Patents by Inventor Thomas Cardolaccia

Thomas Cardolaccia has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11829069
    Abstract: New photoresist and topcoat compositions are provided that are useful in a variety of applications. In one aspect, new photoresist compositions are provided that comprise: (a) a first matrix polymer; (b) one or more acid generators; and (c) one or more additive compounds of Formulae (I) and/or (II).
    Type: Grant
    Filed: December 31, 2018
    Date of Patent: November 28, 2023
    Assignee: ROHM AND HAAS ELECTRONIC MATERIALS LLC
    Inventors: Joshua Kaitz, Tomas Marangoni, Emad Aqad, Amy M. Kwok, Mingqi Li, Thomas Cardolaccia, Choong-Bong Lee, Ke Yang, Cong Liu
  • Patent number: 11809077
    Abstract: A photoresist composition comprises a first polymer formed by free radical polymerization. The first polymer comprises polymerized units formed from a monomer that comprises an ethylenically unsaturated double bond and an acid-labile group; a photoacid generator; a quencher of formula (1): and a solvent.
    Type: Grant
    Filed: March 11, 2021
    Date of Patent: November 7, 2023
    Assignee: ROHM AND HAAS ELECTRONIC MATERIALS LLC
    Inventors: Thomas Cardolaccia, Jason A. DeSisto, Choong-Bong Lee, Mingqi Li, Tomas Marangoni, Chunyi Wu, Cong Liu, Gregory P. Prokopowicz
  • Publication number: 20220043342
    Abstract: Disclosed herein is a photoresist composition, comprising a first polymer formed by free radical polymerization, the first polymer comprising polymerized units formed from a monomer comprising an ethylenically unsaturated double bond and an acid-labile group; a photoacid generator; a quencher of formula (1): wherein: R1 is independently a hydrogen atom, C1-C20 linear, C3-C20 branched, or C3-20 cyclic alkyl, the alkyl optionally comprising an —O— group other than at an alpha-position with respect to the amide C(O), or C6-C20 aryl; R2 is independently a hydrogen atom, C1-C20 linear, C3-C20 branched, or C3-C20 cyclic alkyl, or C6-C20 aryl; L is C1-C20 linear or C3-C20 branched alkylene comprising one or more heteroatom-containing groups independently selected from —O—, —S—, or —N(R3)—, wherein R3 is selected from a hydrogen atom or C1-C20 linear or C3-C20 branched or cyclic alkyl; each of R1, R2, and L may independently be substituted or unsubstituted; wherein the quencher is free of crosslinkable groups;
    Type: Application
    Filed: March 11, 2021
    Publication date: February 10, 2022
    Inventors: Thomas Cardolaccia, Jason A. DeSisto, Choong-Bong Lee, Mingqi Li, Tomas Marangoni, Chunyi Wu, Cong Liu, Gregory P. Prokopowicz
  • Publication number: 20190204743
    Abstract: New photoresist and topcoat compositions are provided that are useful in a variety of applications. In one aspect, new photoresist compositions are provided that comprise: (a) a first matrix polymer; (b) one or more acid generators; and (c) one or more additive compounds of Formulae (I) and/or (II).
    Type: Application
    Filed: December 31, 2018
    Publication date: July 4, 2019
    Inventors: Joshua Kaitz, Tomas Marangoni, Emad Aqad, Amy M. Kwok, Mingqi Li, Thomas Cardolaccia, Choong-Bong Lee, Ke Yang, Cong Liu
  • Patent number: 9482948
    Abstract: Provided are photoresist compositions useful in forming photolithographic patterns by a negative tone development process. Also provided are methods of forming photolithographic patterns by a negative tone development process and substrates coated with the photoresist compositions. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
    Type: Grant
    Filed: October 22, 2015
    Date of Patent: November 1, 2016
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Young Cheol Bae, Deyan Wang, Thomas Cardolaccia, Seokho Kang, Rosemary Bell
  • Publication number: 20160109800
    Abstract: Provided are photoresist compositions useful in forming photolithographic patterns by a negative tone development process. Also provided are methods of forming photolithographic patterns by a negative tone development process and substrates coated with the photoresist compositions. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
    Type: Application
    Filed: October 22, 2015
    Publication date: April 21, 2016
    Inventors: Young Cheol BAE, Deyan WANG, Thomas CARDOLACCIA, Seokho KANG, Rosemary BELL
  • Patent number: 9188864
    Abstract: Provided are photoresist compositions useful in forming photolithographic patterns by a negative tone development process. Also provided are methods of forming photolithographic patterns by a negative tone development process and substrates coated with the photoresist compositions. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
    Type: Grant
    Filed: May 31, 2011
    Date of Patent: November 17, 2015
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Young Cheol Bae, Deyan Wang, Thomas Cardolaccia, Seokho Kang, Rosemary Bell
  • Patent number: 8975001
