Patents by Inventor Thiet The Lai
Thiet The Lai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8143120Abstract: A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors.Type: GrantFiled: February 14, 2011Date of Patent: March 27, 2012Assignee: Agere Systems Inc.Inventors: Daniel Charles Kerr, Michael Scott Carroll, Amal Ma Hamad, Thiet The Lai, Roger W. Key
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Publication number: 20110133289Abstract: A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors.Type: ApplicationFiled: February 14, 2011Publication date: June 9, 2011Inventors: Daniel Charles Kerr, Michael Scott Carroll, Amal Ma Hamad, Thiet The Lai, Roger W. Key
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Patent number: 7910425Abstract: A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors.Type: GrantFiled: March 19, 2010Date of Patent: March 22, 2011Assignee: Agere Systems Inc.Inventors: Daniel Charles Kerr, Michael Scott Carroll, Amal Ma Hamad, Thiet The Lai, Roger W. Key
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Publication number: 20100173459Abstract: A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors.Type: ApplicationFiled: March 19, 2010Publication date: July 8, 2010Inventors: Daniel Charles Kerr, Michael Scott Carroll, Amal Ma Hamad, Thiet The Lai, Roger W. Key
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Patent number: 7713811Abstract: A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors.Type: GrantFiled: October 1, 2008Date of Patent: May 11, 2010Assignee: Agere Systems Inc.Inventors: Daniel Charles Kerr, Michael Scott Carroll, Amal Ma Hamad, Thiet The Lai, Roger W. Key
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Publication number: 20090029510Abstract: A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors.Type: ApplicationFiled: October 1, 2008Publication date: January 29, 2009Inventors: Daniel Charles Kerr, Michael Scott Carroll, Amal Ma Hamad, Thiet The Lai, Roger W. Key
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Patent number: 7449388Abstract: A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors.Type: GrantFiled: July 18, 2006Date of Patent: November 11, 2008Assignee: Agere Systems Inc.Inventors: Daniel Charles Kerr, Michael Scott Carroll, Amal Ma Hamad, Thiet The Lai, Roger W. Key
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Publication number: 20060252215Abstract: A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors.Type: ApplicationFiled: July 18, 2006Publication date: November 9, 2006Inventors: Daniel Kerr, Michael Carroll, Amal Hamad, Thiet Lai, Roger Key
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Patent number: 7095094Abstract: A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors.Type: GrantFiled: September 29, 2004Date of Patent: August 22, 2006Assignee: Agere Systems Inc.Inventors: Daniel Charles Kerr, Michael Scott Carroll, Amal Ma Hamad, Thiet The Lai, Roger W. Key
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Publication number: 20060065936Abstract: A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors.Type: ApplicationFiled: September 29, 2004Publication date: March 30, 2006Inventors: Daniel Kerr, Michael Carroll, Amal Hamad, Thiet Lai, Roger Key