Abstract: Device and methods for a wearable medical device are disclosed. The device and methods use an on-board mobile system to alert emergency services when the user is in cardiovascular distress. The device takes advantage of newly miniaturized electrocardiograph, pulse oximetry sensors, mutual reinforcement and anomaly detection algorithms. Electrocardiograph waveforms are recorded digitally for physician review with emphasis on critical events. In the occurrence of a immediate critical-need cardiac event, the system will contact emergency services (EMS) for assistance. The system is a biometric monitoring system that implements key concepts of cardiovascular monitoring through pulse oximetry and electrocardiography (ECG). The system implements key concepts of ECGs and active/capacitive electrodes to produce a wireless network of (individually isolated) ECG nodes that can produce a system ranging from 3 to 16 leads.

Abstract: A system for measuring the ECG of a user by having at least two sensors, all of which are attached to only one peripheral of the user. The system may also comprise a controller for determining ECG signals from the data received from the sensors. The system may be in the form of a wearable band on which the sensors and the controller are disposed. The sensors may be capacitive sensors, electrically coupled capacitive sensors, or electrodes. The sensors may be attached to one arm of a user. The sensors may be disposed on the inside and outside of the arm away from each other at the same axial position on the arm. The sensors may be disposed at axially different positions on the arm, for example, one at the wrist and the other at the shoulder of the user.

Abstract: The invention relates to a belt deflector with a main element (100) that can be attached to the structure of a vehicle, and with a belt support element (200) that is movable relative to the main element (100) and forms a support surface (231) or support edge for a safety belt (20) to be deflected. According to the invention, the belt deflector comprises an intermediate element (300, 400) that is deformed when the movable belt support element (200) is moved relative to the main element (100), in the direction of the intermediate element (300, 400), and because of this deformation is pressed against the safety belt (20).

Abstract: The invention relates to a belt deflector with a main element (100) that can be attached to the structure of a vehicle, and with a belt support element (200) that is movable relative to the main element (100) and forms a support surface (231) or support edge for a safety belt (20) to be deflected. According to the invention, the belt deflector comprises an intermediate element (300, 400) that is deformed when the movable belt support element (200) is moved relative to the main element (100), in the direction of the intermediate element (300, 400), and because of this deformation is pressed against the safety belt (20).

Abstract: A method of manufacturing a semiconductor device includes forming an amorphous silicon layer over a first isolation layer. The method further includes simultaneously forming a gate oxide layer of a transistor device and transforming the amorphous silicon layer into a polycrystalline silicon layer by a thermal oxidation process. Herein a cover oxide layer is formed on the polycrystalline silicon layer.

Abstract: Device and methods for a wearable medical device are disclosed. The device and methods use an on-board mobile system to alert emergency services when the user is in cardiovascular distress. The device takes advantage of newly miniaturized electrocardiograph, pulse oximetry sensors, mutual reinforcement and anomaly detection algorithms. Electrocardiograph waveforms are recorded digitally for physician review with emphasis on critical events. In the occurrence of a immediate critical-need cardiac event, the system will contact emergency services (EMS) for assistance. The system is a biometric monitoring system that implements key concepts of cardiovascular monitoring through pulse oximetry and electrocardiography (ECG). The system implements key concepts of ECGs and active/capacitive electrodes to produce a wireless network of (individually isolated) ECG nodes that can produce a system ranging from 3 to 16 leads.

Abstract: A power semiconductor component includes a power semiconductor partial structure having an insulating layer arranged on an upper side of a semiconductor body. A contact hole arranged on an upper side of the insulating layer proceeds from that side, extending at least partly within the insulating layer. An adhesion promoter layer arranged on an upper side of the power semiconductor partial structure at least partly covers the insulating layer upper side and a surface of the contact hole. A tungsten-comprising layer arranged on the adhesion promoter layer at least partly covers the adhesion promoter layer and has a first thickness in a region of the contact hole and dimensioned such that the tungsten-comprising layer fills the contact hole. The tungsten-comprising layer has a second thickness in the region of the insulating layer upper side which is less than the first thickness. A connection layer is arranged on the tungsten-comprising layer.

Abstract: A method of manufacturing a semiconductor device includes forming an amorphous silicon layer over a first isolation layer. The method further includes simultaneously forming a gate oxide layer of a transistor device and transforming the amorphous silicon layer into a polycrystalline silicon layer by a thermal oxidation process. Herein a cover oxide layer is formed on the polycrystalline silicon layer.

Abstract: A semiconductor device comprises a semiconductor body having a first surface and a second surface opposite to the first surface. The semiconductor device further includes a first isolation layer on the first surface of the semiconductor body and a first electrostatic discharge protection structure on the first isolation layer. The first electrostatic discharge protection structure has a first terminal and a second terminal. A second isolation layer is provided on the electrostatic discharge protection structure. A gate contact area on the second isolation layer is electrically coupled to the first terminal of the first electrostatic discharge protection structure. An electric contact structure is arranged in an overlap area between the gate contact area and the semiconductor body. The electric contact structure is electrically coupled to the second terminal of the first electrostatic discharge protection structure and electrically isolated from the gate contact area.

