Abstract: The present invention provides transient receptor potential vanilloid (TRPV) modulators of formula (I). In particular, compounds described herein are useful for treating or preventing diseases, conditions and/or disorders modulated by TRPV3. Also provided herein are processes for preparing compounds described herein, intermediates used in their synthesis, pharmaceutical compositions thereof, and methods for treating or preventing diseases, conditions and/or disorders modulated by TRPV3.

Abstract: A radio frequency identification (“RFID”) application system for use with an RFID system adapted to apply an RFID tag to a product and method of operating the same. In one embodiment, the RFID application system includes a printer applicator controller configured to manage an operation of a printer applicator of the RFID system. The RFID application system also includes a compliance manager configured to coordinate RFID compliance data to derive a unique identification number for the RFID tag. The RFID application system still further includes an event manager configured to coordinate an operation of the printer applicator controller to facilitate proper placement of the RFID tag on the product.

Abstract: A radio frequency identification (RFID)-detect ranking system and method of operating the same. In one embodiment, the RFID-detect ranking system includes a matrix subsystem configured to construct a matrix of experiments based on product information, RFID reader information and RFID tag information. The RFID-detect ranking system also includes a data collection subsystem configured to facilitate an experiment and collect data to fill in results for each category of the matrix of experiments. The RFID-detect ranking system still further includes a ranking subsystem configured to assign an index based on the results for each category of the matrix of experiments, thereby providing a likelihood of success of reading an RFID tag located on a product with an RFID reader.

Abstract: A method for planarizing a layer of material on a semiconductor device is disclosed, which planarizes a layer on a semiconductor device using a high density plasma system, and uses a sacrificial layer having a desirable etch to deposition rate. Additionally, the method for planarizing a layer can be easily incorporated into the semiconductor fabrication process, and is capable of achieving both local and global planarization.

Abstract: An acetabular reamer includes a base, a first set of semi-circular blades attached to the base, and a second set of semi-circular blades also contacting the base, and crossing and intersecting with the first set of blades at right angles thereto. The base preferably includes a circular plate having a hexagonal drive hole in the center thereof and a plurality of slots in the periphery thereof for anchoring the blades. Each semi-circular blade includes a first end having a projection thereon, a second end opposite from said first end and also having a projection thereon, a first edge having serrated cutting teeth thereon, a second edge opposite from said first edge, and a first and second side surface. The cutting edge of the first set of blades includes a plurality of outwardly facing slots which mate with and engage a second set of inwardly facing slots in the second edge of said second blades.

Abstract: An acetabular reamer includes a base, a first set of semi-circular blades attached to the base, and a second set of semi-circular blades also contacting said base, and crossing and intersecting with said first set of blades at right angles thereto. The base preferably comprises a circular plate having a hexagonal drive hole in the center thereof and a plurality of slots in the periphery thereof for anchoring the blades. Each semi-circular blade includes a first end having a projection thereon, a second end opposite from said first end and also having a projection thereon, a first edge having serrated cutting teeth thereon, a second edge opposite from said first edge, and a first and second side surface. The cutting edge of the first set of blades includes a plurality of outwardly facing slots which mate with and engage a second set of inwardly facing slots in the second edge of said second blades.

Abstract: In a method for planarizing an insulating layer, the height of steps in a layer of insulating material are reduced while tapering side walls of the steps by forming a layer of sacrificial material between the steps and etching the insulating material and the sacrificial material in a low pressure plasma comprising reactive ions and facetting ions. This method combines many of the advantages of Resist Etch Back (REB) and argon facetting techniques while reducing the deleterious effects of macroloading and microloading.

Abstract: A plasma etching technique for producing tapered side walls on the desired Aluminum conductor pattern is described. This involves forming a resist pattern on the Aluminum layer of a wafer and carrying out a first etching step using Cl.sub.2, BCl.sub.3 and CF.sub.4 at predetermined flow rates and low pressure until all the exposed Aluminum is removed. At the end of this step the Aluminum side walls are virtually vertical and facets are present on the resist. A second etching step is carried out under essentially the same conditions as before except that the Cl.sub.2 is reduced. During this etching step the facets on the resist are propagated laterally while the Aluminum side walls become tapered. According to modifications a rounded or jogged configuration can be obtained on the side walls but these too are considered generally tapered in nature as they progress from a wider base to a narrower peak.

Abstract: In a silicon integrated circuit manufacturing process a layer of polysilicon is ion implanted with an n-type dopant and etched through a mask with a fluorine:chlorine mixture. The etchant undercuts at the mask to an extent dependent on the ratio of chlorine:fluorine and on the dopant level. By appropriately selecting that ratio and dopant level, polysilicon islands having a rounded profile can be achieved, this being most efficacious for subsequent deposition onto the polysilicon.