Abstract: A spark gap device that is formed in an integrated circuit (IC). The IC has a dielectric substrate upon which a high-voltage switch is disposed. The switch includes an anode element and a cathode element separated from each other by a spark gap. A trigger electrode is disposed on the substrate material in the spark gap. A capacitor is electrically coupled to the trigger electrode. The cathode and anode elements and the trigger electrode preferably are at least partially covered with a dielectric material. When the capacitor is charged, the charge on the capacitor exerts a strong electric field on the cathode and anode elements that causes ions to migrate in the cathode and anode elements toward the spark gap. When the trigger electrode is excited by an electrical current, the ions arc across the gap and a conductive path is created between the cathode element and the anode element.

Abstract: A semiconductor bridge (SCB) device. In one embodiment, the SCB device includes a laminate layer on top of an insulating material, wherein the laminate layer comprises a series of layers of at least two reactive materials, and wherein the laminate layer comprises two relatively large sections that substantially cover the surface area of the insulating material, and a bridge section joining the two relatively large sections. At least one conductive contact pad is coupled to at least one of the series of layers, wherein a predetermined current through the conductive contact pad causes the bridge section to initiate a reaction in which the laminate layer is involved. In one embodiment, the SCB device includes an integrated diode formed by an interface of the insulating material with another material, such as a metal.

Abstract: A semiconductor bridge (SCB) device. In one embodiment, the SCB device includes a laminate layer on top of an insulating material, wherein the laminate layer comprises a series of layers of at least two reactive materials, and wherein the laminate layer comprises two relatively large sections that substantially cover the surface area of the insulating material, and a bridge section joining the two relatively large sections. At least one conductive contact pad is coupled to at least one of the series of layers, wherein a predetermined current through the conductive contact pad causes the bridge section to initiate a reaction in which the laminate layer is involved. In one embodiment, the SCB device includes an integrated diode formed by an interface of the insulating material with another material, such as a metal.

Abstract: A semiconductor bridge (SCB) device. In one embodiment, the SCB device includes a laminate layer on top of an insulating material, wherein the laminate layer comprises a series of layers of at least two reactive materials, and wherein the laminate layer comprises two relatively large sections that substantially cover the surface area of the insulating material, and a bridge section joining the two relatively large sections. At least one conductive contact pad is coupled to at least one of the series of layers, wherein a predetermined current through the conductive contact pad causes the bridge section to initiate a reaction in which the laminate layer is involved. In one embodiment, the SCB device includes an integrated diode formed by an interface of the insulating material with another material, such as a metal.

Abstract: An electro-explosive device (“EED”) having resistors fabricated on a thermally conductive substrate and interconnected by a central bridge element. The resistance of the bridge element is lower than that of the resistors, which have a larger surface area to volume ratio. A layer of zirconium is placed on the bridge element and explodes into a plasma along with the bridge element in order to ignite a pyrotechnic compound. The substrate using integrated circuit fabrication techniques and the conductive bridge of the EED is overcoated with a composite overcoat comprising a metal and an oxidizer, which produces a chemical explosion upon plasma vaporization of the conductive bridge.

Abstract: An electro-explosive device (“EED”) having resistors fabricated on a thermally conductive substrate and interconnected by a central bridge element. The resistance of the bridge element is lower than that of the resistors, which have a larger surface area to volume ratio. The conductive bridge of the EED is overcoated with a composite overcoat comprising a metal and an oxidizer, which produce a chemical explosion upon plasma vaporization of the conductive bridge.

Abstract: An electro-explosive device is provided for detonating a pyrotechnic mix disposed adjacent the device to initiate an explosion. The device comprises a silicon wafer semiconductor substrate having a top surface and a bottom surface. The top surface of the substrate is covered with an insulating layer and a cavity is formed through the insulating layer a predetermined distance into the substrate. A first layer of conducting material covers the insulating layer and the interior walls of the cavity and a second layer of conducting material covers the bottom surface of the substrate. A primary explosive material is packed in the cavity. When the first and second layers of conducting material are coupled to a source of electric current, the current flows into the conducting material lining the walls of the cavity causing it to explode through ohmic heating in a plasma, thus igniting the primary explosive material within the cavity.

Abstract: An electro-explosive device has two serpentine resistors fabricated on a thermally conductive substrate with the resistors being interconnected by a central bridge element. The resistance of the bridge element is much lower than that of the serpentine resistors and the serpentine resistors have a much larger surface area to volume ratio. A layer of zirconium is placed on the bridge element and explodes into a plasma along with the bridge element in order to ignite a pyrotechnic compound. The resistance of the bridge element increases with temperature whereby the bridge element receives more of the energy from the applied signal as the temperature increases. The EED is insensitive to coupled RF energy and to an electrostatic discharge since most of the energy from these stray signals is directed to the serpentine resistors and not to the bridge element. In another embodiment, two of the resistors are metal-oxide phase variable resistances and a third resistor is formed from a bowtie-shaped layer of zirconium.

Abstract: An electro-explosive device has two serpentine resistors fabricated on a thermally conductive substrate with the resistors being interconnected by a central bridge element. The resistance of the bridge element is much lower than that of the serpentine resistors and the serpentine resistors have a much larger surface area to volume ratio. A layer of zirconium is placed on the bridge element and explodes into a plasma along with the bridge element in order to ignite a pyrotechnic compound. The resistance of the bridge element increases with temperature whereby the bridge element receives more of the energy from the applied signal as the temperature increases. The EED is insensitive to coupled RF energy and to an electrostatic discharge since most of the energy from these stray signals is directed to the serpentine resistors and not to the bridge element. In another embodiment, two of the resistors are metal-oxide phase variable resistances and a third resistor is formed from a bowtie-shaped layer of zirconium.

Abstract: An electroexplosive device utilizing dielectrics and semiconductors of various configurations, which is of compact size, resistant to breakage, extremely reliable, shielded from accidental ignition resulting from stray RF signals and accidental electrostatic discharge, and the firing characteristics of which may be conveniently varied to achieve desired performance objectives.

Abstract: An insensitive electroexplosive device to electrically ignite explosives is isclosed. This device is inherently immune to radio frequency (RF) radiation, and also provides protection against DC or very low frequency RF induced by arcing. A central feature is use of zeners and capacitors to form a reactively balanced bridge circuit. When constructed in semiconductor form as described herein, the device is capable of incorporation in small caliber ordnance.

Abstract: A device to protect electromagnetic devices and the method to manufacture e device is disclosed. The novel structure is inherently immune to sinusoidal radio frequency (RF) radiation, and also offers protection against stray signals induced by RF arcing. A main feature is the monolithic construction which reduces dramatically the coupling area for direct RF radiation. An oxide layer is thermally grown on a silicate substrate to form a dielectric, then a resistive layer of nichrome is sputtered to form a heating element. This process places the resistive bridgewire in direct contact with distributed capacitance.