Abstract: In various embodiments, components such as interconnects and/or endplates of a solid-state electrochemical device are coated with materials such as, for example, graphite, copper, aluminum, carbide ceramics, nitride ceramics, conversion coatings, or aluminum intermetallics.

Abstract: In various embodiments, components of a solid oxide fuel cell device such as interconnect plates, seals, and/or endplates may be composed of materials including aluminum, copper, and/or graphite.

Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication. A structure includes a relaxed substrate including a bulk material, a strained layer directly on the relaxed substrate, where a strain of the strained layer is not induced by the relaxed substrate, and a transistor formed on the strained layer.

Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication. A structure includes a relaxed substrate including a bulk material, a strained layer directly on the relaxed substrate, where a strain of the strained layer is not induced by the relaxed substrate, and a transistor formed on the strained layer.

Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

Abstract: Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations, as well as fabrication of semiconductor devices based on such lattice-mismatched heterostructures.

Abstract: Electronic modules are formed by encapsulating microelectronic dies within cavities in a substrate.

Abstract: Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations, as well as fabrication of semiconductor devices based on such lattice-mismatched heterostructures.

Abstract: Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations, as well as fabrication of semiconductor devices based on such lattice-mismatched heterostructures.

Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

Abstract: Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations, as well as fabrication of semiconductor devices based on such lattice-mismatched heterostructures.

Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

Abstract: An apparatus is provided comprising one or more matrices contained within a shell, wherein the one or more matrices comprise between 1-99 wt % of a water-insoluble host material and between 1-99 wt % of a guest substrate, wherein the guest substrate comprises between 1-100 wt % of one or more disinfectant compounds or one or more beneficial compounds; and wherein the shell comprises a water-insoluble shell polymer, and one or more apertures. The host material may be a polymer. The apparatus is used for treating an aqueous medium with one or more disinfectant compounds or one or more beneficial compounds.

Abstract: Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations, as well as fabrication of semiconductor devices based on such lattice-mismatched heterostructures.

Abstract: Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations, as well as fabrication of semiconductor devices based on such lattice-mismatched heterostructures.

Abstract: An apparatus for water filtration includes a base a filtration receptacle coupled to the base and a carafe removably coupled to the base. The filtration receptacle includes a water inlet and a water outlet. The filtration receptacle includes a pleated filter positioned between the water inlet and the water outlet. The pleated filter has a pleat face characterized by a surface having a plurality of peaks and a plurality of valleys, such that the surface is disposed in a plurality of planes. The filtration receptacle is structurally configured to maintain the pleated filter in an orientation wherein the pleat face of the pleated filter transverses a water-flow path extending from the water inlet to the water outlet. The filtration receptacle is further configured to induce water-flow along the water-flow path by at least one of a receptacle orientation and a receptacle geometry. The carafe includes an inlet coupled to the water outlet in the filtration receptacle.

Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.