Patents by Inventor Thomas A. Rawdanowicz

Thomas A. Rawdanowicz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Growth and integration of epitaxial gallium nitride films with silicon-based devices
    Patent number: 7803717
    Abstract: Epitaxial gallium nitride is grown on a silicon substrate while reducing or suppressing the formation of a buffer layer. The gallium nitride may be grown directly on the silicon substrate, for example using domain epitaxy. Alternatively, less than one complete monolayer of silicon nitride may be formed between the silicon and the gallium nitride. Subsequent to formation of the gallium nitride, an interfacial layer of silicon nitride may be formed between the silicon and the gallium nitride.
    Type: Grant
    Filed: October 21, 2004
    Date of Patent: September 28, 2010
    Assignee: North Carolina State University
    Inventors: Thomas A. Rawdanowicz, Jagdish Narayan
  • Growth and integration of epitaxial gallium nitride films with silicon-based devices
    Publication number: 20050124161
    Abstract: Epitaxial gallium nitride is grown on a silicon substrate while reducing or suppressing the formation of a buffer layer. The gallium nitride may be grown directly on the silicon substrate, for example using domain epitaxy. Alternatively, less than one complete monolayer of silicon nitride may be formed between the silicon and the gallium nitride. Subsequent to formation of the gallium nitride, an interfacial layer of silicon nitride may be formed between the silicon and the gallium nitride.
    Type: Application
    Filed: October 21, 2004
    Publication date: June 9, 2005
    Inventors: Thomas Rawdanowicz, Jagdish Narayan