Abstract: A roughing disc for machining material surfaces, which may have a disc-shaped main body having a tool side, which can face a tool, and a workpiece side, which can face a workpiece, the main body having a central opening through which an axis of rotation passes and which serves for direct or indirect attachment of a drive shaft of the tool, a disc-shaped backing layer disposed on the tool side, at least one abrasive layer, and a separating layer between adjacent layers. The backing layer may be made of a material mixture that is free of abrasive additives and that has at least one mineral additive.

Abstract: An abrasive particle (01) having a shell (02) and a hollow space (03) arranged within the shell (02) is proposed.

Abstract: The invention relates to a multilayer abrasive particle (01) having a layer structure of stacked layers (02), each of the layers (02) being formed parallel to a plane (E). The exposed surfaces (04) of the layers (02) not covered by another layer and/or the edges (08) connecting the exposed surfaces (04) extend at least partially convexly or concavely in relation to the plane (E) and/or to a plane (E2) that is perpendicular thereto and comprises the direction (03) of the layer thickness.

Abstract: A method for producing multilayer abrasive particles (12) is proposed, comprising the following method steps: providing a substrate support (01) and at least one dispersion of an abrasive particle precursor (05); repeatedly positioning at least one grid structure (02) above the substrate support (01), covering areas (03) being defined by at least partially covered grid meshes (11) and printing areas (04) being defined by open grid meshes (11); applying the at least one dispersion of an abrasive particle precursor (05) onto the grid structure (02), a contact being formed between the grid structure (02) and the substrate support (01) or layers (08) arranged on the substrate support (01), and a dispersion layer (07) being deposited in the printing areas (04) on the substrate support (01) or on the layers (08) previously arranged thereon when the contact is lifted, and subsequently drying each deposited dispersion layer (07) to form a layer (08).

Abstract: The invention relates to a multilayer abrasive particle (01) having a layer structure of stacked layers (02), each of the layers (02) being formed parallel to a plane (E). The exposed surfaces (04) of the layers (02) not covered by another layer and/or the edges (08) connecting the exposed surfaces (04) extend at least partially convexly or concavely in relation to the plane (E) and/or to a plane (E2) that is perpendicular thereto and comprises the direction (03) of the layer thickness.

Abstract: A method for producing multilayer abrasive particles (12) is proposed, comprising the following method steps: providing a substrate support (01) and at least one dispersion of an abrasive particle precursor (05); repeatedly positioning at least one grid structure (02) above the substrate support (01), covering areas (03) being defined by at least partially covered grid meshes (11) and printing areas (04) being defined by open grid meshes (11); applying the at least one dispersion of an abrasive particle precursor (05) onto the grid structure (02), a contact being formed between the grid structure (02) and the substrate support (01) or layers (08) arranged on the substrate support (01), and a dispersion layer (07) being deposited in the printing areas (04) on the substrate support (01) or on the layers (08) previously arranged thereon when the contact is lifted, and subsequently drying each deposited dispersion layer (07) to form a layer (08).

Abstract: An abrasive particle (01) having a shell (02) and a hollow space (03) arranged within the shell (02) is proposed.

Abstract: A transport unit for carrying a plurality of lidded containers includes two parallel retaining plates, which have an arrangement of openings for retaining the lidded containers. The lidded containers are tubular containers with a closure lid at the top of the container which projects radially outward with respect to the container. Lidded containers of a group of lidded containers are held parallel to each other by the openings of one retaining plate, and lidded containers of another group of lidded containers are held parallel to each other by openings of the other retaining plate. The lidded containers of the one group are disposed oppositely aligned to the lidded containers of the other group and nested within each other.

Abstract: The invention relates to a composition, especially for an elastomer body of an elastic coupling, comprising the following components:—polyisoprene rubber having a proportion of 20 to 30% by weight,—butadiene rubber having a proportion of 20 to 30% by weight, based in each case on the total weight of the composition. The invention further relates to the use of the composition for production of an elastomer body, especially for an elastic coupling, preferably elastic shaft coupling. The invention additionally relates to an elastomer body, especially for an elastic coupling, which comprises the composition. The invention also relates to a coupling comprising the composition or the elastomer body.

Abstract: A method for etching a polysilicon gate structure in a plasma etch chamber is provided. The method initiates with defining a pattern protecting a polysilicon film to be etched. Then, a plasma is generated. Next, substantially all of the polysilicon film that is unprotected is etched. Then, a silicon containing gas is introduced and a remainder of the polysilicon film is etched while introducing a silicon containing gas. An etch chamber configured to introduce a silicon containing gas during an etch process is also provided.