Abstract: Methods of depositing compound semiconductor materials on one or more substrates include metering and controlling a flow rate of a precursor liquid from a precursor liquid source into a vaporizer. The precursor liquid may comprise at least one of GaCl3, InCl3, and AlCl3 in a liquid state. The precursor liquid may be vaporized within the vaporizer to form a first precursor vapor. The first precursor vapor and a second precursor vapor may be caused to flow into a reaction chamber, and a compound semiconductor material may be deposited on a surface of a substrate within the reaction chamber from the precursor vapors. Deposition systems for performing such methods include devices for metering and/or controlling a flow of a precursor liquid from a liquid source to a vaporizer, while the precursor liquid remains in the liquid state.

Abstract: A layer stack is formed on a main surface of a semiconductor layer, wherein the layer stack includes a dielectric capping layer and a metal layer between the capping layer and the semiconductor layer. Second portions of the layer stack are removed to form gaps between remnant first portions. Adjustment structures of a second dielectric material are formed in the gaps. An interlayer of the first or a third dielectric material is formed that covers the adjustment structures and the first portions. Contact trenches are formed that extend through the interlayer and the capping layer to metal structures formed from remnant portions of the metal layer in the first portions, wherein the capping layer is etched selectively against the auxiliary structures.

Abstract: According to various embodiments, a method for processing a carrier may include: doping a carrier with fluorine such that a first surface region of the carrier is fluorine doped and a second surface region of the carrier is at least one of free from the fluorine doping or less fluorine doped than the first surface region; and oxidizing the carrier to grow a first gate oxide layer from the first surface region of the carrier with a first thickness and simultaneously from the second surface region of the carrier with a second thickness different from the first thickness.

Abstract: The present invention provides improved gas injectors for use with CVD (chemical vapor deposition) systems that thermalize gases prior to injection into a CVD chamber. The provided injectors are configured to increase gas flow times through heated zones and include gas-conducting conduits that lengthen gas residency times in the heated zones. The provided injectors also have outlet ports sized, shaped, and arranged to inject gases in selected flow patterns. The invention also provides CVD systems using the provided thermalizing gas injectors. The present invention has particular application to high-volume manufacturing of GaN substrates.

Abstract: According to various embodiments, a method for processing a carrier may include: doping a carrier with fluorine such that a first surface region of the carrier is fluorine doped and a second surface region of the carrier is at least one of free from the fluorine doping or less fluorine doped than the first surface region; and oxidizing the carrier to grow a first gate oxide layer from the first surface region of the carrier with a first thickness and simultaneously from the second surface region of the carrier with a second thickness different from the first thickness.

Abstract: The invention relates inter alia to a sensor (10), in particular for triggering a vehicle security device (1). According to the invention the sensor (10) comprises a support element (40) and a housing part (70), which holds the support element (40), and the housing part (70) consists of a softer material than the support element (40).

Abstract: Embodiments of the invention include methods for forming Group III-nitride semiconductor structure using a halide vapor phase epitaxy (HVPE) process. The methods include forming a continuous Group III-nitride nucleation layer on a surface of a non-native growth substrate, the continuous Group III-nitride nucleation layer concealing the upper surface of the non-native growth substrate. Forming the continuous Group III-nitride nucleation layer may include forming a Group III-nitride layer and thermally treating said Group III-nitride layer. Methods may further include forming a further Group III-nitride layer upon the continuous Group III-nitride nucleation layer.

Abstract: Deposition systems include a reaction chamber, and a substrate support structure disposed at least partially within the reaction chamber. The systems further include at least one gas injection device and at least one vacuum device, which together are used to flow process gases through the reaction chamber. The systems also include at least one access gate through which a workpiece substrate may be loaded into the reaction chamber and unloaded out from the reaction chamber. The at least one access gate is located remote from the gas injection device. Methods of depositing semiconductor material may be performed using such deposition systems. Methods of fabricating such deposition systems may include coupling an access gate to a reaction chamber at a location remote from a gas injection device.

Abstract: According to various embodiments, a method for processing a carrier may include: doping a carrier with fluorine such that a first surface region of the carrier is fluorine doped and a second surface region of the carrier is at least one of free from the fluorine doping or less fluorine doped than the first surface region; and oxidizing the carrier to grow a first gate oxide layer from the first surface region of the carrier with a first thickness and simultaneously from the second surface region of the carrier with a second thickness different from the first thickness.

Abstract: According to various embodiments, a method for processing a carrier may include: doping a carrier with fluorine such that a first surface region of the carrier is fluorine doped and a second surface region of the carrier is at least one of free from the fluorine doping or less fluorine doped than the first surface region; and oxidizing the carrier to grow a first gate oxide layer from the first surface region of the carrier with a first thickness and simultaneously from the second surface region of the carrier with a second thickness different from the first thickness.

Abstract: A vertical axis wind turbine system is provided that converts wind energy into electrical or mechanical energy. The turbine comprises at least one turbine rotor with a plurality of curved blades for receiving head-on wind generated airflow. Shield means mountable around at least a portion of the rotor serve to protect the upstream-moving blades from head-on wind airflow and thereby reduce drag. In one embodiment, load compensation means are provided to adjust the moment of inertia of the turbine rotor. One or more of the turbine rotor blades is hollow and defines a closed volume for holding a fluid, the fluid being displaceable in use through baffle means towards or away from the vertical axis of the rotor as the rotational velocity of the rotor changes.