. This mixture can then be deposited over a substrate as a relatively thick composite article via a spin coating process. The composite article may possess improved switching properties over that of a nanotube-only switching article. A method for forming substantially uniform nanoscopic particles of carbon, which contains one or more allotropes of carbon, is also disclosed.Type: ApplicationFiled: March 29, 2011Publication date: July 28, 2011Inventors: Eliodor G. GHENCIU, Thomas RUECKES, Thierry YAO, Tom KOCAB
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Patent number: 7915637Abstract: An improved switching material for forming a composite article over a substrate is disclosed. A first volume of nanotubes is combined with a second volume of nanoscopic particles in a predefined ration relative to the first volume of nanotubes to form a mixture. This mixture can then be deposited over a substrate as a relatively thick composite article via a spin coating process. The composite article may possess improved switching properties over that of a nanotube-only switching article. A method for forming substantially uniform nanoscopic particles of carbon, which contains one or more allotropes of carbon, is also disclosed.Type: GrantFiled: November 19, 2008Date of Patent: March 29, 2011Assignee: Nantero, Inc.Inventors: Eliodor G. Ghenciu, Thomas Rueckes, Thierry Yao, Tom Kocab
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Publication number: 20100123116Abstract: An improved switching material for forming a composite article over a substrate is disclosed. A first volume of nanotubes is combined with a second volume of nanoscopic particles in a predefined ration relative to the first volume of nanotubes to form a mixture. This mixture can then be deposited over a substrate as a relatively thick composite article via a spin coating process. The composite article may possess improved switching properties over that of a nanotube-only switching article. A method for forming substantially uniform nanoscopic particles of carbon, which contains one or more allotropes of carbon, is also disclosed.Type: ApplicationFiled: November 19, 2008Publication date: May 20, 2010Inventors: Eliodor G. GHENCIU, Thomas RUECKES, Thierry YAO, Tom KOCAB