Abstract: Methods for forming data storage media and the media formed thereby are disclosed herein. In one embodiment, the method for forming a data storage media, comprises: injection molding a substrate comprising surface features, wherein said surface features have greater than about 90% of a surface feature replication of an original master; and disposing a data layer over at least one surface of said substrate; wherein said data storage media has an axial displacement peak of less than about 500? under shock or vibration excitation when excited by a 1 G sinusoidal loading.

Abstract: Methods for forming data storage media and the media formed thereby are disclosed herein. In one embodiment, the method for forming a data storage media, comprises: injection molding a substrate comprising surface features, wherein said surface features have greater than about 90% of a surface feature replication of an original master; and disposing a data layer over at least one surface of said substrate; wherein said data storage media has an axial displacement peak of less than about 500? under shock or vibration excitation.

Abstract: Methods for forming data storage media and the media formed thereby are disclosed herein. In one embodiment, the method for forming a data storage media, comprises: injection molding a substrate comprising surface features, wherein said surface features have greater than about 90% of a surface feature replication of an original master; and disposing a data layer over at least one surface of said substrate; wherein said data storage media has an axial displacement peak of less than about 500&mgr; under shock or vibration excitation.

Abstract: Methods for forming data storage media and the media formed thereby are disclosed herein. In one embodiment, the method for forming a data storage media, comprises: injection molding a substrate comprising surface features, wherein said surface features have greater than about 90% of a surface feature replication of an original master; and disposing a data layer over at least one surface of said substrate; wherein said data storage media has an axial displacement peak of less than about 500&mgr; under shock or vibration excitation.

Abstract: In one embodiment, a spin coating process comprises: dispensing a solution of a solution solvent and about 3 to about 30 wt % thermoplastic polymer, based upon the total weight of the solution, wherein the solution solvent has a boiling point at atmospheric pressure of about 110° C. to about 250° C., a polarity index of greater than or equal to about 4.0, a pH of about 5.5 to about 9; spinning the substrate; and removing the solution solvent to produce a coated substrate comprising a coating having less than or equal to 10 asperities over the entire surface of the coated substrate.

Abstract: The data storage media comprises, in a preferred embodiment, a homogenous or non-homogenous plastic substrate that can be formed in situ with the desired surface features disposed thereon on one or both sides, a data storage layer such as a magneto-optic material also on one or both sides, and an optional protective, dielectric, and/or reflective layers. The substrate can have a substantially homogenous, tapered, concave, or convex geometry, with various types and geometries of reinforcement employed to increase stiffness without adversely effecting surface integrity and smoothness.

Abstract: Methods for forming data storage media and the media formed thereby are disclosed herein. In one embodiment, the method for forming a data storage media, comprises: injection molding a substrate comprising surface features, wherein said surface features have greater than about 90% of a surface feature replication of an original master; and disposing a data layer over at least one surface of said substrate; wherein said data storage media has an axial displacement peak of less than about 500&mgr; under shock or vibration excitation.

Abstract: First and second flexible interconnect structures are provided and each includes a flexible interconnect layer and a chip with a surface having chip pads attached to the flexible interconnect layer. Molding material is inserted between the flexible interconnect layers for encapsulating the respective chips. Vias in the flexible interconnect layers are formed to extend to selected chip pads, and a pattern of electrical conductors is applied which extends over the flexible interconnect layers and into the vias to couple selected ones of the chip pads.

Abstract: A protective cap is deposited over the top and sides of an air bridge structure located on an integrated circuit chip. The protective cap provides mechanical strength during the application of a high density interconnect structure over the chips, to prevent deformation of the sensitive (air bridge) structure, and also to prevent any contamination from intruding under the air bridge. More importantly, the protective cap does not impede the performance of the air bridge and therefore does not need to be removed, thereby eliminating the necessity of ablating the HDI structure. Furthermore, the protective cap allows additional area for metallization to provide alternate circuits for coupling, power or ground planes, etc.

Abstract: A method for fabricating an electronic assembly comprises attaching an insulative film to a frame and positioning at least one electronic component having a face with connections pads face down on the insulative film. The insulative film is positioned on a porous sheet supported by a vacuum fixture. The porous sheet and vacuum fixture are adapted so as to be capable of creating vacuum conditions for holding the insulative film with a substantially flat surface on the porous sheet. A vacuum is created within the vacuum chamber for flatly holding the insulative film on the porous sheet. A substrate is applied to the insulative film and the at least one electronic component. In one embodiment the substrate is applied by securing the insulative film in position with a mold form having at least one opening around the electronic component and adding substrate molding material at least partially around the component through the opening.

