Patents by Inventor THOMAS ANTHONY MCKENNA

THOMAS ANTHONY MCKENNA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150243494
    Abstract: A method of forming an epitaxial article includes growing a crystal of elemental silicon having a minimum boron doping level of 3.2×1018/cm3 using Czochralski process parameters including a crystal growth velocity (pull speed) [V] which is less than (<) an average axial temperature gradient [G]. The crystal is cut into at least one elemental silicon substrate having a surface aligned to a <111> direction; wherein a ratio of vacancies/interstitials in the silicon substrate is less than (<) 1. At least one epitaxial buffer layer is grown on the surface of the silicon substrate, and at least one epitaxial Group IIIA-N layer is grown on the buffer layer(s).
    Type: Application
    Filed: February 25, 2014
    Publication date: August 27, 2015
    Applicant: Texas Instruments Incorporated
    Inventors: MICHAEL LOUIS HAYDEN, THOMAS ANTHONY MCKENNA, RICK L. WISE, SAMEER PENDHARKAR