Patents by Inventor Thomas D. Bonifiield

Thomas D. Bonifiield has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing a semiconductor device having silicided regions
    Patent number: 7422968
    Abstract: The present invention provides a method for manufacturing a semiconductor device, and a method for manufacturing an integrated circuit including the semiconductor devices. The method for manufacturing a semiconductor device (100) , among other steps, includes forming a gate structure (120) over a substrate (110) and forming source/drain regions (190) in the substrate (110) proximate the gate structure (120). The method further includes subjecting the gate structure (120) and substrate (110) to a dry etch process and placing fluorine in the source/drain regions to form fluorinated source/drains (320) subsequent to subjecting the gate structure (120) and substrate (110) to the dry etch process. Thereafter, the method includes forming metal silicide regions (510, 520) in the gate structure (120) and the fluorinated source/drains (320).
    Type: Grant
    Filed: July 29, 2004
    Date of Patent: September 9, 2008
    Assignee: Texas Instruments Incorporated
    Inventors: Jiong-Ping Lu, Clint Montgomery, Lindsey Hall, Donald Miles, Duofeng Yue, Thomas D. Bonifiield