Patents by Inventor Thomas CABOUT
Thomas CABOUT has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230378311Abstract: A method of manufacturing a PN junction includes successive steps for: forming at least one trench in a semiconductor substrate of a first conductivity type; and filling the at least one trench with a semiconductor material of a second conductivity type, different from the first conductivity type.Type: ApplicationFiled: May 15, 2023Publication date: November 23, 2023Applicants: STMicroelectronics (Rousset) SAS, STMicroelectronics (Crolles 2) SASInventors: Guillaume GUIRLEO, Abderrezak MARZAKI, Thomas CABOUT
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Publication number: 20220131005Abstract: An integrated circuit includes a semiconductor substrate having a first type of conductivity and a semiconductor component. The semiconductor component includes: a buried semiconductor region having a second type of conductivity opposite to the first type of conductivity; a first gate region and a second gate region each extending in depth from a front face of the semiconductor substrate to the buried semiconductor region; a third gate region extending in depth from the front face of the semiconductor substrate and being electrically connected to the buried semiconductor region; and an active area delimited by the first gate region, the second gate region and the buried semiconductor region.Type: ApplicationFiled: October 19, 2021Publication date: April 28, 2022Applicant: STMicroelectronics (Crolles 2) SASInventors: Benoit FROMENT, Thomas CABOUT
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Patent number: 11139303Abstract: A capacitive element includes a trench extending vertically into a well from a first side. The trench is filled with a conductive central section clad with an insulating cladding. The capacitive element further includes a first conductive layer covering a first insulating layer that is located on the first side and a second conductive layer covering a second insulating layer that is located on the first conductive layer. The conductive central section and the first conductive layer are electrically connected to form a first electrode of the capacitive element. The second conductive layer and the well are electrically connected to form a second electrode of the capacitive element. The insulating cladding, the first insulating layer and the second insulating layer form a dielectric region of the capacitive element.Type: GrantFiled: September 21, 2020Date of Patent: October 5, 2021Assignees: STMicroelectronics (Rousset) SAS, STMicroelectronics (Grolles 2) SASInventors: Abderrezak Marzaki, Arnaud Regnier, Stephan Niel, Quentin Hubert, Thomas Cabout
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Patent number: 11081488Abstract: A capacitive element includes a trench extending vertically into a well from a first side. The trench is filled with a conductive central section clad with an insulating cladding. The capacitive element further includes a first conductive layer covering a first insulating layer that is located on the first side and a second conductive layer covering a second insulating layer that is located on the first conductive layer. The conductive central section and the first conductive layer are electrically connected to form a first electrode of the capacitive element. The second conductive layer and the well are electrically connected to form a second electrode of the capacitive element. The insulating cladding, the first insulating layer and the second insulating layer form a dielectric region of the capacitive element.Type: GrantFiled: September 21, 2020Date of Patent: August 3, 2021Assignees: STMicroelectronics (Rousset) SAS, STMicroelectronics (Crolles 2) SASInventors: Abderrezak Marzaki, Arnaud Regnier, Stephan Niel, Quentin Hubert, Thomas Cabout
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Publication number: 20210005612Abstract: A capacitive element includes a trench extending vertically into a well from a first side. The trench is filled with a conductive central section clad with an insulating cladding. The capacitive element further includes a first conductive layer covering a first insulating layer that is located on the first side and a second conductive layer covering a second insulating layer that is located on the first conductive layer. The conductive central section and the first conductive layer are electrically connected to form a first electrode of the capacitive element. The second conductive layer and the well are electrically connected to form a second electrode of the capacitive element. The insulating cladding, the first insulating layer and the second insulating layer form a dielectric region of the capacitive element.Type: ApplicationFiled: September 21, 2020Publication date: January 7, 2021Applicants: STMicroelectronics (Rousset) SAS, STMicroelectronics (Crolles 2) SASInventors: Abderrezak MARZAKI, Arnaud REGNIER, Stephan NIEL, Quentin HUBERT, Thomas CABOUT
