Abstract: A radio frequency (RF) device includes first and second electrodes and a polar dielectric made from a material having electrostrictive properties between the first and second electrodes. The polar dielectric and the first and second electrodes collectively form an active device having an operational frequency band. The RF device also includes one or more layers that affect the acoustic properties of the RF device such that the RF device absorbs RF energy at a frequency that is within the operational frequency band, whereby the RF device is an active device because the RF energy is absorbed at a frequency within the operational frequency band.

Abstract: In accordance with the teachings described herein, low loss thin film capacitors and methods of manufacturing the same are provided. A low loss thin-film capacitor structure may include first and second electrodes and a polar dielectric between the first and second electrodes. The polar dielectric and the first and second electrodes collectively form a capacitor having an operational frequency band. The capacitor structure may also include one or more layers that affect the acoustic properties of the thin-film capacitor structure such that the capacitor absorbs RF energy at a frequency that is outside of the operational frequency band. A method of manufacturing a low loss thin-film capacitor may include the steps of fabricating a capacitor structure that includes a polar dielectric material, and modifying the acoustic properties of the capacitor structure such that the polar capacitor absorbs RF energy at a frequency that is outside of the operating frequency band of the capacitor structure.