Abstract: A catheter includes a shaft for insertion into an organ of a patient, and an expandable distal-end assembly, which is coupled to the shaft and to an apex of the catheter, and includes multiple splines. In at least a given spline among the multiple splines, at least sixty percent of a length of the given spline is non-insulated and is configured to make contact with tissue of the organ and to apply radiofrequency (RF) pulses to the tissue.

Abstract: A catheter includes a shaft for insertion into an organ of a patient, an expandable distal-end assembly, and one or more electrodes. The expandable distal-end assembly is coupled to the shaft and to an apex of the catheter, and includes multiple splines. In at least a given spline among the multiple splines, at least sixty percent of a length of the given spline is non-insulated and is configured to make contact with tissue of the organ and to apply radiofrequency (RF) pulses to the tissue. The one or more electrodes are coupled to at least one of (i) an insulated section of one or more of the splines, and (ii) the apex, and, when placed in contact with the tissue, the one or more electrodes are configured to sense electrical signals in the tissue.

Abstract: The invention relates to a process for mineral oil production, in which an aqueous saline surfactant formulation comprising a surfactant mixture of at least one anionic surfactant of the general formula R1—O—(CH2C(CH3)HO)x—(CH2CH2O)y—SO3M and at least one anionic surfactant of the general formula R2—O—(CH2CH2O)z—SO3M and a base is injected through injection boreholes into a mineral oil deposit, and crude oil is withdrawn from the deposit through production boreholes. The invention further relates to the surfactant mixture, a concentrate comprising the surfactant mixture and a manufacturing process as well as the use of the surfactant mixture and the con- centrate in the production of mineral oil from underground mineral oil deposits.

Abstract: The present invention relates to a liquid cleaning composition can be a cleaning composition for removing an acrylic-based polymeric material useful as enteric tablet coatings located on a surface of a vessel or other process equipment comprising: —diethylen glycol mono butylether; and —water.

Abstract: The invention relates to a process for mineral oil production, in which an aqueous saline surfactant formulation comprising a surfactant mixture of at least one anionic surfactant of the general formula R1—O—(CH2C(CH3)HO)x, —(CH2CH2O)y—SO3M and at least one amionic surfactant of the general formula R2—O—(CH2CH2O)2—SO3M and a base is injected through injection boreholes into a mineral oil deposit, and crude oil is withdrawn from the deposit through production boreholes. The invention further relates to the surfactant mixture, a concentrate comprising the surfactant mixture and a manufacturing process as well as the use of the surfactant mixture and the con- centrate in the production of mineral oil from underground mineral oil deposits.

Abstract: The present invention relates to a liquid cleaning composition can be a cleaning composition for removing an acrylic-based polymeric material useful as enteric tablet coatings located on a surface of a vessel or other process equipment comprising: —diethylen glycol mono butylether; and —water.

Abstract: The invention relates to a method for producing polycrystalline silicon rods by deposition of silicon on at least one thin rod in a reactor, wherein, before the silicon deposition, hydrogen halide at a temperature of 400-1000° C. is introduced into the reactor containing at least one thin rod and is irradiated by means of UV light, as a result of which halogen and hydrogen radicals arise and the volatile halides that form are removed from the reactor.

Abstract: In the batch production of high purity polycrystalline silicon, in which a U-shaped silicon carrier body is fastened in an open deposition reactor, the deposition reactor is hermetically sealed, the U-shaped carrier body is heated electrical current, a silicon-containing reaction gas and hydrogen are introduced into the reactor through a supply line so that silicon from the reaction gas is deposited on the carrier body, the diameter of the carrier body increases and a waste gas formed is removed from the deposition reactor through a discharge line, and, after a desired diameter of the polysilicon rod is reached, deposition is terminated, the carrier body is cooled to room temperature, the reactor is opened, the carrier body is removed from the reactor and a second U-shaped silicon carrier body made of silicon is fastened in the deposition reactor, an inert gas is fed through the supply and discharge lines into the open reactor from at least the time when the reactor is opened to extract the first carrier body

Abstract: The present invention relates to a method for determining the correlation between the metabolite profiles (MPs) and the expression or potential for expression of a trait of a group of plants, and further to a method for determining or predicting the expression of a trait of a plant by taking advantage of the determined MP of said plant and a determined correlation between the MPs and the expression or potential for the expression of said trait in a group of plants. Particularly, the present invention relates to a method for determining or predicting the biomass production/growth rate of a plant by taking advantage of the determined MP of said plant and a determined correlation between the MPs and the biomass production/growth rate or the potential for biomass production/growth rate of a group of plants.

Abstract: A machine tool for cutting machining of work pieces has a tool spindle and a work piece spindle. The work piece spindle is a hollow spindle having a through hole extending through the spindle and a holding mechanism for holding a work piece at one end. The work piece held in the holding mechanism can be machined through the through hole by means of a machining tool held in the tool spindle.

