Patents by Inventor Thomas Bertaud

Thomas Bertaud has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200343094
    Abstract: An electronic device, an electronic module comprising the electronic device and methods for fabricating the same are disclosed. In one example, the electronic device includes a semiconductor substrate and a metal stack disposed on the semiconductor substrate, wherein the metal stack comprises a first layer, wherein the first layer comprises NiSi.
    Type: Application
    Filed: July 10, 2020
    Publication date: October 29, 2020
    Applicant: Infineon Technologies AG
    Inventors: Paul Frank, Gretchen Adema, Thomas Bertaud, Michael Ehmann, Eric Graetz, Kamil Karlovsky, Evelyn Napetschnig, Werner Robl, Tobias Schmidt, Joachim Seifert, Frank Wagner, Stefan Woehlert
  • Patent number: 10741402
    Abstract: An electronic device, an electronic module comprising the electronic device and methods for fabricating the same are disclosed. In one example, the electronic device includes a semiconductor substrate and a metal stack disposed on the semiconductor substrate, wherein the metal stack comprises a first layer, wherein the first layer comprises NiSi.
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: August 11, 2020
    Assignee: Infineon Technologies AG
    Inventors: Paul Frank, Gretchen Adema, Thomas Bertaud, Michael Ehmann, Eric Graetz, Kamil Karlovsky, Evelyn Napetschnig, Werner Robl, Tobias Schmidt, Joachim Seifert, Frank Wagner, Stefan Woehlert
  • Publication number: 20180082848
    Abstract: An electronic device, an electronic module comprising the electronic device and methods for fabricating the same are disclosed. In one example, the electronic device includes a semiconductor substrate and a metal stack disposed on the semiconductor substrate, wherein the metal stack comprises a first layer, wherein the first layer comprises NiSi.
    Type: Application
    Filed: August 31, 2017
    Publication date: March 22, 2018
    Applicant: Infineon Technologies AG
    Inventors: Paul Frank, Gretchen Adema, Thomas Bertaud, Michael Ehmann, Eric Graetz, Kamil Karlovsky, Evelyn Napetschnig, Werner Robl, Tobias Schmidt, Joachim Seifert, Frank Wagner, Stefan Woehlert