Abstract: A semiconductor memory cell includes a set of circuit structures, each having column input/output circuits. The semiconductor memory cell further includes a set of replicas corresponding to the column input/output circuits. The set of replicas are non-functional and fills an empty space next to the column input/output circuits and hence, provides context protection for the column input/output circuits.

Abstract: A semiconductor memory cell includes a set of circuit structures, each having column input/output circuits. The semiconductor memory cell further includes a set of replicas corresponding to the column input/output circuits. The set of replicas are non-functional and fills an empty space next to the column input/output circuits and hence, provides context protection for the column input/output circuits.

Abstract: The present application is directed to methods of forming a phase pattern for an integrated circuit feature described in a design database as having a first target dimension. In one embodiment, the method comprises determining whether forming a phase pattern for the integrated circuit feature described in the design database will result in one or more phase blocks of the same phase type being positioned in relative proximity so as to result in a low contrast condition, selecting a second target dimension that will avoid the low contrast condition if the low contrast condition will result, and forming the phase pattern for an integrated circuit feature having the second target dimension. Systems for forming phase patterns and photomasks comprising the phase patterns of the present application are also disclosed.

Abstract: The present application is directed to methods of forming a photomask pattern for writing a photomask. In one embodiment, a method of the present application comprises providing a first pattern for forming an integrated circuit feature, adjusting the first pattern to form a second pattern that accounts for transition region effects in the first pattern, and correcting the second pattern for proximity effects to form the photomask pattern. Systems for forming photomasks according to methods of the present application are also disclosed.

Abstract: Verifying a process margin for a mask pattern includes receiving the mask pattern for patterning features on a semiconductor wafer. The mask pattern is modified according to a wafer pattern model operable to estimate a wafer pattern resulting from the mask pattern. An intermediate stage model is selected to apply to a portion of the mask pattern, where the intermediate stage model is operable to estimate an intermediate stage of the wafer pattern. A process margin of the portion is verified by selecting a test of the intermediate stage model, and performing the test on the portion to verify the process margin of the portion.

Abstract: Correcting a mask pattern includes accessing the mask pattern segmented into segments. An attribute value is established for each segment, where the attribute value for a segment describes an attribute of the segment. The following is repeated for one or more of the attribute values to generate a corrected mask pattern: selecting segments using one or more attribute values; calculating a current correction value for each of the selected segments with respect to previously selected segments updated according to previously calculated correction values; and updating the selected segments according to the current correction values.

Abstract: A photolithographic trim mask includes a transparent region, an attenuated phase-shift region, and an opaque region. The transparent region substantially transmits received light. The attenuated phase-shift region attenuates and shifts the phase of the received light. The phase-shifted attenuated light patterns a coarse line region of a wafer. The opaque region substantially prevents received light from exposing a fine line region of the wafer.