Abstract: An optical gate device may have one or more optical cavities. The optical cavity may have an embedded optically-active material providing strong light-matter coupling. A pump input allows application to of a pulsed optical pump beam the optically-active material. The pump beam is absorbed by the optically active material to form an exciton-polariton condensate which emits light. The optical gate device may have an input waveguide to input a seed signal to the optical cavity. The optical gate device may include an output waveguide to output of an optical signal at a wavelength corresponding to a resonant mode of a the cavity. The device may operate in a manner such that, when the pump beam is applied to the pump input, an optical output signal is selectively provided in the output waveguide, via the input of the a seed signal and light emitted by the exciton-polariton condensate.

Abstract: A device having a layered structure that includes a layer of phase change material and a matrix material layer having embedding quantum emitters is tuned. An electric field is applied through the matrix material layer and the layer of phase change material to change the emission wavelengths of the quantum emitters. A phase of the phase change material is changed, in a non-volatile manner, in each of one or more of local areas of the phase change material, to form local alterations that are opposite to respective ones of the quantum emitters in the matrix material layer, to locally modify the electric field at the respective quantum emitters.

Abstract: A device having a layered structure that includes a layer of phase change material and a matrix material layer having embedding quantum emitters is tuned. An electric field is applied through the matrix material layer and the layer of phase change material to change the emission wavelengths of the quantum emitters. A phase of the phase change material is changed, in a non-volatile manner, in each of one or more of local areas of the phase change material, to form local alterations that are opposite to respective ones of the quantum emitters in the matrix material layer, to locally modify the electric field at the respective quantum emitters.

Abstract: A method of an embodiment includes forming a capacitor pad for a nonlinear resonator. In an embodiment, the method includes comparing a resonance frequency of the nonlinear resonator to a target frequency to determine whether the resonance frequency falls within a range of the target frequency. A device of an embodiment includes a first capacitor pad comprising a superconducting material, the first capacitor pad configured to couple to a first end of a logic circuit element. In an embodiment, the device includes a second capacitor pad comprising a second superconducting material, the capacitor pad configured to couple to a second end of the logic circuit element. In an embodiment, the second capacitor pad includes a first portion; a second portion; and a bridge configured to electrically connect the first portion and the second portion.

Abstract: A device package includes a chip carrier having a cavity and one or more microwave waveguides configured to route signals. There is a chip including one or more pads and located within the cavity of the chip carrier. Each pad is aligned with a corresponding connector pad of a microwave waveguide of the one or more microwave waveguides of the chip carrier. At least one of the one or more pads is coupled to the connector pad of the corresponding microwave waveguide by way of an overlap capacitive coupling between the at least one pad and the aligned corresponding connector pad of the microwave waveguide.

Abstract: A method of an embodiment includes forming a capacitor pad for a nonlinear resonator. In an embodiment, the method includes comparing a resonance frequency of the nonlinear resonator to a target frequency to determine whether the resonance frequency falls within a range of the target frequency. A device of an embodiment includes a first capacitor pad comprising a superconducting material, the first capacitor pad configured to couple to a first end of a logic circuit element. In an embodiment, the device includes a second capacitor pad comprising a second superconducting material, the capacitor pad configured to couple to a second end of the logic circuit element. In an embodiment, the second capacitor pad includes a first portion; a second portion; and a bridge configured to electrically connect the first portion and the second portion.

Abstract: A detection device can include a cavity structure forming a Fabry-Perot optical microcavity, an electrostatic trap, and a Brownian motor. The Fabry-Perot optical microcavity has two mirrors extending on each side of a reference plane in a spacer region between the two mirrors. The mirrors are configured to vertically confine radiation in the spacer region, e.g., with respect to a first direction perpendicular to the reference plane. The electrostatic trap is arranged in the spacer region. The trap includes a pit and the cavity structure is generally configured to confine radiation in the pit, laterally (e.g., with respect to a second direction parallel to the reference plane). The Brownian motor structure extends in the spacer region along said reference plane. This structure is adapted to laterally load particles in the pit of the electrostatic trap by moving such particles along the structure, in operation.

Abstract: An electro-optical memory cell having a non-volatile programmable refractive index and a method of making. The memory cell includes: a waveguiding structure having a transition metal oxide with oxygen vacancies; a plurality of electrodes for applying an electrical field; and an optical detector for detecting a state of the memory cell. The method includes: fabricating a waveguiding structure having a transition metal oxide with oxygen vacancies; positioning a plurality of electrodes for application of an electric field; arranging the transition metal oxide and the electrodes such that when an electric field is applied, the oxygen vacancies migrate in a direction that has a component which is radial relative to a center of the beam path; applying the electric field thereby programming the refractive index to set a state of the memory cell; and detecting the state of the memory cell using an optical detector.

Abstract: A surface-emitting photonic device including a structure disposed therein to enhance a performance thereof. The structure includes a two dimensionally periodic second order distributed feedback device (DFB) to emit diffraction limited outcoupled laser light having a predetermined wavelength along a propagation direction that is substantially normal to a plane of the DFB, and a first order distributed Bragg reflector (DBR) coplanar with, adjacent to and surrounding the DFB, a geometry of the DBR being selected such that a bandgap of the DBR is maximized and centered around the predetermined wavelength of the emitted light, a substrate, and either an optical gain layer, or a semi-conductor quantum well laser disposed within the substrate.

Abstract: An electro-optical memory cell having a non-volatile programmable refractive index and a method of making. The memory cell includes: a waveguiding structure having a transition metal oxide with oxygen vacancies; a plurality of electrodes for applying an electrical field; and an optical detector for detecting a state of the memory cell. The method includes: fabricating a waveguiding structure having a transition metal oxide with oxygen vacancies; positioning a plurality of electrodes for application of an electric field; arranging the transition metal oxide and the electrodes such that when an electric field is applied, the oxygen vacancies migrate in a direction that has a component which is radial relative to a center of the beam path; applying the electric field thereby programming the refractive index to set a state of the memory cell; and detecting the state of the memory cell using an optical detector.