Patents by Inventor Thomas Aichinger
Thomas Aichinger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250107202Abstract: A transistor device is disclosed. The transistor device includes a semiconductor body and plurality of transistor cells. Each transistor cell includes: a drift region and a source region of a first doping type; a body region of a second doping type complementary to the first doping type; a field shaping region of the second doping type connected to a source node; and a gate electrode connected to a gate node. The gate electrode is arranged in a trench extending from a first surface into the semiconductor body. The gate electrode is dielectrically insulated from the body region by a gate dielectric. At least portions of the gate electrode are dielectrically insulated from the drift region by a field dielectric. The field shaping region adjoins the trench. The field dielectric comprises a high-k dielectric.Type: ApplicationFiled: September 11, 2024Publication date: March 27, 2025Inventors: Thomas Aichinger, Hans Weber, Michael Hell, Wolfgang Bergner, Armin Tilke, Grazvydas Ziemys, Alexey Mikhaylov, Gerald Rescher
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Publication number: 20250089343Abstract: A power semiconductor device is proposed. The power semiconductor device includes a silicon carbide (SiC) semiconductor body having a first surface and a second surface opposite to the first surface. The SiC semiconductor body includes a transistor cell area comprising transistor cells. Each of the transistor cells includes a gate structure including a gate dielectric structure and a gate electrode structure on the gate dielectric structure. The gate dielectric structure includes a first gate dielectric layer adjoining to the SiC semiconductor body. The gate dielectric structure further includes a second gate dielectric layer. The gate dielectric structure further includes charge storage layer arranged between the first gate dielectric layer and the second gate dielectric layer.Type: ApplicationFiled: September 4, 2024Publication date: March 13, 2025Inventors: Andreas HÜRNER, Michael HELL, Thomas AICHINGER
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Publication number: 20250089323Abstract: A power semiconductor device is proposed. The vertical power semiconductor device includes a silicon carbide (SiC) semiconductor body having a first surface and a second surface opposite to the first surface. The SiC semiconductor body includes a transistor cell area comprising gate structures, a gate pad area, and an interconnection area electrically coupling a gate electrode of the gate structures and a gate pad of the gate pad area via a gate interconnection. The vertical power semiconductor device further includes a source or emitter electrode. The vertical power semiconductor device further includes a first interlayer dielectric comprising a first interface to the source or emitter electrode and a second interface to at least one of the gate electrode, or the gate interconnection, or the gate pad, and wherein a conduction band offset at the first interface ranges from 1 eV to 2.5 eV.Type: ApplicationFiled: September 6, 2024Publication date: March 13, 2025Inventors: Thomas AICHINGER, Dethard PETERS, Michael HELL, Andreas HÜRNER
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Publication number: 20250056869Abstract: A wide band gap semiconductor device is proposed. The wide band gap semiconductor device includes a wide band gap semiconductor body having a first surface and a second surface opposite to the first surface along a vertical direction. A gate electrode structure is arranged in an active transistor area. The gate electrode structure includes a gate electrode and a gate dielectric arranged between the gate electrode and the wide band gap semiconductor body. A gate interconnection structure is arranged outside of the active transistor area. The gate interconnection structure includes an interconnection electrode and an interconnection dielectric arranged between the interconnection electrode and the wide band gap semiconductor body. Dielectric constants of a main dielectric component of at least two of i) a part of the gate interconnection dielectric, or ii) a first part of the gate dielectric, or iii) a second part of the gate dielectric differ from one another.Type: ApplicationFiled: August 9, 2024Publication date: February 13, 2025Inventors: Fabian RASINGER, Michael HELL, Thomas AICHINGER, Alexey MIKHAYLOV
