Abstract: An electronic oscillator being operable to detect millimeter wave and infrared frequency output signals over the range of 1-1000 GHz consists of a semiconductor device having a structure comprised of a first planar doped barrier region separated from a second planar doped barrier region by a superlattice region. Upon the application of a uniform electric field, the first planar doped barrier region operates as a means for injecting electrons into the superlattice region which then traverse to the second planar doped barrier region which operates as means for receiving the electrons. During transit through the superlattice region, the electrons undergo an oscillatory motion thereby making possible the detection of signals whose frequency is a function of the applied voltage and the periodic spacing of the superlattice.