Abstract: Various embodiments may relate to an optoelectronic component, including a first organic functional layer structure, a second organic functional layer structure and a charge generating layer structure between the first organic functional layer structure and the second organic functional layer structure. The charge generating layer structure includes a hole-conducting charge generating layer and a first electron-conducting charge generating layer. The hole-conducting charge generating layer includes or is formed from an inorganic substance or an inorganic substance mixture. The first electron-conducting charge generating layer includes or is formed from an organic substance or an organic substance mixture. The first electron-conducting charge generating layer includes or is formed from an organic, intrinsically electron-conducting substance.

Abstract: An electronic component (100), which comprises a substrate (1), at least one first electrode (3) arranged on the substrate (3) and a growth layer (7) on the side of the electrode (3) remote from the substrate (7), wherein the electrode (7) arranged on the growth layer (3) comprises a metal layer (9) with a thickness of less than or equal to 30 nm and the growth layer (7) has a thickness which is less than or equal to 10 nm. An electrical contact is also disclosed.

Abstract: According to at least one embodiment, an organic light-emitting component includes a substrate, a first electrode arranged on the substrate, and a second electrode. An organic light-generating layer stack is arranged between the first and second electrodes and includes a first organic OLED functional material. A first organic coupling-out layer is in optical contact with the organic light-generating layer stack and includes an organic material containing a second organic OLED functional material. One of the first and second electrodes is translucent, and the first organic coupling-out layer is arranged on that side of the electrode that faces away from the organic light-generating layer stack.

Abstract: Various embodiments may relate to an organic optoelectronic component with a layer structure for generating and separating charge carriers of a first charge carrier type and charge carriers of a second charge carrier type, the layer structure including a hole-conducting transparent inorganic semiconductor.

Abstract: An organic light-emitting component includes a translucent substrate, on which an optical coupling-out layer is applied. A translucent electrode overlies the coupling-out layer and an organic functional layer stack having organic functional layers overlies the translucent electrode. The organic functional layer stack includes a first organic light-emitting layer on the translucent electrode and a second organic light-emitting layer on the first organic light-emitting layer. The first organic light-emitting layer includes arbitrarily arranged emitter molecules and the second organic light-emitting layer includes anisotropically oriented emitter molecules having an anisotropic molecular structure.

Abstract: An organic light-emitting component includes a substrate, on which are applied an optical coupling-out layer, a translucent electrode on the coupling-out layer, an organic hole-conducting layer or an organic electron-conducting layer on the translucent electrode, an organic light-emitting layer thereon, an organic electron-conducting layer or an organic hole-conducting layer on the organic light-emitting layer, and a reflective electrode. The organic light-emitting layer is at a distance of greater than or equal to 150 nm from the reflective electrode.

Abstract: The invention relates to an organic light-emitting part having a functional layer stack (10), which functional layer stack has a substrate (1), a first electrode (2) above the substrate, an organic functional layer stack (4) above the first electrode, having an organic light-emitting layer (5), and a second electrode (3) above the organic functional layer stack, wherein a layer (1, 2, 3) of the functional layer stack (10) forms a carrier layer (6) for a diffusion layer (7), wherein the diffusion layer (7) has at least one first and one second organic component (71, 72) having indices of refraction that differ from each other, wherein the first organic component (71) is hydrophobic and the second organic component (72) is hydrophilic, wherein the glass transition temperature of a mixture of the first organic component (71) and the second organic component (72); lies above the room temperature and wherein the first organic component (71) and the second organic component (72) are partially segregated in the diff

Abstract: An organic light-emitting component is specified, comprising a translucent substrate (1), on which a translucent electrode (3) is arranged, comprising on the translucent electrode (3) an organic functional layer stack comprising organic functional layers having at least one organic light-emitting layer (5) and comprising a further electrode (7), wherein the at least one organic light-emitting layer (5) comprises emitter molecules having an anisotropic molecular structure which are oriented anisotropically, and wherein all the organic light-emitting layers (5, 51, 52, 53) of the organic light-emitting component are at a distance of greater than or equal to 20 nm and less than or equal to 100 nm from the further electrode (7).