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Publication number: 20250015148Abstract: A transistor device and a method for manufacturing a transistor device are disclosed. The transistor device includes a semiconductor body and a plurality of transistor cells. Each transistor cell includes: a drift region, a body region, and a source region; a gate electrode connected to a gate node; and a field electrode connected to a source node. The gate electrode is dielectrically insulated from the body region by a gate dielectric, and is arranged in a first trench extending from a first surface into the semiconductor body. The field electrode is dielectrically insulated from the drift region by a high-k dielectric, and is arranged in a second trench. The second trench extends from the first surface into the semiconductor body and is spaced apart from the first trench, and the field electrode extends at least as deep as the first trench into the semiconductor body.Type: ApplicationFiled: July 5, 2024Publication date: January 9, 2025Inventors: Thomas AICHINGER, Wolfgang BERGNER, Hans WEBER, Michael HELL, Armin TILKE, Grazvydas ZIEMYS
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Publication number: 20250006814Abstract: A method for forming an interface layer on a silicon carbide body comprises removing an oxide layer from a surface of a silicon carbide body to obtain a silicon carbide surface. The silicon carbide body comprises a source region of a first conductivity type and a body region of a second conductivity type. The method further comprises after removing the oxide layer, depositing an interface layer directly on the silicon carbide surface. The interface layer has a thickness of less or equal to 15 nm. The method further comprises forming an electrical insulator over the interface layer, and forming a gate electrode over the electrical insulator.Type: ApplicationFiled: June 27, 2024Publication date: January 2, 2025Inventors: Wolfgang LEHNERT, Fabian RASINGER, Thomas AICHINGER, Gerald RESCHER, Francisco Javier SANTOS RODRIGUEZ, Carsten SCHAEFFER, Armin TILKE
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Publication number: 20240405092Abstract: There is described a semiconductor device comprising an SiC body with a gate structure comprising a gate dielectric with a specific multilayer laminate structure including alternating layers of a first dielectric material and of a second dielectric material having a dielectric constant of 4 or higher. There is further described a method for manufacturing such a semiconductor device including an SiC body as mentioned before.Type: ApplicationFiled: May 15, 2024Publication date: December 5, 2024Inventors: Armin TILKE, Sandra KRAUSE, Thomas AICHINGER, Wolfgang LEHNERT, Francisco Javier SANTOS RODRIGUEZ
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Patent number: 12107128Abstract: A method of producing a semiconductor device includes forming a plurality of transistor cells in a SiC substrate and electrically connected in parallel to form a transistor having a specified operating temperature range. Forming each transistor cell includes forming a gate structure having a gate electrode, and a gate dielectric stack separating the gate electrode from the SiC substrate and including a ferroelectric insulator. The method further includes doping the ferroelectric insulator with a doping material such that the Curie temperature of the ferroelectric insulator is in a range above the specified operating temperature range of the transistor.Type: GrantFiled: September 5, 2023Date of Patent: October 1, 2024Assignee: Infineon Technologies AGInventors: Saurabh Roy, Thomas Aichinger, Hans-Joachim Schulze
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Patent number: 11940489Abstract: A semiconductor device includes: a semiconductor body; an electrical device formed in an active region of the semiconductor body, the active region including an interface between the semiconductor body and an insulating material; and a sensor having a bandwidth tuned to at least part of an energy spectrum of light emitted by carrier recombination at the interface when the electrical device is driven between accumulation and inversion, wherein an intensity of the emitted light is proportional to a density of charge trapping states at the interface, wherein the sensor is configured to output a signal that is proportional to the intensity of the sensed light. Corresponding methods of monitoring and characterizing the semiconductor device and a test apparatus are also described.Type: GrantFiled: October 15, 2021Date of Patent: March 26, 2024Assignee: Infineon Technologies AGInventors: Thomas Aichinger, Maximilian Wolfgang Feil, Andre Kabakow, Hans Reisinger
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Patent number: 11881512Abstract: A method includes providing a silicon carbide substrate, wherein a gate trench extends from a main surface of the silicon carbide substrate into the silicon carbide substrate and wherein a gate dielectric is formed on at least one sidewall of the gate trench, and forming a gate electrode in the gate trench, the gate electrode including a metal structure and a semiconductor layer between the metal structure and the gate dielectric.Type: GrantFiled: November 4, 2021Date of Patent: January 23, 2024Assignee: Infineon Technologies AGInventors: Ralf Siemieniec, Thomas Aichinger, Romain Esteve, Ravi Keshav Joshi, Shiqin Niu