Abstract: In the batch production of high purity polycrystalline silicon, in which a U-shaped silicon carrier body is fastened in an open deposition reactor, the deposition reactor is hermetically sealed, the U-shaped carrier body is heated electrical current, a silicon-containing reaction gas and hydrogen are introduced into the reactor through a supply line so that silicon from the reaction gas is deposited on the carrier body, the diameter of the carrier body increases and a waste gas formed is removed from the deposition reactor through a discharge line, and, after a desired diameter of the polysilicon rod is reached, deposition is terminated, the carrier body is cooled to room temperature, the reactor is opened, the carrier body is removed from the reactor and a second U-shaped silicon carrier body made of silicon is fastened in the deposition reactor, an inert gas is fed through the supply and discharge lines into the open reactor from at least the time when the reactor is opened to extract the first carrier body

Abstract: A machine tool for cutting machining of work pieces has a tool spindle and a work piece spindle. The work piece spindle is a hollow spindle having a through hole extending through the spindle and a holding mechanism for holding a work piece at one end. The work piece held in the holding mechanism can be machined through the through hole by means of a machining tool held in the tool spindle.

Abstract: A semiconductor wafer with a front surface and a back surface and an epitaxial layer of semiconducting material deposited on the front surface. In the semiconductor wafer, the epitaxial layer has a maximum local flatness value SFQRmax of less than or equal to 0.13 ?m and a maximum density of 0.14 scattered light centers per cm2. The front surface of the semiconductor wafer, prior to the deposition of the epitaxial layer, has a surface roughness of 0.05 to 0.29 nm RMS, measured by AFM on a 1 ?m×1 ?m reference area. Furthermore, there is a process for producing the semiconductor wafer.

Abstract: A silicon semiconductor wafer with a diameter of greater than or equal to 200 mm and a polished front surface and a polished back surface and a maximum local flatness value SFQRmax of less than or equal to 0.13 ?m, based on a surface grid of segments with a size of 26 mm×8 mm on the front surface, wherein the maximum local height deviation P/V(10×10)max of the front surface from an ideal plane is less than or equal to 70 nm, based on sliding subregions with dimensions of 10 mm×10 mm.

Abstract: A process is for material-removing machining, on both sides simultaneously, of semiconductor wafers having a front surface and a back surface, the semiconductor wafers resting in carriers which are set in rotation by means of an annular outer drive ring and an annular inner drive ring and being moved between two oppositely rotating working disks in a manner which can be described by means of in each case one path curve relative to the upper working disk and one path curve relative to the lower working disk, wherein the two path curves after six loops around the center have the appearance of still being open, and at each point have a radius of curvature which is at least as great as the radius of the inner drive ring.

Abstract: A process for producing semiconductor wafers by double-sided polishing between two rotating, upper and lower polishing plates, which are covered with polishing cloth, while an alkaline polishing abrasive with colloidal solid fractions is being supplied, the semiconductor wafers being guided by carriers which have circumferential gear teeth and are set in rotation by complementary outer gear teeth and inner gear teeth of the polishing machine, which is distinguished by the following process steps: (a) at least one of the two sets of gear teeth of the polishing machine is at least from time to time sprayed with a liquid which substantially comprises water, (b) the alkaline polishing abrasive is fed continuously to the semiconductor wafers in a closed supply device. There is also a device which is suitable for carrying out the process.

Abstract: A semiconductor wafer with a front surface and a back surface and an epitaxial layer of semiconducting material deposited on the front surface. In the semiconductor wafer, the epitaxial layer has a maximum local flatness value SFQRmax of less than or equal to 0.13 &mgr;m and a maximum density of 0.14 scattered light centers per cm2. The front surface of the semiconductor wafer, prior to the deposition of the epitaxial layer, has a surface roughness of 0.05 to 0.29 nm RMS, measured by AFM on a 1 &mgr;m×1 &mgr;m reference area. Furthermore, there is a process for producing the semiconductor wafer.

Abstract: A semiconductor wafer has a front surface and a back surface and flatness values based on partial areas of a surface grid on the front surface of the semiconductor wafer, which has a maximum local flatness value SFQRmax of less than or equal to 0.13 &mgr;m and individual SFQR values which in a peripheral area of the semiconductor wafer do not differ significantly from those in a central area of the semiconductor wafer. There is also a process for producing this semiconductor wafer, wherein the starting thickness of the semiconductor wafer is 20 to 200 &mgr;m greater than the thickness of the carrier and the semiconductor wafer is polished until the end thickness of the semiconductor wafer is 2 to 20 &mgr;m greater than the thickness of the carrier.

Abstract: A silicon semiconductor wafer with a diameter of greater than or equal to 200 mm and a polished front surface and a polished back surface and a maximum local flatness value SFQRm-1 of less than or equal to 0.13 &mgr;m, based on a surface grid of segments with a size of 26 mm×8 mm on the front surface, wherein the maximum local height deviation P/V(10×10)m-1 of the front surface from an ideal plane is less than or equal to 70 nm, based on sliding subregions with dimensions of 10 mm×10 mm.

Abstract: A process is for material-removing machining, on both sides simultaneously, of semiconductor wafers having a front surface and a back surface, the semiconductor wafers resting in carriers which are set in rotation by means of an annular outer drive ring and an annular inner drive ring and being moved between two oppositely rotating working disks in a manner which can be described by means of in each case one path curve relative to the upper working disk and one path curve relative to the lower working disk, wherein the two path curves after six loops around the center have the appearance of still being open, and at each point have a radius of curvature which is at least as great as the radius of the inner drive ring.