Abstract: A composition and method for removing contaminants from metal surfaces is disclosed. The composition comprises 30 to 70 percent by weight of a terpene-based component, 5 to 40 percent by weight of a C.sub.4 -C.sub.10 ester of lactic acid or derivative thereof, and 1 to 20 percent by weight of a surfactant.

Abstract: A composition and method for decontaminating a surface with the composition is disclosed. The composition comprises from 30 to 70 percent by weight of a terpene-based component, 1 to 15 percent by weight of an amine, 1 to 20 percent by weight of a surfactant, and 5 to 50 percent by weight of an alpha olefin sulfonate or alkoxy sulfate.

Abstract: A composition and method for decontaminating a surface is disclosed. Specifically, the composition comprises 20 to 50 percent by weight of a terpene-based component, 20 to about 40 percent by weight of an alkyl pyrrolidone, and 5 to about 40 percent by weight of a surfactant.

Abstract: A composition and method for decontaminating a surface is disclosed. Specifically, the composition comprises 20 to 50 percent by weight of a terpene-based component, 20 to about 40 percent by weight of an alkyl pyrrolidone, and 5 to about 40 percent by weight of a surfactant.

Abstract: The resistance to radiation damage of metal-oxide-semiconductor devices is improved by the incorporation of fluorine into the gate oxide of the device by robust procedures. The introduction of fluorine into the oxide results in a significant reduction of radiation-induced interface state density. Three methods by which the fluorine is introduced into the gate oxide are: (1) silicidation of the polysilicon gate by chemical vapor deposition using tungsten hexafluoride as a source gas; (2) ion implantation of fluorine into the polysilicon layer on top of the gate oxide, followed by a high temperature anneal to allow the fluorine to migrate into the oxide; and (3) growth of the oxide in a dilute NF.sub.3 ambient.