Abstract: A sample collection system includes a vial and a collection stick. The collection stick includes an elongated handle portion and an absorbent head portion detachably connected to the handle portion. The absorbent head portion is configured to absorb and retain the fluid sample therein prior to insertion of the collection stick within the vial. During the sample collection process, the collection stick is inserted into the vial to express the fluid sample from the absorbent head portion into the vial. The absorbent head portion is retained within the vial in a generally compressed state with the handle portion being detached and removed from the vial.

Abstract: A specimen collection system, container device, and a method and computer program product for collecting and securing chain of custody (COC) information related to a specimen is provided. The system, method, and computer program product guides a collector to collect a complete COC data set related to a specimen, detect at least one substance in the specimen using a testing device operably engaged with a specimen container configured to receive the specimen, and direct the complete COC data set to an RFID device or bar code label operably engaged with the specimen container.

Abstract: A multi-terminal Group III-V semiconductor high electron mobility field effect transistor comprised of a sandwich of molecular beam epitaxially grown layers and including two high mobility charge flow channels in respective two dimensional electron gas regions implemented, for example, by at least one doped layer of aluminum gallium arsenide adjacent an undoped gallium arsenide layer separated by a heterojunction. A pair of opposing two dimensional electron gas (2DEG) regions are generated in the layer of undoped gallium arsenide by the bending of the energy levels of the semiconductor materials. Charge flow occurs in a unidirectional fashion from one channel to the other in the common undoped gallium arsenide layer under the control of an electric field applied transversely through the structure by means of a top gate electrode and a bottom field plate electrode.

Abstract: A superlattice semiconductor device consisting of a plurality of multi-dimensional charge carrier confinement regions of semiconductor material exhibiting relatively high charge carrier mobility and a low band gap which are laterally located in a single planar layer of semiconductor material exhibiting a relatively low charge carrier mobility and high band gap and wherein the confinement regions have sizes and mutual separation substantially equal to or less than the appropriate deBroglie wavelength. The device, in its preferred form, comprises a thin film of semiconductor material selected from group II-VI or III-V compounds or silicon wherein there is formed laterally located cylindrically shaped periodic regions which are adapted to act as quantum well confinement regions for electrons.