Abstract: Disclosed is a breath sampling device comprising a buffer tube, sensor module and breath sampling port. The buffer tube has a proximal end into which a user exhales and a distal end opposite the proximal end, the sensor module is at the distal end and used for measuring parameters of a breath exhaled by the user into the buffer tube, and the breath sampling port is disposed between the proximal end and distal end. The used exhales into the distal end and a portion of the exhaled breath can be diverted into the sampling port substantially without contacting the sensor module.

Abstract: The invention relates to a method of detecting the presence of cancer in a subject based on a panel of biomarkers comprising Hexanal, Heptanal, Octanal, Decanal, Benzaldehyde, Phenylacetaldehyde, Undecane and Benzoic acid in exhaled breath obtained from a subject. The disclosure also teaches a method of detecting tuberculosis and to distinguish the detection of tuberculosis from cancer or to distinguish the detection of cancer from tuberculosis.

Abstract: A scanning microscope for high resolution current imaging by direct magnetic field sensing of a sample maintained in an ambient environment. The scanning microscope uses a magnetic sensor such as a SQUID and a fiber probe magnetically coupled between the SQUID sensor and the sample under study. The fiber probe has a sharply defined tip for high resolution probing and for reaching minute cavities on the surface of the sample. The coupling between the tip of the fiber probe and the sample is controlled by a distance control mechanism, in the range of 1-100 nm. The material of the fiber probe with high permeability and low magnetic noise is chosen to optimize flux transmission to the magnetic sensor. Magnetic coupling to the sensor is maximized by keeping the distance between the end of the fiber probe and the sensor to approximately 0-100 ?m. The fiber probe is integrated into the fiber holder for easy replacement of the fiber probe.

Abstract: Photoconductive devices (1,2) comprising MgxZn1?xO, that is preferably epitaxially deposited on a substrate (21), optionally also including a buffer layer (22), wherein x has a value such that the layer is sensitive to UV light. The a MgZnO device (2) having predetermined electrical and optical properties and first and second electrodes (3) deposited on a surface of the device, the second electrode being spaced from the first electrode. A voltage source (4) is connected across the first and second electrodes to create an electric field within the device. In operation, when the surface of the device upon which the electrodes are deposited is subjected to a photon emission, electron-hole pairs are created within the device and flow within the device because of the electric field.

Abstract: A system and method are provided to fabricate thin-films having different physical property parameters or having physical property parameters that continuously change across functionally broadband monolithic device arrays. The fabrication method deposits the thin-film including layers on a substrate of a monolithic chip. The method defines a desired gradient profile of each layer forming the thin-film, each gradient profile including a desired thinnest profile and a desired thickest profile. The method further aligns an aperture of a mask over the substrate to form the thin-film and calculates a shutter speed for the specified gradient profile of each layer across the desired area of the substrate, and deposits each layer on the substrate, through the aperture, as the aperture of the shutter moves at the calculated shutter speed from the desired thinnest profile of each layer to the desired thickest profile of each layer.

Abstract: Circuit flaws in microelectronic circuitry present regions of high resistance in which a current distribution deviates from that of a defect-free circuit. The altered current distribution emits a correspondingly altered magnetic field in accordance with Ampere's Law. When compared with the magnetic field of a defect-free circuit, the anomaly in the magnetic field of the defective device is detected and the location of the circuit flaw may be determined therefrom. As the anomaly in the magnetic field is very small in magnitude, a sensitive magnetic microscope is utilized to obtain images of the magnetic fields of a defect-free reference device and a device-under-test. The distance between the magnetic sensor and the devices being scanned is precisely controlled to minimize influences of scanning distance on the difference in measured magnetic field strength. Comparative image analysis reveals the location of the circuit flaw.

Abstract: Circuit flaws in microelectronic circuitry present regions of high resistance in which a current distribution deviates from that of a defect-free circuit. The altered current distribution emits a correspondingly altered magnetic field in accordance with Ampere's Law. When compared with the magnetic field of a defect-free circuit, the anomaly in the magnetic field of the defective device is detected and the location of the circuit flaw may be determined therefrom. As the anomaly in the magnetic field is very small in magnitude, a sensitive magnetic microscope is utilized to obtain images of the magnetic fields of a defect-free reference device and a device-under-test. The distance between the magnetic sensor and the devices being scanned is precisely controlled to minimize influences of scanning distance on the difference in measured magnetic field strength. Comparative image analysis reveals the location of the circuit flaw.

