Abstract: The invention relates to a dental model (1) for dental-technical modeling having a model base (2) and having a tooth stump (4) that can be removed from the model base (2), the model base (2) having a receiving cavity (3) for receiving the tooth stump (4), the tooth stump (4) having a preparation section (5), the preparation section (5) being designed for the prosthetic reconstruction of a tooth and the shaft (6) being designed for insertion along an insertion direction into the receiving cavity (3), the model base (2) and/or the shaft (6) having an elastic positioning element for positioning the tooth stump (4) relative to the model base (2).

Abstract: An RF switch circuit for switching RF signals includes a first terminal and a second terminal and a series connection of a plurality of transistors between the first terminal of the RF switch circuit and the second terminal of the RF switch circuit. Furthermore, the RF switch circuit includes a control circuit configured to conductively couple, in a high impedance state of the RF switch circuit, the first terminal of the RF switch circuit to a control terminal of a first transistor in a series of the series connection of the plurality of transistors. The second terminal of the RF switch circuit is conductively coupled to a control terminal of a last transistor in the series of the series connection of the plurality of transistors.

Abstract: An RF switch circuit for switching RF signals includes a first terminal and a second terminal and a series connection of a plurality of transistors between the first terminal of the RF switch circuit and the second terminal of the RF switch circuit. Furthermore, the RF switch circuit includes a control circuit configured to conductively couple, in a high impedance state of the RF switch circuit, the first terminal of the RF switch circuit to a control terminal of a first transistor in a series of the series connection of the plurality of transistors. The second terminal of the RF switch circuit is conductively coupled to a control terminal of a last transistor in the series of the series connection of the plurality of transistors.

Abstract: An RF switch circuit for switching RF signals includes a first terminal and a second terminal and a series connection of a plurality of transistors between the first terminal of the RF switch circuit and the second terminal of the RF switch circuit. Furthermore, the RF switch circuit includes a control circuit configured to conductively couple, in a high impedance state of the RF switch circuit, the first terminal of the RF switch circuit to a control terminal of a first transistor in a series of the series connection of the plurality of transistors. The second terminal of the RF switch circuit is conductively coupled to a control terminal of a last transistor in the series of the series connection of the plurality of transistors.

Abstract: An RF switch circuit for switching RF signals includes a first terminal and a second terminal and a series connection of a plurality of transistors between the first terminal of the RF switch circuit and the second terminal of the RF switch circuit. Furthermore, the RF switch circuit includes a control circuit configured to conductively couple, in a high impedance state of the RF switch circuit, the first terminal of the RF switch circuit to a control terminal of a first transistor in a series of the series connection of the plurality of transistors. The second terminal of the RF switch circuit is conductively coupled to a control terminal of a last transistor in the series of the series connection of the plurality of transistors.

Abstract: An integrated circuit arrangement and fabrication method is provided. The integrated circuit arrangement contains an NPN transistor and a PNP transistor. The PNP transistor contains an emitter connection region and a cutout. The cutout delimits the width of the emitter connection region. The electrically conductive material of the connection region laterally overlaps the cutout.

Abstract: An integrated circuit arrangement and fabrication method is provided. The integrated circuit arrangement contains an NPN transistor and a PNP transistor. The PNP transistor contains an emitter connection region and a cutout. The cutout delimits the width of the emitter connection region. The electrically conductive material of the connection region laterally overlaps the cutout.

Abstract: An explanation is given of, inter alia, an integrated circuit arrangement (100) containing an npn transistor (102) and a pnp transistor (104). Transistors with outstanding electrical properties are produced if the pnp transistor contains a cutout (142) for an edge terminal region (120) and if the edge terminal region (120) has a part near the substrate which is arranged in the cutout (142) and a part remote from the substrate which is arranged outside the cutout (142) and overlaps the base terminal region (139).