Abstract: A method of magnetizing a permanently magnetizable element associated with a magnetic field sensor structure includes generating a test magnetic field penetrating the magnetic field sensor structure and the permanently magnetizable element, detecting the magnetic field and providing a test signal based on a magnetic field through the magnetic field sensor structure, aligning the test magnetic field and the magnetic field sensor structure with the permanently magnetizable element to each other, until the test signal reaches a set value corresponding to a predetermined magnetized field distribution with respect to the magnetic field sensor structure, and generating a magnetizing field for permanently magnetizing the element to be permanently magnetized, wherein the magnetizing field corresponds to the predetermined magnetic field distribution within a tolerance range.

Abstract: The invention relates to a micromechanical sensor and to a corresponding production method that includes the following steps: a) preparing a doped semiconductor wafer; b) applying an epitaxial layer that is doped in such a way that a jump in the charge carrier density in the interface between the semiconductor wafer and the epitaxial layer occurs; c) optionally etching ventilation holes traversing the epitaxial layer and optionally filling the ventilation holes with a sacrificial material; d) depositing at least one sacrificial layer, at least one spacing layer, a membrane and optionally a semiconductor circuit on the top side of the epitaxial layer using a technology known per se, wherein the semiconductor circuit may be applied after the membrane is formed or while depositing the layers required to form the membrane; e) etching a hole on the back part of the sensor, wherein the etching method is selected in such a way that etching advances in the direction of the top side and ceases in the interference betw

Abstract: A micromechanical sensor integrated on a chip, includes a semiconductor substrate, an electronic circuit, a void, a diaphragm, a counterelectrode and valve openings connecting a volume of the void to its surroundings. The valve openings are directed toward an upper surface of the wafer, and the counterelectrode is a component part of a coating plane that extends over the entire chip surface, so that the electronic semiconductor circuit can be applied to the coating plane by known semiconductor technology. A method for producing the micromechanical sensor as well as a microphone or a pressure sensor having the micromechanical sensor, are also provided.

Abstract: The invention relates to a micromechanical sensor and to a corresponding production method that includes the following steps: a) preparing a doped semiconductor wafer ; b) applying an epitaxial layer that is doped in such a way that a jump in the charge carrier density in the interface between the semiconductor wafer and the epitaxial layer occurs; c) optionally etching ventilation holes traversing the epitaxial layer and optionally filling the ventilation holes with a sacrificial material; d) depositing at least one sacrificial layer, at least one spacing layer, a membrane and optionally a semiconductor circuit on the top side of the epitaxial layer using a technology known per se, wherein the semiconductor circuit may be applied after the membrane is formed or while depositing the layers required to form the membrane; e) etching a hole on the back part of the sensor, wherein the etching method is selected in such a way that etching advances in the direction of the top side and ceases in the interference bet

Abstract: The invention relates to a semiconductor sensor having a base element (4) and at least one deformation element (8). The deformation element (8) is composed of a semiconductor substrate that is doped with a dopant of a first conductivity type. Piezoresistors (14) that are doped with a dopant of the opposite conductivity type are located in the deformation element (8). The deformation element (8) has at least one part that is in contact with a medium. The semiconductor sensor is characterized in that the part has a lower concentration of the dopant than a further region located between it and the piezoresistor (14).