Abstract: A scanning microscope for high resolution current imaging by direct magnetic field sensing of a sample maintained in an ambient environment. The scanning microscope uses a magnetic sensor such as a SQUID and a fiber probe magnetically coupled between the SQUID sensor and the sample under study. The fiber probe has a sharply defined tip for high resolution probing and for reaching minute cavities on the surface of the sample. The coupling between the tip of the fiber probe and the sample is controlled by a distance control mechanism, in the range of 1-100 nm. The material of the fiber probe with high permeability and low magnetic noise is chosen to optimize flux transmission to the magnetic sensor. Magnetic coupling to the sensor is maximized by keeping the distance between the end of the fiber probe and the sensor to approximately 0-100 ?m. The fiber probe is integrated into the fiber holder for easy replacement of the fiber probe.

Abstract: YBCO step-edge junctions and SQUID on sapphire substrates using CeO2 as a buffer layer are fabricated. A steep step-edge is formed in the CeO2 buffer layer by the Ar+ ion milling of the buffer layer over a shadow mask having an overhang end structure which allows for an extended time of milling for forming a deep steep step-edge within the buffer layer. The step angle is greater than 81° as measured by AFM. A high quality YBCO film is then epitaxially grown by pulse laser deposition. After patterning, the junctions display RSJ-type I-V characteristics. The sapphire based YBCO step-edge SQUIDs are installed onto a SQUID microscope system. SQUIDs fabricated by the step-edge technique exhibit excellent magnetic field modulation, high imaging qualities, and low noise.

Abstract: Photoconductive devices (1,2) comprising MgxZn1-xO, that is preferably epitaxially deposited on a substrate (21), optionally also including a buffer layer (22), wherein x has a value such that the layer is sensitive to UV light. The a MgZnO device (2) having predetermined electrical and optical properties and first and second electrodes (3) deposited on a surface of the device, the second electrode being spaced from the first electrode. A voltage source (4) is connected across the first and second electrodes to create an electric field within the device. In operation, when the surface of the device upon which the electrodes are deposited is subjected to a photon emission, electron-hole pairs are created within the device and flow within the device because of the electric field.

Abstract: A superconducting garnet thin film system (10) is provided for high frequency microwave applications where a single crystal high temperature superconducting (HTSC) layer (18) is integrated with a garnet substrate (12). A first perovskite compound buffer layer (14) is epitaxially grown on an upper surface of the garnet substrate layer (12) and defines a lattice constant less than the lattice constant of the garnet substrate layer (12) with the first perovskite layer being aligned in a cube on cube parallel orientation with respect to the garnet substrate layer (12). A second perovskite layer (16) is epitaxially grown on an upper surface of the first perovskite layer (14) at an orientation of 45.degree. to first layer (14) and defines a lattice constant less than the lattice constant of the first perovskite layer.

Abstract: A superconducting thin film system (10) is provided for high frequency microwave applications where a single crystal high temperature superconducting layer (18) is integrated with a garnet substrate (12). A first perovskite compound buffer layer (14) is epitaxially grown on an upper surface of the garnet substrate layer (12) and defines a lattice constant less than the lattice constant of the garnet substrate layer (12). A second perovskite layer (16) is epitaxially grown on an upper surface of the first perovskite layer (14) and defines a lattice constant less than the lattice constant of the first perovskite layer. A high temperature superconducting layer (18) is epitaxially grown on an upper surface of the second perovskite layer (16) and is lattice matched to the second perovskite compound layer (16) for incorporation of passive components within the high temperature superconducting layer (18) having high frequency microwave applications.

Abstract: A superconductor/insulator metal oxide hetero structure for electric field tunable microwave device, including a dielectric substrate, a first superconducting electrode of an oxide superconductor provided on said dielectric substrate, an insulating layer formed on the first superconducting electrode and a second electrode arranged on the insulating layer in which the conductivity of the first superconducting electrode and/or the dielectric property of the insulating layer can be changed by a dc bias voltage applied between the first and the second electrodes so that surface resistance and/or surface reactance can be changed.

