Patents by Inventor Thomas A. Estelle

Thomas A. Estelle has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Processes for photolithography
    Patent number: 10180627
    Abstract: New lithographic processing methods are provided which are particularly useful in immersion lithography schemes. In one aspect, processes of the invention comprise: applying on a substrate a photoresist composition; exposing the photoresist layer to radiation activating for the photoresist composition; removing a portion but not all of the exposed photoresist layer; and developing the treated photoresist layer to provide a photoresist relief image.
    Type: Grant
    Filed: June 8, 2010
    Date of Patent: January 15, 2019
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Deyan Wang, George G. Barclay, Thomas A. Estelle, Kenneth J. Spizuoco, Doris Kang
  • Photoresist pattern trimming compositions and methods
    Patent number: 9448486
    Abstract: Provided are compositions and methods for trimming a photoresist pattern. The photoresist pattern trimming composition comprises: a matrix polymer comprising a unit formed from a monomer of the following general formula (I): wherein: R1 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; R2 is chosen from C1-C15 alkylene; and R3 is chosen from C1-C3 fluoroalkyl; an aromatic acid that is free of fluorine; and a solvent. The compositions and methods find particular applicability in the manufacture of semiconductor devices.
    Type: Grant
    Filed: December 30, 2014
    Date of Patent: September 20, 2016
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Cong Liu, Seung-Hyun Lee, Kevin Rowell, Gerhard Pohlers, Cheng-Bai Xu, Wenyan Yin, Thomas A. Estelle, Shintaro Yamada
  • PHOTORESIST PATTERN TRIMMING COMPOSITIONS AND METHODS
    Publication number: 20150185620
    Abstract: Provided are compositions and methods for trimming a photoresist pattern. The photoresist pattern trimming composition comprises: a matrix polymer comprising a unit formed from a monomer of the following general formula (I): wherein: R1 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; R2 is chosen from C1-C15 alkylene; and R3 is chosen from C1-C3 fluoroalkyl; an aromatic acid that is free of fluorine; and a solvent. The compositions and methods find particular applicability in the manufacture of semiconductor devices.
    Type: Application
    Filed: December 30, 2014
    Publication date: July 2, 2015
    Inventors: Cong LIU, Seung-Hyun LEE, Kevin ROWELL, Gerhard POHLERS, Cheng-Bai XU, Wenyan YIN, Thomas A. ESTELLE, Shintaro YAMADA
  • PROCESSES FOR PHOTOLITHOGRAPHY
    Publication number: 20110003257
    Abstract: New lithographic processing methods are provided which are particularly useful in immersion lithography schemes. In one aspect, processes of the invention comprise: applying on a substrate a photoresist composition; exposing the photoresist layer to radiation activating for the photoresist composition; removing a portion but not all of the exposed photoresist layer; and developing the treated photoresist layer to provide a photoresist relief image.
    Type: Application
    Filed: June 8, 2010
    Publication date: January 6, 2011
    Applicant: Rohm and Haas Electronic Materials LLC
    Inventors: Deyan Wang, George G. Barclay, Thomas A. Estelle, Kenneth J. Spizuoco, Doris Kang