Patents by Inventor Thomas A. Kamp

Thomas A. Kamp has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method to improve profile control and N/P loading in dual doped gate applications
    Patent number: 7682980
    Abstract: A method for etching a polysilicon gate structure in a plasma etch chamber is provided. The method initiates with defining a pattern protecting a polysilicon film to be etched. Then, a plasma is generated. Next, substantially all of the polysilicon film that is unprotected is etched. Then, a silicon containing gas is introduced and a remainder of the polysilicon film is etched while introducing a silicon containing gas. An etch chamber configured to introduce a silicon containing gas during an etch process is also provided.
    Type: Grant
    Filed: January 25, 2007
    Date of Patent: March 23, 2010
    Assignee: Lam Research Corporation
    Inventors: Helene Del Puppo, Frank Lin, Chris Lee, Vahid Vahedi, Thomas A. Kamp, Alan J. Miller, Saurabh Ullal, Harmeet Singh
  • Method to improve profile control and N/P loading in dual doped gate applications
    Patent number: 7186661
    Abstract: A method for etching a polysilicon gate structure in a plasma etch chamber is provided. The method initiates with defining a pattern protecting a polysilicon film to be etched. Then, a plasma is generated. Next, substantially all of the polysilicon film that is unprotected is etched. Then, a silicon containing gas is introduced and a remainder of the polysilicon film is etched while introducing a silicon containing gas. An etch chamber configured to introduce a silicon containing gas during an etch process is also provided.
    Type: Grant
    Filed: June 27, 2003
    Date of Patent: March 6, 2007
    Assignee: Lam Research Corporation
    Inventors: Helene Del Puppo, Frank Lin, Chris Lee, Vahid Vahedi, Thomas A. Kamp, Alan J. Miller, Saurabh Ullal, Harmeet Singh
  • Use of silicon containing gas for CD and profile feature enhancements of gate and shallow trench structures
    Patent number: 7098141
    Abstract: A semiconductor manufacturing process provides a shallow trench in a silicon layer using a silicon containing etch gas to provide controlled top and/or bottom rounding of the trench or to enhance profile control and/or critical dimension control by controlled deposition across a semiconductor substrate. A gate structure can be etched on a semiconductor substrate using a silicon containing gas to enhance profile control and/or critical dimension control.
    Type: Grant
    Filed: March 3, 2003
    Date of Patent: August 29, 2006
    Assignee: Lam Research Corporation
    Inventors: Thomas A. Kamp, Alan J. Miller
  • Method to improve profile control and n/p loading in dual doped gate applications
    Publication number: 20040175950
    Abstract: A method for etching a polysilicon gate structure in a plasma etch chamber is provided. The method initiates with defining a pattern protecting a polysilicon film to be etched. Then, a plasma is generated. Next, substantially all of the polysilicon film that is unprotected is etched. Then, a silicon containing gas is introduced and a remainder of the polysilicon film is etched while introducing a silicon containing gas. An etch chamber configured to introduce a silicon containing gas during an etch process is also provided.
    Type: Application
    Filed: June 27, 2003
    Publication date: September 9, 2004
    Applicant: LAM RESEARCH CORPORATION
    Inventors: Helene Del Puppo, Frank Lin, Chris Lee, Vahid Vahedi, Thomas A. Kamp, Alan J. Miller