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Publication number: 20230411460Abstract: A method of producing a semiconductor device includes forming a plurality of transistor cells in a SiC substrate and electrically connected in parallel to form a transistor having a specified operating temperature range. Forming each transistor cell includes forming a gate structure having a gate electrode, and a gate dielectric stack separating the gate electrode from the SiC substrate and including a ferroelectric insulator. The method further includes doping the ferroelectric insulator with a doping material such that the Curie temperature of the ferroelectric insulator is in a range above the specified operating temperature range of the transistor.Type: ApplicationFiled: September 5, 2023Publication date: December 21, 2023Inventors: Saurabh Roy, Thomas Aichinger, Hans-Joachim Schulze
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Publication number: 20230352520Abstract: A wide band gap semiconductor device includes a semiconductor body having first and second opposing surfaces along a vertical direction. Trench gate structures extend into the semiconductor body from the first surface and include a gate electrode structure and a gate dielectric structure arranged between the gate electrode structure and the semiconductor body. The gate dielectric structure includes a high-k dielectric layer. A first sidewall of a trench gate structure adjoins a first mesa region. A second sidewall of the trench gate structure adjoins a second mesa region. The first mesa region includes a body region of a first conductivity type adjoining the first sidewall. The second mesa region includes a shielding region of the first conductivity type. A bottom side of the shielding region has a larger first vertical distance to the first surface than a bottom side of the body region in the first mesa region.Type: ApplicationFiled: April 21, 2023Publication date: November 2, 2023Inventor: Thomas Aichinger
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Patent number: 11791383Abstract: A semiconductor device includes a SiC substrate and a plurality of transistor cells formed in the SiC substrate and electrically connected in parallel to form a transistor. Each transistor cell includes a gate structure including a gate electrode and a gate dielectric stack separating the gate electrode from the SiC substrate. The gate dielectric stack includes a ferroelectric insulator. The transistor has a specified operating temperature range, and the ferroelectric insulator is doped with a doping material such that the Curie temperature of the ferroelectric insulator is in a range above the specified operating temperature range of the transistor. A corresponding method of producing the semiconductor device is also described.Type: GrantFiled: July 28, 2021Date of Patent: October 17, 2023Assignee: Infineon Technologies AGInventors: Saurabh Roy, Thomas Aichinger, Hans-Joachim Schulze
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Publication number: 20230178615Abstract: A power transistor device includes a semiconductor substrate, a gate trench extending into the semiconductor substrate, a transistor gate provided in the gate trench, and an insulating structure formed between the transistor gate and a side wall of the gate trench. The insulating structure is configured to electrically insulate the transistor gate from a channel region which extends along the side wall of the gate trench. The insulating structure includes a layer of piezoelectric material.Type: ApplicationFiled: December 1, 2022Publication date: June 8, 2023Inventors: Saurabh Roy, Hans-Joachim Schulze, Oliver Blank, Josef Anton Moser, Thomas Aichinger
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Publication number: 20230121426Abstract: A semiconductor device includes: a semiconductor body; an electrical device formed in an active region of the semiconductor body, the active region including an interface between the semiconductor body and an insulating material; and a sensor having a bandwidth tuned to at least part of an energy spectrum of light emitted by carrier recombination at the interface when the electrical device is driven between accumulation and inversion, wherein an intensity of the emitted light is proportional to a density of charge trapping states at the interface, wherein the sensor is configured to output a signal that is proportional to the intensity of the sensed light. Corresponding methods of monitoring and characterizing the semiconductor device and a test apparatus are also described.Type: ApplicationFiled: October 15, 2021Publication date: April 20, 2023Inventors: Thomas Aichinger, Maximilian Wolfgang Feil, Andre Kabakow, Hans Reisinger
