Abstract: Traditionally, sol-gel silicates have been reported as being high temperature processable at 400 C to give reasonably dense films that showed good leakage current densities (<5×10?8 A/cm2). Recently we have discovered that we are able to prepare films from particular combinations of sol-gel silicate precursors that cure at 135° C. to 250° C. and give good leakage current density values (9×10?9 A/cm2 to 1×10?10 A/cm2) as well, despite the decrease in processing temperatures. These are some of the first examples of silicates being cured at lower temperatures where the leakage current density is sufficient low to be used as low temperature processed or solution processable or printable gate dielectrics for flexible or lightweight thin film transistors. These formulations may also be used in the planarization of stainless steel foils for thin film transistors and other electronic devices.

Abstract: A photodefinable, organosilicate material having a dielectric constant (?) of 3.5 or below and a method for making and using same, for example, in an electronic device, is described herein. In one aspect, there is provided a composition for preparing a photodefinable material comprising: a silica source capable of being sol-gel processed and having a molar ratio of carbon to silicon within the silica source contained therein of at least 0.5 or greater; a photoactive compound; optionally a solvent; and water provided the composition contains 0.1% by weight or less of an added acid where the acid has a molecular weight of 500 or less.

Abstract: The present invention provides a top coat composition comprising a silicon-containing polymer prepared by hydrolysis and condensation of at least one silica source; a solvent; optionally a catalyst; and optionally water, wherein the silicon-containing polymer depolymerizes upon exposure to an aqueous base-containing solution.

Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention, the performance of the dielectric material may be improved by controlling the weight percentage of ethylene oxide groups in the at least one porogen.

Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention, the performance of the dielectric material may be improved by controlling the weight percentage of ethylene oxide groups in the at least one porogen.

Abstract: Silica-based materials and films having a dielectric constant of 3.7 or below and compositions and methods for making and using same are disclosed herein. In one aspect, there is provided a composition for preparing a silica-based material comprising an at least one silica source, a solvent, an at least one porogen, optionally a catalyst, and optionally a flow additive wherein the solvent boils at a temperature ranging from 90° C. to 170° C. and is selected from the group of compounds represented by the following formulas: HO—CHR8—CHR9—CH2—CHR10R11 where R8, R9, R10 and R11 can independently be an alkyl group ranging from 1 to 4 carbon atoms or a hydrogen atom; and R12—CO—R13 where R12 is a hydrocarbon group having from 3 to 6 carbon atoms; R13 is a hydrocarbon group having from 1 to 3 carbon atoms; and mixtures thereof.

Abstract: The invention describes a highly efficient catalytic pollution control process for removing N.sub.2 O from gaseous mixtures. The process utilizes catalysts derived from anionic clay minerals, which after appropriate heat activation, provide superior N.sub.2 O decomposition activity. The catalytic process comprises contacting an N.sub.2 O-containing gaseous mixture with the decomposition catalyst under conditions sufficient to convert the N.sub.2 O into gaseous nitrogen and gaseous oxygen. The process catalysts are derived from anionic clay materials such as the hydrotalcites, sjogrenites and pyroaurites. A small but critical amount of an activator metal is provided to promote the decomposition of N.sub.2 O, particularly in wet gas steams. The activator metal may be an alkali metal such as sodium, potassium or lithium, or an alkaline-earth metal such as magnesium, with sodium giving particularly good results.

Abstract: The invention describes a highly efficient catalytic pollution control process for removing N.sub.2 O from gaseous mixtures. The process utilizes catalysts derived from anionic clay minerals, which after appropriate heat activation, provide superior N.sub.2 O decomposition activity. The catalytic process comprises contacting an N.sub.2 O -containing gaseous mixture with the decomposition catalyst under conditions sufficient to convert the N.sub.2 O into gaseous nitrogen and gaseous oxygen. The process catalysts are derived from anionic clay materials such as the hydrotalcites, sjogrenites and pyroaurites.

Abstract: Carbon molecular sieves, useful in the separation of air into oxygen and nitrogen, are improved through modification of the micropores of the sieve by contact with the pyrolysis products of a carbon-containing compound in the gaseous state diluted with helium, with or without nitrogen as a part of the diluting gas. Volatile organic compounds, such as trimethylcyclohexane, are used with the diluent gas to narrow the micropore openings of a carbon molecular sieve and increase its kinetic selectivity for oxygen adsorption. Carbon dioxide and helium or argon in the diluent gas are used to open pores available to contacting gases.