Abstract: A differential pressure sensor assembly includes a transducer having a first sensing surface and a second sensing surface. The second sensing surface is contained in a cavity. An Integrated Circuit (IC) is hermetically coupled to the transducer. The IC has a first aperture aligned to the cavity. A lead frame is coupled to the IC. The lead frame has a second aperture aligned to the first aperture of the IC. A package encapsulates the transducer, the IC and the lead frame. The package has a third aperture exposed to the first sensing surface. The package includes a molding compound providing a hermetic seal between the third aperture of the package and the first aperture of the IC. The molding compound is separated from the transducer by an encroachment distance.

Abstract: A semiconductor die is electrically connected to the leads of a flagless lead frame and is fully encapsulated by encapsulant to form a semiconductor package. A method of manufacturing the semiconductor package entails encapsulating a flagless lead frame with a first encapsulant such that a top surface of the leads of the flagless lead frame are exposed from the first encapsulant. A semiconductor die is mounted directly to the first encapsulant located in a central region of the lead frame. Electrically conductive interconnects are formed between die pads on the semiconductor die and the top surface of respective leads of the lead frame. The semiconductor die, conductive interconnects, and top surface of the leads is encapsulated with a second encapsulant so that the semiconductor die is sandwiched between the first and second encapsulants, thus isolating the semiconductor die from package stresses.

Abstract: A packaged semiconductor device includes a first semiconductor die including interconnect pads and a seal ring pad surrounding at least some of the interconnect pads, a first portion of an plated seal ring structure formed on the seal ring pad, and a second semiconductor die including a second portion of the plated seal ring structure formed on a major surface of the second semiconductor die. The second portion of the plated seal ring structure is coupled to the first portion of the plated seal ring structure to form a seal around a cavity between the first and second semiconductor die. A plurality of interconnect pillars are on the first major surface of the second semiconductor die. The interconnect pillars are coupled to the interconnect pads on the second semiconductor die.

Abstract: A differential pressure sensor assembly includes a transducer having a first sensing surface and a second sensing surface. The second sensing surface is contained in a cavity. An Integrated Circuit (IC) is hermetically coupled to the transducer. The IC has a first aperture aligned to the cavity. A lead frame is coupled to the IC. The lead frame has a second aperture aligned to the first aperture of the IC. A package encapsulates the transducer, the IC and the lead frame. The package has a third aperture exposed to the first sensing surface. The package includes a molding compound providing a hermetic seal between the third aperture of the package and the first aperture of the IC. The molding compound is separated from the transducer by an encroachment distance.