Abstract: The invention relates to a radiation-emitting, organic component comprising a radiation-permeable carrier body (1) having a first surface (1a) on a top side of the carrier body (1), a radiation-permeable, structured layer (2) that is arranged on the first surface (1a) and covers same at least in places, a radiation-permeable first electrode (3) that is arranged on the side of the structured layer (2) facing away from the carrier body (1), a layer stack (10) that is arranged on the side of the first electrode (3) facing away from the structured layer (2) and comprises an organic, active region, and a second electrode (6), wherein the active region (10a) can be electrically contacted via the first electrode (3) and the second electrode (6), the structured layer (2) is different from the radiation-permeable carrier body (1), and the structured layer (2) comprises structures (2a) for refracting and/or scattering electromagnetic radiation generated in the active region (100) during operation.

Abstract: Various embodiments relate to a method for producing an optoelectronic component includes applying a planarization medium to a surface of a substrate, wherein the planarization medium comprises a material which absorbs electromagnetic radiation having wavelengths of a maximum of 600 nm, applying a first electrode on or above the material, forming an organic functional layer structure on or above the first electrode, and forming a second electrode on or above the organic functional layer structure.

Abstract: A light-emitting component may include: a first electrode; an organic electroluminescent layer structure on or above the first electrode; a second translucent electrode on or above the organic electroluminescent layer structure; an optically translucent layer structure on or above the second electrode, wherein the optically translucent layer structure includes photoluminescence material; and a mirror layer structure on or above the optically translucent layer structure.

Abstract: An organic light-emitting device includes a substrate, on which a transparent electrode and a further electrode are applied. An organic light-emitting layer is arranged between the electrodes. At least one optical scattering layer is arranged on a side of the transparent electrode facing away from the organic light-emitting layer.

Abstract: An organic light-emitting component, may include: a first electrode; an organic light-generating layer structure on or above the first electrode; a second translucent electrode on or above the organic light-generating layer structure; an optically translucent layer structure on or above the second electrode; and a mirror layer structure on or above the optically translucent layer structure, wherein the mirror layer structure has a light-scattering structure on that side of the mirror layer structure which lies toward the optically translucent layer structure.

Abstract: An encapsulation structure for an optoelectronic component may include: a barrier thin-film layer for protecting an optoelectronic component against chemical impurities; a cover layer applied above the barrier thin-film layer and serving for protecting the barrier thin-film layer against mechanical damage; and an intermediate layer applied on the barrier thin-film layer between barrier thin-film layer and cover layer and including a curable material designed such that when the non-cured intermediate layer is applied to the barrier thin-film layer, particle impurities at the surface of the barrier thin-film layer are enclosed by the intermediate layer and the applied intermediate layer has a substantially planar surface, and that after the intermediate layer has been cured, mechanical loads on the barrier thin-film layer as a result of particle impurities during the application of the cover layer are reduced by the intermediate layer.

Abstract: A light-emitting component may include: a first electrode; an organic electroluminescent layer structure on or over the first electrode; a second translucent electrode on or over the organic electroluminescent layer structure; and a mirror layer structure on or over the second electrode, wherein the mirror layer structure has a lateral thermal conductance of at least 1*10?3 W/K.

Abstract: A method for producing an electronic component may include: applying an electrode growth layer on or above a layer structure by means of an atomic layer deposition method; and applying an electrode on the electrode growth layer, wherein the electrode growth layer is applied with a layer thickness in a range of approximately 1.5 nm to approximately 28 nm.

Abstract: An electronic component (100), which comprises a substrate (1), at least one first electrode (3) arranged on the substrate (3) and a growth layer (7) on the side of the electrode (3) remote from the substrate (7), wherein the electrode (7) arranged on the growth layer (3) comprises a metal layer (9) with a thickness of less than or equal to 30 nm and the growth layer (7) has a thickness which is less than or equal to 10 nm. An electrical contact is also disclosed.

Abstract: A thin-layer encapsulation (1) for an optoelectronic component. The thin-layer encapsulation (1) comprises a sequence of layers (2) that comprises the following layers: a first ALD layer (3) deposited by means of atomic layer deposition, and a second ALD layer (4) deposited by means of atomic layer deposition. A method is disclosed for producing the thin-layer encapsulation and an optoelectronic component is disclosed having such a thin-layer encapsulation.