Abstract: A bipolar junction transistor (BJT) may be used in a power stage DC-to-DC converter, such as a converter in LED-based light bulbs. The power stage may be operated by a controller to maintain a desired current output to the LED load. The controller may operate the power stage by monitoring a start and end of a reverse recovery time of the BJT. Information regarding the start and end of the reverse recovery time may be used in the control of the power stage to improve efficiency of the power stage.

Abstract: A turn-off transition time period, also referred to as a reverse recovery time period, may be compensated for by a controller of a power stage including a bipolar junction transistor (BJT). The reverse recovery time period may be measured in one switching cycle and a subsequent switching cycle may include compensations based on the measured reverse recovery time period. That is the switching on and off of the BJT may be compensated to obtain a desired average output current to a load. When the reverse recovery time period is known, an error in the peak current obtained due to the reverse recovery time period may be calculated. The calculated error may be used to offset the target peak current for controlling the switching of the BJT to begin a turn-off transition of the BJT earlier in a switching cycle and thus reduce error in peak current at the BJT.

Abstract: A bipolar junction transistor (BJT) may be used in a power stage DC-to-DC converter, such as for LED-based light bulbs. The BJT may be switched on and off from a controller coupled to two terminals of the BJT. Through the two terminals, the control IC may dynamically adjust a reverse recovery time period of the BJT. The reverse recovery time period may be adjusted by changing an amount of base charge that accumulates on the BJT. Additional, the reverse recovery may be controlled through the use of a reverse base current source applied to the BJT after beginning switching off the BJT.

Abstract: A bipolar junction transistor (BJT) may be used in a power stage DC-to-DC converter, such as a converter in LED-based light bulbs. The power stage may be operated by a controller to maintain a desired current output to the LED load. The controller may operate the power stage by monitoring a start and end of a reverse recovery time of the BJT. Information regarding the start and end of the reverse recovery time may be used in the control of the power stage to improve efficiency of the power stage.

Abstract: In one embodiment a heating mechanism is provided with an integrated circuit for testing and calibration purposes. During production testing, heating elements may be activated in order to quickly bring an integrated circuit up to operating temperature for temperature testing or calibration. Once the operating test temperature has been reached, the circuit can be quickly and easily tested to show it is operable within the design temperature range and/or to obtain calibration data to correct for temperature drift. Calibration data may be used to create correction data, which may be stored within the integrated circuit. During normal operation, the correction data may be used to compensate for variations in operation due to temperature.

Abstract: A turn-off transition time period, also referred to as a reverse recovery time period, may be compensated for by a controller of a power stage including a bipolar junction transistor (BJT). The reverse recovery time period may be measured in one switching cycle and a subsequent switching cycle may include compensations based on the measured reverse recovery time period. That is the switching on and off of the BJT may be compensated to obtain a desired average output current to a load. When the reverse recovery time period is known, an error in the peak current obtained due to the reverse recovery time period may be calculated. The calculated error may be used to offset the target peak current for controlling the switching of the BJT to begin a turn-off transition of the BJT earlier in a switching cycle and thus reduce error in peak current at the BJT.

Abstract: A bipolar junction transistor (BJT) may be used in a power stage DC-to-DC converter, such as for LED-based light bulbs. The BJT may be switched on and off from a controller coupled to two terminals of the BJT. Through the two terminals, the control IC may dynamically adjust a reverse recovery time period of the BJT. The reverse recovery time period may be adjusted by changing an amount of base charge that accumulates on the BJT. Additional, the reverse recovery may be controlled through the use of a reverse base current source applied to the BJT after beginning switching off the BJT.

Abstract: A temperature and process-stable magnetic field sensor bias current source provides improved performance in Hall effect sensor circuits. A switched-capacitor sensing element is used to sense either a reference current or the bias current directly. A current mirror may be used to generate the bias current from the reference current, and may include multiple current source transistors coupled through corresponding control transistors that are switched using a barrel shifter to reduce variations in the bias current due to process variation. The current mirror control may be provided via a chopper amplifier to reduce flicker noise and the current mirror control voltage may be held using a track/hold circuit during transitions of the chopper amplifier to further reduce noise due to the chopping action.

Abstract: A magnetic field sensor circuit with common-mode voltage nulling, reduces or eliminates the effect of common-mode variation and transients due to rotation of the magnetic field sensor terminals between the bias current source and sensor output voltage terminals. A switching circuit rotates the bias current source and sensor output voltage terminals between pairs of terminals of the semiconductor magnetic field sensor. After each rotation, the switching circuit momentarily shorts all of the terminals of the semiconductor magnetic field sensor to a reference voltage such as ground. After a predetermined period of time, a sample/hold circuit having an input coupled to the sensor output terminals samples and holds the voltage at the sensor output voltage terminals, resulting in a sampled output free of common mode error between samples due to common-mode error and magnitude changes between magnetic field sensor terminal pairs.

Abstract: A temperature and process-stable magnetic field sensor bias current source provides improved performance in Hall effect sensor circuits. A switched-capacitor sensing element is used to sense either a reference current or the bias current directly. A current mirror may be used to generate the bias current from the reference current, and may include multiple current source transistors coupled through corresponding control transistors that are switched using a barrel shifter to reduce variations in the bias current due to process variation. The current mirror control may be provided via a chopper amplifier to reduce flicker noise and the current mirror control voltage may be held using a track/hold circuit during transitions of the chopper amplifier to further reduce noise due to the chopping action.

Abstract: A magnetic field sensor circuit with common-mode voltage nulling, reduces or eliminates the effect of common-mode variation and transients due to rotation of the magnetic field sensor terminals between the bias current source and sensor output voltage terminals. A switching circuit rotates the bias current source and sensor output voltage terminals between pairs of terminals of the semiconductor magnetic field sensor. After each rotation, the switching circuit momentarily shorts all of the terminals of the semiconductor magnetic field sensor to a reference voltage such as ground. After a predetermined period of time, a sample/hold circuit having an input coupled to the sensor output terminals samples and holds the voltage at the sensor output voltage terminals, resulting in a sampled output free of common mode error between samples due to common-mode error and magnitude changes between magnetic field sensor terminal pairs.