Abstract: This invention is directed to an improvement in a wet chemical process for producing electronic precursors. In such process a silicon surface is treated with a wet chemical and the wet chemical subsequently removed therefrom by contact with a drying vapor. In this case, the improvement in the process comprises: employing a drying vapor comprised of isopropanol; and, maintaining the isopropanol employed in said drying vapor at a temperature below about 80° F. prior to forming said drying vapor. Preferably the isopropanol is maintained free from exposure to light from the time of manufacture to the time of use.

Abstract: An aqueous composition comprising ammonium hydroxide in an amount of about 1 to about 30% by weight calculated as NH3 and a surface active agent represented by the formula XF2C(CFY)nSO3A wherein X=F, OH or SO3A; Y=F, H, OH or may be omitted thereby creating a double bond; n=1-12; A=NH4+, H+, Na+, K+, Li+, R+ or organic amine cation and R is 1-4 straight chain alkyl group; and wherein the fluoroalkyl group is a linear group; and wherein the surface active agent is present in an amount of about 5 ppm to about 2000 ppm is useful for cleaning photomasks and especially chromium photomasks.