Abstract: An apparatus and method for transmitting signal, the apparatus comprising a front end telecommunications module including a power amplifier, a matching circuit coupled to the power amplifier, and a filter coupled to the matching circuit, such that a signal received by the power amplifier is transmitted to the filter through the matching circuit. The telecommunications module provides quad-band capability in a compact design.

Abstract: An apparatus and method for transmitting signal, the apparatus comprising a front end telecommunications module including a power amplifier, a matching circuit coupled to the power amplifier, and a filter coupled to the matching circuit, such that a signal received by the power amplifier is transmitted to the filter through the matching circuit. The telecommunications module provides quad-band capability in a compact design.

Abstract: An apparatus and method for amplifying a radiofrequency (RF) signal. The apparatus comprises a control circuit including a first transistor, a second transistor, and a ballast resistor coupled between an emitter terminal of the first transistor and a base terminal of the second transistor, such that a control voltage applied to a base terminal of the first transistor controls the amplification of a signal applied to the base terminal of the second transistor. Additional elements may be coupled to the control circuit to improve the performance thereof, including a feedback stabilization circuit, a diode stack circuit, a bypass capacitor and an additional resistor.

Abstract: An apparatus and method for amplifying a radiofrequency (RF) signal. The apparatus comprises a control circuit including a first transistor, a second transistor, and a ballast resistor coupled between an emitter terminal of the first transistor and a base terminal of the second transistor, such that a control voltage applied to a base terminal of the first transistor controls the amplification of a signal applied to the base terminal of the second transistor. Additional elements may be coupled to the control circuit to improve the performance thereof, including a feedback stabilization circuit, a diode stack circuit, a bypass capacitor and an additional resistor.

Abstract: An apparatus and method for transmitting signal, the apparatus comprising a front end telecommunications module including a power amplifier, a matching circuit coupled to the power amplifier, and a filter coupled to the matching circuit, such that a signal received by the power amplifier is transmitted to the filter through the matching circuit. The telecommunications module provides quad-band capability in a compact design.

Abstract: A semiconductor amplifier includes collector straps that form air bridges over a set of transistors and make parallel electrical connections between the collectors of the transistor and collector contact pad. Base straps establish base bias and electrically connect a dc current source with bases of the transistors through resistive elements.

Abstract: A semiconductor amplifier includes collector straps that form air bridges over a set of transistors and make parallel electrical connections between the collectors of the transistor and collector contact pad. Base straps establish base bias and electrically connect a dc current source with bases of the transistors through resistive elements.

Abstract: In a power amplifier comprising a plurality of cascaded field effect transistors (FETs), a power sensing circuit for sensing the output power of the power amplifier comprising a FET device operative in a first linear mode and second saturated mode of operation, the FET having source, gate and drain electrodes; and a low value resistor connected between the source electrode and a reference potential for generating a voltage drop between the source and the reference potential such that when the FET operates in the saturation mode, the voltage drop is indicative of the output power of the power amplifier.

Abstract: A radio frequency (RF) power amplifier circuit comprising an RF gain stage formed on an integrated circuit (IC) chip comprising at least one field effect transistor configured for amplifying an RF signal to provide an amplified RF signal to an antenna at a given RF power level; a compensation circuit formed on the IC chip for generating a first voltage VS+ and a second voltage VS− at respective first and second output terminals, the voltage difference therebetween corresponding to a level of temperature or process fluctuation from a given level associated with the RF gain stage; and a control circuit comprising an operational amplifier coupled to the output terminals of the compensation circuit for receiving the first and second voltages VS+, VS− and outputting a control signal to the gate of the at least one FET of the RF gain stage to compensate the RF gain stage for the fluctuation, whereby a substantially constant power output to the antenna is maintained.

Abstract: A dual band power amplifier circuit comprising first and second power amplifiers each operative to amplify an RF signal of a particular frequency range at an output terminal thereof, wherein the output terminals of the amplifiers are coupled at a common node, and wherein the amplifiers are operative in a first saturation mode and a second linear mode; a control circuit for providing a first control signal to the first power amplifier and a second control signal to the second power amplifier for controlling the mode of operation of each amplifier; and a switching device having a first terminal coupled to the outputs of the first and second power amplifiers at the common node and to a power source at a second terminal, the switching device responsive to a third control signal from the control circuit for providing a high output impedance to the amplifiers for limiting leakage current when the first and second amplifiers are in the saturation mode, and for enabling current to be drawn from the power source to a