Abstract: A high frequency superconducting device structure is disclosed which comprises an alkaline earth fluoride substrate with a magnesium oxide lower buffer layer on the alkaline earth substrate and an upper buffer layer epitaxial template layer on the magnesium oxide layer for providing a template for epitaxial growth of a high temperature superconducting film on the upper buffer layer, providing reduced dielectric and conducting losses at high frequencies. The disclosed structure may be incorporated into a multi-chip module (MCM) for providing very high speed interconnections.

Abstract: This invention directs itself to a pulsed laser passive filter deposition system (10) which provides a blocking and transparent mask mechanism (34) placed between a target (14) and a substrate (12) to be coated. The blocking and transparent mask mechanism (34) includes a blocking member (36) which casts a blocking shadow having a greater cross-sectional area than the substrate (12), to block linearly travelling clustered species particulates (22) from impinging on the substrate (12). The blocking and transparent mask mechanism (34) also includes annularly shaped disk members (38 and 44) having openings (40 and 46) formed in a central portion to allow passage of the atomic species (20) of the composition being coated on the substrate (12) where the atomic species (20) is deflected by impingement with background gas molecules (26). In this manner, the substrate (12) is coated with the atomic species (20) in a uniform coating without having the clustered species (22) being coated on the substrate (12).

Abstract: A high frequency superconducting device structure is disclosed which comprises an alkaline earth fluoride substrate with a magnesium oxide lower buffer layer on the alkaline earth substrate and an upper buffer layer epitaxial template layer on the magnesium oxide layer for providing a template for epitaxial growth of a high temperature superconducting film on the upper buffer layer, providing reduced dielectric and conducting losses at high frequencies. The disclosed structure may be incorporated into a multi-chip module (MCM) for providing very high speed interconnections.

Abstract: A superconducting field effect device includes a substrate with an epitaxial superconducting film upon it and an insulating layer above a thinner region of the film which protects the film from the atmosphere and isolates it from a gate electrode which is on the insulating layer above a channel region of the thin film, and the epitaxial film has thicker regions suitable for contact to source and drain electrodes. Gate electrodes may be isolated from and oppose both sides of the superconducting thin regions so that enhanced modulation of a current in the thin region is provided.The invention provides high speed and high efficiency switches and modulators.

Abstract: A flexible superconducting wire element comprising a flexible tape of partially stabilized (.about.3 mole % yttria) yttria-stabilized zirconia (YSZ), a buffer layer of fully stabilized (between 8 and 18 mole % yttria, preferably 9 mole %) YSZ deposited on the flexible tape, and a high-temperature, perovskite superconductor such as YBaCuO deposited on the buffer layer. The tape provides the strength while remaining flexible. The buffer layer is flexible because of its thinness (.about.100 nm), but provides a good crystallographic template for the growth of oriented perovskite superconductors. Thereby, the superconducting properties of the wire element approach those of a superconducting film deposited on a rigid substrate.

Abstract: A method of growing KTa.sub.x Nb.sub.1-x O.sub.3 by pulsed laser evaporation. In order to compensate for the volatile K, two targets are prepared, one of sintered oxide powder having K, Ta, and Nb in amounts stoichiometric to KTa.sub.x Nb.sub.1-x O.sub.3 and the other of melt-grown KNO.sub.3. The method can also be used to form other complex materials having volatile components using a variety of sputtering growth techniques. The two targets are mounted on a rotating target holder and are alternately ablated by the laser beam. The KNO.sub.3 provides excess K, thus allowing the growth of a stoichiometric film. The method can be applied to many complex materials for which some of the components are volatile.

Abstract: A superconducting device and method of making in which a superconducting YBaCuO layer is laser deposited on a SrTiO.sub.3 or similar substrate such that the c-axis of the YBaCuO layer is vertically aligned with that of the substrate. A non-superconducting layer of PrBaCuO or MgO is laser deposited on the superconducting layer and another superconducting YBaCuO layer is laser deposited on the non-superconducting layer with the c-axes of all the layers being aligned. Contacts are applied to the two superconducting layers to form a junction device across the non-superconducting layer, which acts as a barrier layer.