Patents by Inventor Thomas COOLS

Thomas COOLS has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10412326
    Abstract: A global shutter imaging pixel may have a single source follower transistor. The source follower transistor may be coupled to a floating diffusion region and a charge storage region. In order to read out samples from the charge storage region without including a second source follower transistor in each pixel, the samples may be transferred to floating diffusion regions of adjacent pixels. Alternatively, a transistor may be configured to transfer charge from the charge storage region to the floating diffusion region of the same pixel, thus reusing a single source follower transistor. These types of pixels may be used for correlated double sampling, where a reset charge level and integration charge level are both sampled. These pixels may also operate in a global shutter mode where images are captured simultaneously by each pixel.
    Type: Grant
    Filed: November 7, 2018
    Date of Patent: September 10, 2019
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Tomas Geurts, Thomas Cools
  • Publication number: 20190075259
    Abstract: A global shutter imaging pixel may have a single source follower transistor. The source follower transistor may be coupled to a floating diffusion region and a charge storage region. In order to read out samples from the charge storage region without including a second source follower transistor in each pixel, the samples may be transferred to floating diffusion regions of adjacent pixels. Alternatively, a transistor may be configured to transfer charge from the charge storage region to the floating diffusion region of the same pixel, thus reusing a single source follower transistor. These types of pixels may be used for correlated double sampling, where a reset charge level and integration charge level are both sampled. These pixels may also operate in a global shutter mode where images are captured simultaneously by each pixel.
    Type: Application
    Filed: November 7, 2018
    Publication date: March 7, 2019
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Tomas GEURTS, Thomas COOLS
  • Patent number: 10154210
    Abstract: A global shutter imaging pixel may have a single source follower transistor. The source follower transistor may be coupled to a floating diffusion region and a charge storage region. In order to read out samples from the charge storage region without including a second source follower transistor in each pixel, the samples may be transferred to floating diffusion regions of adjacent pixels. Alternatively, a transistor may be configured to transfer charge from the charge storage region to the floating diffusion region of the same pixel, thus reusing a single source follower transistor. These types of pixels may be used for correlated double sampling, where a reset charge level and integration charge level are both sampled. These pixels may also operate in a global shutter mode where images are captured simultaneously by each pixel.
    Type: Grant
    Filed: September 7, 2016
    Date of Patent: December 11, 2018
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Tomas Geurts, Thomas Cools
  • Publication number: 20180147278
    Abstract: The present invention relates to a porcine parvovirus and porcine reproductive and respiratory syndrome virus vaccine for protecting a subject, preferably swine, against diseases associated with porcine parvovirus and porcine reproductive and respiratory syndrome virus. The present invention further relates to methods of producing immunogenic compositions as well as such immunogenic compositions exhibiting reduced virucidal activity.
    Type: Application
    Filed: November 2, 2017
    Publication date: May 31, 2018
    Inventors: Sonja KLOCKE, Robert Thomas COOL, Curtis Robert EDWARDS, Fuad Tawfiq HADDADIN, Gregory Brian HAIWICK, Troy James KAISER, Jeremy KROLL, Sonia Regina Cantisano MALBURG, Marta NOGUERA SERRAT, Merrill Lynn SCHAEFFER, Andrea J. Headrick STARKS, Michael Landon STEWART, Eric Martin VAUGHN, Guosong ZHAO
  • Publication number: 20180070030
    Abstract: A global shutter imaging pixel may have a single source follower transistor. The source follower transistor may be coupled to a floating diffusion region and a charge storage region. In order to read out samples from the charge storage region without including a second source follower transistor in each pixel, the samples may be transferred to floating diffusion regions of adjacent pixels. Alternatively, a transistor may be configured to transfer charge from the charge storage region to the floating diffusion region of the same pixel, thus reusing a single source follower transistor. These types of pixels may be used for correlated double sampling, where a reset charge level and integration charge level are both sampled. These pixels may also operate in a global shutter mode where images are captured simultaneously by each pixel.
    Type: Application
    Filed: September 7, 2016
    Publication date: March 8, 2018
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Tomas GEURTS, Thomas COOLS