    Abstract: Provided are photoresist compositions useful in forming photolithographic patterns. Also provided are substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
    Type: Grant
    Filed: February 28, 2012
    Date of Patent: March 10, 2015
    Assignee: Rohm and Haas Electronics Materials LLC
    Inventors: Young Cheol Bae, Rosemary Bell, Thomas Cardolaccia, Seung-Hyun Lee, Yi Liu, Jong Keun Park
  • Patent number: 8614050
    Abstract: Polymers include a unit comprising a particular acetal moiety and a unit comprising a lactone moiety, photoresist compositions containing such a polymer, substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The polymers, compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
    Type: Grant
    Filed: December 31, 2011
    Date of Patent: December 24, 2013
    Assignees: Rohm and Haas Electronic Materials LLC, Dow Global Technologies LLC
    Inventors: Young Cheol Bae, Thomas H. Peterson, Yi Liu, Jong Keun Park, Seung-Hyun Lee, Thomas Cardolaccia
  • Patent number: 8609891
    Abstract: New photoacid generator compounds are provided that comprise a nitrogen-base functional component of the structure —C(?O)N<. Photoresist compositions also are provided that comprise one or more PAGs of the invention.
    Type: Grant
    Filed: April 27, 2011
    Date of Patent: December 17, 2013
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Young Cheol Bae, Thomas Cardolaccia, Yi Liu
  • Patent number: 8507185
    Abstract: Methods of forming electronic devices are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.
    Type: Grant
    Filed: June 28, 2010
    Date of Patent: August 13, 2013
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Young Cheol Bae, Thomas Cardolaccia, Yi Liu
  • Patent number: 8492068
    Abstract: Methods of forming electronic devices are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.
    Type: Grant
    Filed: June 28, 2010
    Date of Patent: July 23, 2013
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Young Cheol Bae, Thomas Cardolaccia, Yi Liu
  • Patent number: 8492075
    Abstract: Methods of forming electronic devices are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.
    Type: Grant
    Filed: June 28, 2010
    Date of Patent: July 23, 2013
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Young Cheol Bae, Thomas Cardolaccia, Yi Liu
  • Patent number: 8465901
    Abstract: Methods of adjusting dimensions of resist patterns are provided. The methods allow for control of photoresist pattern dimensions and find particular applicability in resist pattern rework in semiconductor device manufacturing.
    Type: Grant
    Filed: June 28, 2010
    Date of Patent: June 18, 2013
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Young Cheol Bae, Thomas Cardolaccia, Yi Liu
  • Patent number: 8431329
    Abstract: Self-aligned spacer multiple patterning method are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.
    Type: Grant
    Filed: June 28, 2010
    Date of Patent: April 30, 2013
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Young Cheol Bae, Thomas Cardolaccia, Yi Liu
  • Publication number: 20130069246
    Abstract: Methods of forming electronic devices are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.
    Type: Application
    Filed: September 15, 2012
    Publication date: March 21, 2013
    Applicant: Rohm and Haas Electronic Materials LLC
    Inventors: Young Cheol BAE, Thomas Cardolaccia, Yi Liu
  • Patent number: 8394571
    Abstract: Methods of forming electronic devices are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.
    Type: Grant
    Filed: June 28, 2010
    Date of Patent: March 12, 2013
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Young Cheol Bae, Thomas Cardolaccia, Yi Liu
  • Patent number: 8338079
    Abstract: Compositions are provided which can be used for treating photoresist patterns in the manufacture of electronic devices. The compositions allow for the formation of fine lithographic patterns and find particular applicability in semiconductor device manufacture.
    Type: Grant
    Filed: June 28, 2010
    Date of Patent: December 25, 2012
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Young Cheol Bae, Thomas Cardolaccia, Yi Liu
  • Patent number: 8338083
    Abstract: Methods of forming electronic devices are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.
    Type: Grant
    Filed: June 28, 2010
    Date of Patent: December 25, 2012
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Young Cheol Bae, Thomas Cardolaccia, Yi Liu
  • Publication number: 20120219901
    Abstract: Provided are photoresist compositions useful in forming photolithographic patterns. Also provided are substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
    Type: Application
    Filed: February 28, 2012
    Publication date: August 30, 2012
    Applicant: Rohm and Haas Electronic Materials LLC
    Inventors: Young Cheol BAE, Rosemary BELL, Thomas CARDOLACCIA, Seung-Hyun LEE, Yi LIU, Jong Keun PARK