Patents by Inventor Thomas A. Pandolfi

Thomas A. Pandolfi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ion beam incident angle detection assembly and method
    Patent number: 8455848
    Abstract: In an ion implanter, a detector assembly is employed to monitor the ion beam current and incidence angle at the location of the work piece or wafer. The detector assembly includes a plurality of pairs of current sensors and a blocker panel. The blocker panel is coupled to the detector array to move together with the detector array. The blocker panel is also disposed a distance away from the sensors to allow certain of the beamlets that comprise the ion beam to reach the sensors. Each sensor in a pair of sensors measures the beam current incident thereon and the incident angle is calculated using these measurements. In this manner, beam current and incidence angle variations may be measured at the work piece site and be accommodated for, thereby avoiding undesirable beam current profiles.
    Type: Grant
    Filed: October 10, 2012
    Date of Patent: June 4, 2013
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventor: Thomas A. Pandolfi
  • Ion beam incident angle detection assembly and method
    Patent number: 8309938
    Abstract: In an ion implanter, a detector assembly is employed to monitor the ion beam current and incidence angle at the location of the work piece or wafer. The detector assembly includes a plurality of pairs of current sensors and a blocker panel. The blocker panel is disposed a distance away from the sensors to allow certain of the beamlets that comprise the ion beam to reach the sensors. Each sensor in a pair of sensors measures the beam current incident thereon and the incident angle is calculated using these measurements. In this manner, beam current and incidence angle variations may be measured at the work piece site and be accommodated for, thereby avoiding undesirable beam current profiles.
    Type: Grant
    Filed: September 29, 2009
    Date of Patent: November 13, 2012
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventor: Thomas A. Pandolfi
  • ION BEAM INCIDENT ANGLE DETECTION ASSEMBLY AND METHOD
    Publication number: 20110073777
    Abstract: In an ion implanter, a detector assembly is employed to monitor the ion beam current and incidence angle at the location of the work piece or wafer. The detector assembly includes a plurality of pairs of current sensors and a blocker panel. The blocker panel is disposed a distance away from the sensors to allow certain of the beamlets that comprise the ion beam to reach the sensors. Each sensor in a pair of sensors measures the beam current incident thereon and the incident angle is calculated using these measurements. In this manner, beam current and incidence angle variations may be measured at the work piece site and be accommodated for, thereby avoiding undesirable beam current profiles.
    Type: Application
    Filed: September 29, 2009
    Publication date: March 31, 2011
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventor: Thomas A. Pandolfi