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Publication number: 20210005613Abstract: A capacitive element includes a trench extending vertically into a well from a first side. The trench is filled with a conductive central section clad with an insulating cladding. The capacitive element further includes a first conductive layer covering a first insulating layer that is located on the first side and a second conductive layer covering a second insulating layer that is located on the first conductive layer. The conductive central section and the first conductive layer are electrically connected to form a first electrode of the capacitive element. The second conductive layer and the well are electrically connected to form a second electrode of the capacitive element. The insulating cladding, the first insulating layer and the second insulating layer form a dielectric region of the capacitive element.Type: ApplicationFiled: September 21, 2020Publication date: January 7, 2021Applicants: STMicroelectronics (Rousset) SAS, STMicroelectronics (Crolles 2) SASInventors: Abderrezak MARZAKI, Arnaud REGNIER, Stephan NIEL, Quentin HUBERT, Thomas CABOUT
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Patent number: 10818669Abstract: A capacitive element includes a trench extending vertically into a well from a first side. The trench is filled with a conductive central section clad with an insulating cladding. The capacitive element further includes a first conductive layer covering a first insulating layer that is located on the first side and a second conductive layer covering a second insulating layer that is located on the first conductive layer. The conductive central section and the first conductive layer are electrically connected to form a first electrode of the capacitive element. The second conductive layer and the well are electrically connected to form a second electrode of the capacitive element. The insulating cladding, the first insulating layer and the second insulating layer form a dielectric region of the capacitive element.Type: GrantFiled: August 24, 2018Date of Patent: October 27, 2020Assignees: STMicroelectronics (Rousset) SAS, STMicroelectronics (Crolles 2) SASInventors: Abderrezak Marzaki, Arnaud Regnier, Stephan Niel, Quentin Hubert, Thomas Cabout
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Publication number: 20190067291Abstract: A capacitive element includes a trench extending vertically into a well from a first side. The trench is filled with a conductive central section clad with an insulating cladding. The capacitive element further includes a first conductive layer covering a first insulating layer that is located on the first side and a second conductive layer covering a second insulating layer that is located on the first conductive layer. The conductive central section and the first conductive layer are electrically connected to form a first electrode of the capacitive element. The second conductive layer and the well are electrically connected to form a second electrode of the capacitive element. The insulating cladding, the first insulating layer and the second insulating layer form a dielectric region of the capacitive element.Type: ApplicationFiled: August 24, 2018Publication date: February 28, 2019Applicants: STMicroelectronics (Rousset) SAS, STMicroelectronics (Crolles 2) SASInventors: Abderrezak MARZAKI, Arnaud REGNIER, Stephan NIEL, Quentin HUBERT, Thomas CABOUT
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Patent number: 9263129Abstract: A method for determining programming parameters for programming a resistive random access memory switching from an OFF state to an ON state, the method including determining retention curves representing the increase in the ON state resistance as a function of time, for a given programming temperature and a given current limitation; determining a retention failure time for each of the retention curves; determining curves representing the decrease in the retention failure time as a function of the programming temperature, for a given current limitation; for at least one given programming temperature, determining, from the curves representing the decrease in the retention failure time, a current limiting value to be applied to the resistive random access memory in order to obtain a target retention failure time.Type: GrantFiled: May 15, 2015Date of Patent: February 16, 2016Assignee: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVESInventors: Thomas Cabout, Elisa Vianello
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Publication number: 20150332764Abstract: A method for determining programming parameters for programming a resistive random access memory switching from an OFF state to an ON state, the method including determining retention curves representing the increase in the ON state resistance as a function of time, for a given programming temperature and a given current limitation; determining a retention failure time for each of the retention curves; determining curves representing the decrease in the retention failure time as a function of the programming temperature, for a given current limitation; for at least one given programming temperature, determining, from the curves representing the decrease in the retention failure time, a current limiting value to be applied to the resistive random access memory in order to obtain a target retention failure time.Type: ApplicationFiled: May 15, 2015Publication date: November 19, 2015Inventors: Thomas CABOUT, Elisa VIANELLO