Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly gasochromic LEDs are disclosed. Gasochromic LEDs are configured to change characteristics, such as color, wavelength, and/or overall brightness of aggregate emissions, upon detection of one or more targeted gases. An exemplary LED package includes an LED chip, a lumiphoric material, and a gasochromic layer. During normal operation, aggregate emissions from the LED package include light contributions from both the LED chip and the lumiphoric material by way of wavelength conversion. When a target gas is detected by the gasochromic layer, an optical characteristic of the gasochromic layer is changed so that contributions from the lumiphoric material in aggregate emissions are reduced. This reduction provides visual detection and/or identification of exposure to one or more targeted gases.

Abstract: Light-emitting diode (LED) devices and more particularly integrated thermal throttling in LED chips and LED packages are disclosed. Thermal throttling devices are integrated as part of electrically conductive pathways within LED chips and/or within LED packages. When temperature conditions rise above certain thresholds, integrated thermal throttling devices reduce and/or halt current flow, thereby avoiding overheating of LED chips and LED packages. Thermal throttling devices may be positioned proximate anode and/or cathode pads at a chip-level and/or proximate anode and/or cathode connections at a package-level. With such integration, LED chips and LED packages may exhibit self-protection against excess temperature operating conditions.

Abstract: Light-emitting diode (LED) packages, and more particularly arrangements of multiple LED chips in LED packages are disclosed. Arrangements include different types, different dimensions, and/or different orientations of LED chips within LED packages and corresponding electrical connections. Further arrangements include individual cover structures having different dimensions for various LED chips to accommodate thickness variations of LED chips and/or thickness variations attributed to different elements of individual cover structures. Different cover structure elements may include lumiphoric materials, antireflective layers, filter layers, and polarization layers. By accounting for dimensional variations between LED chips and/or between cover structures within multiple-chip LED packages, aggregate light-emitting surfaces may be provided with improved emission uniformity.

Abstract: Light-emitting devices and more particularly contact structures for submounts in light-emitting diode (LED) devices are disclosed. Exemplary devices include LED chips with active LED structures bonded to carrier submounts. Contact structures include arrangements of mounting pads of carrier submounts relative to contacts of active LED structures that improve bonding integrity and/or mitigate stress-related deformation in active LED structures where growth substrates are removed. Exemplary contact structures include differing heights between anode and cathode mounting pads, particularly greater heights for mounting pads with smaller surface areas to ensure suitable bonding contact. Additional contact structures include arrangements of contacts and corresponding mounting pads that position bonding interfaces about various areas of LED chips that mitigate and/or counterbalance certain areas prone to stress-related deformation.

Abstract: Solid-state lighting devices and more particularly long pass filter structures for light-emitting diodes are disclosed. LED packages are disclosed that include one or more LED chips, lumiphoric materials, and integrated filter structures for reducing emissions below certain wavelengths, for example emissions that may have adverse effects on normal wildlife behavior, such as nesting sea turtles and/or newly-hatched sea turtles. Exemplary filter structures are disclosed with specific arrangements for preferentially reflecting undesired wavelengths, such as those of the one or more LED chips, while preferentially transmitting intended wavelengths, such as wavelength-converted wavelengths from lumiphoric materials. Exemplary filter structures include various layers with various tailored optical thicknesses for light entrance, middle, and light exit portions of filter structures.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly sealing structures for LED packages are disclosed. Sealing structures include multiple seals within an LED package that provide a multiple barrier structure for enhanced protection from elemental ingress from a surrounding environment. Certain seals may be provided as bonding materials between cover structures and submounts of LED packages, thereby enclosing LED chips. Additional seals may be provided as coatings on surfaces of LED chips and/or submounts that are between cover structures and LED chips. Sealing structures may include multiple levels of hermetic seals with LED packages.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly current injection structures for LED chips are disclosed. Current injection structures include integrated layers or materials with high work functions as part of contact structures for epitaxial layers of active LED structures. Exemplary structures provide high work function contact layers for p-type epitaxial layers to enhance hole mobility and transport. Further contact structures include combinations of high work function layers with other current spreading layers. Exemplary materials for high work function layers include transition metal oxides.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly sealing structures for LED packages are disclosed. Sealing structures include multiple seals within an LED package that provide a multiple barrier structure for enhanced protection from elemental ingress from a surrounding environment. Certain seals may be provided as bonding materials between cover structures and submounts of LED packages, thereby enclosing LED chips. Additional seals may be provided as coatings on surfaces of LED chips and/or submounts that are between cover structures and LED chips. Sealing structures may include multiple levels of hermetic seals with LED packages.

Abstract: Light-emitting devices and more particularly wafer level fabrication for multiple chip light-emitting devices is disclosed. Light-emitting devices include certain LED package structures, such as LED chips, submounts, and electrical connections that are formed by wafer level fabrication before individual light-emitting devices are separated. Methods include joining LED wafers with multiple LED chips formed thereon to submount wafers that include corresponding metallization patterns, followed by separating individual light-emitting devices. Each light-emitting device includes arrays of LED chips that are already bonded to a submount with electrical connections. The arrays of LED chips may be electrically coupled in a variety of electrical configurations based on arrangements of the metallization patterns.

Abstract: Light-emitting diode (LED) packages, and more particularly arrangements of multiple LED chips in LED packages are disclosed. Arrangements include different types, different dimensions, and/or different orientations of LED chips within LED packages and corresponding electrical connections. Further arrangements include individual cover structures having different dimensions for various LED chips to accommodate thickness variations of LED chips and/or thickness variations attributed to different elements of individual cover structures. Different cover structure elements may include lumiphoric materials, antireflective layers, filter layers, and polarization layers. By accounting for dimensional variations between LED chips and/or between cover structures within multiple-chip LED packages, aggregate light-emitting surfaces may be provided with improved emission uniformity.