Patents by Inventor Thomas Benoist

Thomas Benoist has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Bidirectional semiconductor device for protection against electrostatic discharges, usable on silicon on insulator
    Patent number: 9035349
    Abstract: A device includes, within a layer of silicon on insulator, a central semiconductor zone including a central region having a first type of conductivity, two intermediate regions having a second type of conductivity opposite to that of the first one, respectively disposed on either side of and in contact with the central region in order to form two PN junctions, two semiconductor end zones respectively disposed on either side of the central zone, each end zone comprising two end regions of opposite types of conductivity, in contact with the adjacent intermediate region, the two end regions of each end zone being mutually connected electrically in order to form the two terminals of the device.
    Type: Grant
    Filed: February 15, 2013
    Date of Patent: May 19, 2015
    Assignee: STMicroelectronics, S.A.
    Inventors: Philippe Galy, Nicolas Guitard, Thomas Benoist
  • Triggerable bidirectional semiconductor device
    Patent number: 8937334
    Abstract: A triggerable bidirectional semiconductor device has two terminals and at least one gate. The device comprises, within a layer of silicon on insulator, a central semiconductor zone incorporating the at least one gate and comprising a central region having a first conductivity type, two intermediate regions having a second conductivity type respectively arranged on either side of and in contact with the central region, two semiconductor end zones respectively arranged on either side of the central zone, each end zone comprising two end regions having opposite types of conductivity, in contact with the adjacent intermediate region, the two end regions of each end zone being mutually connected electrically in order to form the two terminals of the device.
    Type: Grant
    Filed: June 14, 2012
    Date of Patent: January 20, 2015
    Assignee: STMicroelectronics SA
    Inventors: Thomas Benoist, Philippe Galy, Johan Bourgeat, Frank Jezequel, Nicolas Guitard
  • Triggerable Bidirectional Semiconductor Device
    Publication number: 20120319204
    Abstract: A triggerable bidirectional semiconductor device has two terminals and at least one gate. The device comprises, within a layer of silicon on insulator, a central semiconductor zone incorporating the at least one gate and comprising a central region having a first conductivity type, two intermediate regions having a second conductivity type respectively arranged on either side of and in contact with the central region, two semiconductor end zones respectively arranged on either side of the central zone, each end zone comprising two end regions having opposite types of conductivity, in contact with the adjacent intermediate region, the two end regions of each end zone being mutually connected electrically in order to form the two terminals of the device.
    Type: Application
    Filed: June 14, 2012
    Publication date: December 20, 2012
    Applicant: STMICROELECTRONICS SA
    Inventors: Thomas Benoist, Philippe Galy, Johan Bourgeat, Frank Jezequel, Nicolas Guitard