Abstract: A method for fabricating a multi-chip module substrate comprises providing a carrier having a well. Substrate molding material is poured into the carrier well. A plurality of chips is situated in the substrate molding material. A laminatable dielectric layer is laminated over the substrate molding material at a predetermined temperature and a predetermined pressure so that the substrate molding material flows and encapsulates the chips.

Abstract: A low temperature batch method for forming and positioning permanent magnets on electromagnetically actuated micro-fabricated components, such as electrical switches employs a first adhesive, such as a Siltem/epoxy blend of an epoxy resin and a siloxane polyimide polymer, to releasably attach a mold layer of Kapton polyimide to a substrate, which may be the movable portion of a micromechanical structure, or a precursor to such movable portion. A well-shape cavity is formed in the mold layer, and filled with a slurry of rare earth NdFeB magnetic particles suspended in a second adhesive, which is cured to form the body of a magnet. The second adhesive is an SPI/epoxy blend, also of an epoxy resin and a siloxane polyimide polymer, but with a greater adhesion strength and a higher temperature softening point compared to the Siltem/epoxy blend. The entire structure is heated, and the mold layer is pulled off the substrate, while the body of magnetic material remains firmly attached.

Abstract: A differentiable ablation approach to patterning dielectrics which are not of the same absorbance uses an absorbant dielectric at a specified laser wavelength over a non-absorbant dielectric at that wavelength. The absorbant dielectric may be laser-patterned and become an integral mask enabling plasma etching of the underlying non-absorbant dielectric. If the patterning of the absorbant dielectric involves vias, polymer ridges formed around via surfaces during laser patterning may be removed at the same time the underlying non-absorbant dielectric is etched using a transparent, oxygen plasma resistant mask. Alternatively, an inert mask may be used instead of the absorbant dielectric to allow plasma etching of the non-absorbant dielectric.

Abstract: A plasticized polyetherimide, such as a blend of polyetherimide and a pentaerythritol tetrabenzoate ester, has been found useful as a low temperature laminating adhesive for making high density interconnect circuit arrays.

Abstract: A process and configuration are described which enable the I/O metal fingers of any high density interconnect (HDI) module to be extended over the edge of a substrate at the end of circuit fabrication, thus enabling fabrication of circuits for arrangement in three-dimensional stacks. The module includes a first dielectric layer covering one or more electrical conductors on a substrate. The first dielectric layer is ablated to expose a portion of at least one electrical conductor and a second dielectric layer is then applied over the first dielectric layer and the exposed portion of the electrical conductor except for an extremity of the conductor. A second electrical conductor is subsequently applied and patterned to cover a portion of the second dielectric layer, the extremity of the conductor, and at least a portion of one edge of the substrate.

Abstract: Heat curable dielectric compositions are provided comprising blends of silicone polyimide and epoxy resin and an effective amount of an arylonium salt such as a diaryliodoniumhexafluoroantimonate in combination with a free radical generating aromatic compound as a cocatalyst.

Abstract: A high density interconnect structure incorporating a plurality of laminated dielectric layers is fabricated using a SPI/epoxy crosslinking copolymer blend adhesive in order to maintain the stability of the already fabricated structure during the addition of the later laminations while also maintaining the repairability of the high density interconnect structure.

Abstract: A protective coating of suitable composition and thickness is applied to the inner surface of the arc tube of a high-intensity, metal halide discharge lamp in order to avoid a substantial loss of the metallic component of the metal halide fill and hence a substantial buildup of free halogen, thereby extending the useful life of the lamp. A preferred lamp structure includes a fused silica arc tube with a silicon coating. The silicon coating is preferably applied to the arc tube using a chemical vapor deposition process.

Abstract: Carboxy-terminated prepolymers are prepared by the reaction of a diamine, preferably an aromatic diamine, or a mixture thereof with a triamine, with a carboxy anhydride such as trimellitic anhydride and a dianhydride such as bisphenol A dianhydride. The prepolymers, or functional derivatives thereof, are then reacted with a diisocyanate or diamine, or a mixture thereof with a triisocyanate or triamine, preferably an aromatic diisocyanate, to produce copolyamideimides. The products prepared using triamines or triisocyanates are crosslinked. Other products containing alkyl or alicyclic groups attached to aromatic radicals can be oxidatively crosslinked, e.g., by heating in air.

Abstract: Diaryl and substituted diaryl carbonates are formed by a series of steps, the first step involving the production of a dialkyl carbonate from an alkanol, carbon monoxide and oxygen; and the second step involving the reaction of the dialkyl carbonate with a phenyl ester or substituted phenyl ester in the presence of a dialkyl tin compound to produce a mixture of diaryl carbonate, alkyl aryl carbonate, and an alkyl ester. The alkyl ester can be heated to reform the alkanol and form ketene; in turn the ketene can be reacted with the phenol or substituted phenol to form the phenyl ester or substituted phenyl ester used in the second step above.