Abstract: A resist is formed by sorption of an inorganic-containing gas into an organic material. The development of the resist occurs by exposure to a plasma (e.g., oxygen reactive ion etching) that forms a protective compound (e.g., a metal oxide) selectively in the resist. The selected regions can be defined by patterning radiation of various types, including visible, ultraviolet, electron beam, and ion beam. In an alternate embodiment, the selected regions are defined by an overlying resist, with the gas sorption protecting the underlying layer in a bilevel resist. The protective compound can protect the organic resist layer during etching of an underlying inorganic layer, such as metal, silicide, oxide, nitride, etc.

Abstract: An optically integrated bistable device includes a semiconductor junction Fabry-Perot interferometer cavity and a pair of electrodes for applying a reverse-bias voltage to the junction to increase its light absorption. A capacitor is connected between one electrode and ground for eliminating spurious high-speed signals. A resistor is connected in series with the voltage source between the electrodes to decrease the back-bias in response to photocurrent for a negative feedback.

Abstract: The conductivity of a wide range of carbon-containing materials is substantially increased by irradiation with particles having an atomic mass of at least 1. Both polymeric and nonpolymeric, organic and inorganic, materials can be used. The particulate irradiation, for example an ion beam, substantially breaks down the material to a form that includes amorphous carbon having unusually high conductivity. Resistivities of less than 10.sup.-3 ohm-cm are possible. When applied as a film on a substrate, the irradiated material can be used for device interconnects. Conducting lines can be produced in the film, as well as vertical contacts through the film.

Abstract: A method is shown whereby implanted ions, for example indium or gallium ions, are used to selectively define a pattern on a material, typically a polymer. The implanted regions react with a plasma (for example, an oxygen plasma) to form a patterned, nonvolatile protective layer (e.g., indium oxide or gallium oxide) on the material. Subsequent etching, which can typically be accomplished by the same plasma, produces a negative tone pattern. Materials other than polymers can be utilized. For example, an indium implant in SiO.sub.2 allows direct pattern generation by exposure to a fluorine plasma, without the use of a separate polymeric resist.

Abstract: Multimode switching is obtained in a four-port device having controllable switching means (22) comprising a thin Fabry-Perot interferometer including, within the cavity, a voltage controllable absorber (35). By the appropriate dimensioning of the cavity and orientation of the incident radiation, multimode operation is obtained.

Abstract: A new mode of optical annealing is disclosed wherein two different wavelength pulses are used to anneal a damaged semiconductor substrate. The first pulse may be of relatively weak intensity, but is strongly absorbed by the solid substrate. The second pulse, which is not strongly absorbed by the solid substrate when in the solid phase, is strongly absorbed by the substrate when in the molten phase. Exposure to the first pulse results in the melting of the substrate, which then becomes highly absorptive to light at the wavelength of the second pulse. Readily available laser sources which are generally not highly absorbed by the semiconductor in the solid phase may thus be efficiently utilized.

Abstract: Polycrystalline and amorphous semiconductors can be annealed using a laser or electron beam to restore or obtain crystal order by epitaxial regrowth on a crystal substrate. When the annealing occurs by liquid phase epitaxy, the presence and lifetime of a molten state at the region being annealed can be used to control the annealing process. Various control mechanisms are described.

Abstract: Damaged semiconductor materials are annealed using localized short term energy deposition. In a specific embodiment gallium arsenide damaged during ion implantation is annealed by exposure to short laser pulses.