Abstract: There is described an injection molding machine which is provided in particular for injection-compression moulding, wherein the injection moulding machine has at least the following units: an injection unit, a closing unit and a pre-plastification unit. The injection moulding machine also has a linear drive unit which is provided for driving the closing unit. An additional linear drive unit is provided for driving the injection unit.

Abstract: A device and a method for automatic, computer-based similarity weighting of text expressions. The system and method contemplate a document data bank unit, a candidate expression memory unit and a similarity weight value calculation unit. The similarity weight values agw(t1, t2) can be calculated for the individual pairs of expressions on the basis of a similarity measure occ_con(t1, t2) which takes into account both the total frequency of the common occurrence of the two expressions of one pair of expressions within one text segment in a quantity of several text segments, and the total number of different context expressions in the quantity of text segments.

Abstract: An arrangement for sealing a housing with a cover that includes a central hole for holding a gasket for a shaft extending through the gasket in the installed state, and at least first and second hollow-cylindrical protuberances which project roughly in the direction of the shaft relative to the areas of the cover which directly surrounds them. The protuberances are inserted into the corresponding cavities of the housing. The peripheral surfaces of the first protuberance and its respective cavity adjoin one another essentially without play, and the second protuberance can be essentially freely positioned within its cavity in the direction of a line which connects the two center points of the two protuberances, with the second protuberance adjoining at least one point of the peripheral surface of the cavity in the direction of the cavity diameter which is perpendicular to the line.

Abstract: A semiconductor processing system is provided. The semiconductor processing system includes a chamber. The chamber includes a gas inlet, a top electrode configured to strike a plasma inside the chamber, and a support for holding a substrate. A controller configured to detect a passivation starved condition during an etching operation is provided. The controller is further configured to introduce a passivation enhancing gas through the gas inlet during the etching operation in response to detecting the passivation starved condition.

Abstract: A method for etching a polysilicon gate structure in a plasma etch chamber is provided. The method initiates with defining a pattern protecting a polysilicon film to be etched. Then, a plasma is generated. Next, substantially all of the polysilicon film that is unprotected is etched. Then, a silicon containing gas is introduced and a remainder of the polysilicon film is etched while introducing a silicon containing gas. An etch chamber configured to introduce a silicon containing gas during an etch process is also provided.

Abstract: A method for etching a polysilicon gate structure in a plasma etch chamber is provided. The method initiates with defining a pattern protecting a polysilicon film to be etched. Then, a plasma is generated. Next, substantially all of the polysilicon film that is unprotected is etched. Then, a silicon containing gas is introduced and a remainder of the polysilicon film is etched while introducing a silicon containing gas. An etch chamber configured to introduce a silicon containing gas during an etch process is also provided.

Abstract: In an arrangement for sealing a housing with a cover, the cover includes a central hole for holding a gasket for a shaft which extends through the gasket in the installed state, and at least first and a second hollow-cylindrical protuberances which project roughly in the direction of the shaft relative to the areas of the cover which directly surrounds them. The protuberances are adapted to be inserted into the corresponding cavities of the housing.

Abstract: A semiconductor manufacturing process provides a shallow trench in a silicon layer using a silicon containing etch gas to provide controlled top and/or bottom rounding of the trench or to enhance profile control and/or critical dimension control by controlled deposition across a semiconductor substrate. A gate structure can be etched on a semiconductor substrate using a silicon containing gas to enhance profile control and/or critical dimension control.

Abstract: A process for pre-tapering features in a material, such as silicon, prior to etching shallow trenches in the material includes opening a hard mask over the material such that first pre-tapered features are formed in the material. The process can include a hard mask overetch step, which modifies the profile of the first pre-tapered features to form second pre-tapered features in the material. Shallow trench isolation features are formed in the pre-tapered material.

Abstract: A method for etching a polysilicon gate structure in a plasma etch chamber is provided. The method initiates with defining a pattern protecting a polysilicon film to be etched. Then, a plasma is generated. Next, substantially all of the polysilicon film that is unprotected is etched. Then, a silicon containing gas is introduced and a remainder of the polysilicon film is etched while introducing a silicon containing gas. An etch chamber configured to introduce a silicon containing gas during an etch process is also provided.