Abstract: Disclosed is a method for depositing microcrystalline silicon on a substrate in a plasma chamber system, comprising the following steps: prior to initiating the plasma, providing the plasma chamber system with at least one reactive, silicon-containing gas and hydrogen, or exclusively hydrogen; initiating the plasma; after the plasma is initiated, continuously supplying the chamber system exclusively with reactive, silicon-containing gas, or after the plasma is initiated, continuously supplying the chamber system with at least one mixture comprising a reactive, silicon-containing gas and hydrogen, wherein the concentration of reactive, silicon-containing gas during the supply into the chamber is adjusted to greater than 0.5%; adjusting the plasma power to between 0.1 and 2.5 W/cm2 electrode surface; selecting a deposition rate of greater than 0.5 nm/s; and depositing, the microcrystalline layer having a thickness of less than 1000 nanometers on the substrate.