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Patent number: 11626477Abstract: A semiconductor component includes: gate structures extending from a first surface into an SiC semiconductor body; a drift zone of a first conductivity type formed in the SiC semiconductor body; first mesas and second mesas arranged between the gate structures in the SiC semiconductor body; body areas of a second conductivity type arranged in the first mesas and the second mesas, the body areas each adjoining a first side wall of one of the gate structures; first shielding areas of the second conductivity type adjoining a second side wall of one of the gate structures; second shielding areas of the second conductivity type adjoining the body areas in the second mesas; and diode areas of the conductivity type of the drift zone, the diode areas forming Schottky contacts with a load electrode between the first shielding areas and the second shielding areas.Type: GrantFiled: July 14, 2021Date of Patent: April 11, 2023Assignee: Infineon Technologies AGInventors: Ralf Siemieniec, Thomas Aichinger, Thomas Basler, Wolfgang Bergner, Rudolf Elpelt, Romain Esteve, Michael Hell, Daniel Kueck, Caspar Leendertz, Dethard Peters, Hans-Joachim Schulze
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Publication number: 20230035144Abstract: A semiconductor device includes a SiC substrate and a plurality of transistor cells formed in the SiC substrate and electrically connected in parallel to form a transistor. Each transistor cell includes a gate structure including a gate electrode and a gate dielectric stack separating the gate electrode from the SiC substrate. The gate dielectric stack includes a ferroelectric insulator. The transistor has a specified operating temperature range, and the ferroelectric insulator is doped with a doping material such that the Curie temperature of the ferroelectric insulator is in a range above the specified operating temperature range of the transistor. A corresponding method of producing the semiconductor device is also described.Type: ApplicationFiled: July 28, 2021Publication date: February 2, 2023Inventors: Saurabh Roy, Thomas Aichinger, Hans-Joachim Schulze
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Patent number: 11462611Abstract: A semiconductor device includes gate trenches formed in a SiC substrate and extending lengthwise in parallel in a first direction. A trench interval which defines a space between adjacent gate trenches extends in a second direction perpendicular to the first direction. Source regions of a first conductivity type formed in the SiC substrate occupy a first part of the space between adjacent gate trenches. Body regions of a second conductivity type opposite the first conductivity type formed in the SiC substrate and below the source regions occupy a second part of the space between adjacent gate trenches. Body contact regions of the second conductivity type formed in the SiC substrate occupy a third part of the space between adjacent gate trenches. Shielding regions of the second conductivity type formed deeper in the SiC substrate than the body regions adjoin a bottom of at least some of the gate trenches.Type: GrantFiled: December 4, 2020Date of Patent: October 4, 2022Assignee: Infineon Technologies AGInventors: Thomas Aichinger, Wolfgang Bergner, Paul Ellinghaus, Rudolf Elpelt, Romain Esteve, Florian Grasse, Caspar Leendertz, Shiqin Niu, Dethard Peters, Ralf Siemieniec, Bernd Zippelius
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Publication number: 20220262906Abstract: A silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) and a method for forming a SiC MOSFET are disclosed. In an example, the method includes forming a gate dielectric that adjoins a body region arranged in a semiconductor body, and forming a gate electrode on the gate dielectric. Forming the gate electrode includes forming a first electrode layer, implanting work function adjusting atoms into the first electrode layer, and forming a second electrode layer on the first electrode layer.Type: ApplicationFiled: February 15, 2022Publication date: August 18, 2022Inventors: Ralf SIEMIENIEC, Thomas AICHINGER, Ravi Keshav JOSHI, Werner SCHUSTEREDER
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Patent number: 11417747Abstract: In an example, a transistor device is provided. The transistor device includes a plurality of transistor cells each including a gate electrode and each at least partially integrated in a semiconductor body that includes a wide bandgap semiconductor material. The transistor device includes a gate pad arranged on top of the semiconductor body, and a plurality of gate runners each arranged on top of the semiconductor body and each connected to gate electrodes of at least some of the plurality of transistor cells. Each gate runner of the plurality of gate runners has a longitudinal direction, and at least one of the gate runners includes at least a section in which a resistivity per area increases in the longitudinal direction as a distance to the gate pad along the gate runner increases.Type: GrantFiled: October 16, 2020Date of Patent: August 16, 2022Assignee: INFINEON TECHNOLOGIES AGInventors: Thomas Aichinger, Wolfgang Bergner, Ralf Siemieniec, Frank Wolter