Abstract: A slot-die type gas distribution device for photovoltaic manufacturing is provided. The slot-die type gas distribution device includes a first gas distribution device at a process chamber inlet and a second gas distribution device at a process chamber outlet. The first gas distribution device is connected to the process chamber inlet through a flat quadrangular first communication device, and the second gas distribution device is connected to the process chamber outlet through a flat quadrangular third communication device. The slot-die type gas distribution device effectively improves gas distribution uniformity in a process chamber.

Abstract: A method for post-treating an absorber layer for photoelectric conversion of incident light into electric current. The method includes providing a chalcogen-containing absorber layer on a carrier, applying a post-treatment layer on a surface of the absorber layer, wherein the post-treatment material is not a buffer or component of a buffer, and thermally diffusing the post-treatment material into the absorber layer. A method for producing a layer system for the production of thin-film solar cells is also described.

Abstract: A slot-die type gas distribution device for photovoltaic manufacturing is provided. The slot-die type gas distribution device includes a first gas distribution device (105) at a process chamber inlet (104) and a second gas distribution device (13) at a process chamber outlet (11). The first gas distribution device (105) is connected to the process chamber inlet (104) through a flat quadrangular first communication device (9), and the second gas distribution device (13) is connected to the process chamber outlet (11) through a flat quadrangular third communication device (12). The device effectively improves the gas distribution uniformity in the process chamber.

Abstract: The bypass diode of each monolithic cell is formed on a substrate in the form of a thin film, and adopts a structure similar to that of the monolithic cell; each monolithic cell and the corresponding bypass diode share the same substrate; a layer treatment method for the thin film in a bypass diode region on the substrate is different from that for a cell region, and a compound material or layer sequence adopted as the layer of the thin film in the bypass diode region on the substrate is different from that in the cell region, so as to decrease a threshold voltage of the bypass diode.

Abstract: The bypass diode of each monolithic cell is formed on a substrate in the form of a thin film, and adopts a structure similar to that of the monolithic cell; each monolithic cell and the corresponding bypass diode share the same substrate; a layer treatment method for the thin film in a bypass diode region on the substrate is different from that for a cell region, and a compound material or layer sequence adopted as the layer of the thin film in the bypass diode region on the substrate is different from that in the cell region, so as to decrease a threshold voltage of the bypass diode.

Abstract: A slot-die type gas distribution device for photovoltaic manufacturing is provided. The slot-die type gas distribution device includes a first gas distribution device (105) at a process chamber inlet (104) and a second gas distribution device (13) at a process chamber outlet (11). The first gas distribution device (105) is connected to the process chamber inlet (104) through a flat quadrangular first communication device (9), and the second gas distribution device (13) is connected to the process chamber outlet (11) through a flat quadrangular third communication device (12). The device effectively improves the gas distribution uniformity in the process chamber.

Abstract: A method for post-treating an absorber layer for photoelectric conversion of incident light into electric current. The method includes providing a chalcogen-containing absorber layer on a carrier, applying a post-treatment layer on a surface of the absorber layer, wherein the post-treatment material is not a buffer or component of a buffer, and thermally diffusing the post-treatment material into the absorber layer. A method for producing a layer system for the production of thin-film solar cells is also described.

Abstract: The present invention relates to a layer system (1) for thin-film solar cells (100) and solar modules, comprising an absorber layer (4), which includes a chalcogenide compound semiconductor, and a buffer layer (5), which is arranged on the absorber layer (4) and includes halogen-enriched ZnxIn1-xSy with 0.01?x?0.9 and 1?y?2, wherein the buffer layer (5) consists of a first layer region (5.1) adjoining the absorber layer (4) with a halogen mole fraction A1 and a second layer region (5.2) adjoining the first layer region (5.1) with a halogen mole fraction A2 and the ratio A1/A2 is ?2 and the layer thickness (d1) of the first layer region (5.1) is ?50% of the layer thickness (d) of the buffer layer (5).

Abstract: The present invention relates to a method for producing a compound semiconductor (2), which comprises the following steps: Producing at least one precursor layer stack (11), consisting of a first precursor layer (5.1), a second precursor layer (6), and a third precursor layer (5.2), wherein, in a first stage, the first precursor layer (5.1) is produced by depositing the metals copper, indium, and gallium onto a body (12), and, in a second stage, the second precursor layer (6) is produced by depositing at least one chalcogen, selected from sulfur and selenium, onto the first precursor layer (5.1) and, in a third stage, the third precursor layer (5.2) is produced by depositing the metals copper, indium, and gallium onto the second precursor layer (6); Heat treating the at least one precursor layer stack (11) in a process chamber (13) such that the metals of the first precursor layer (5.1), the at least one chalcogen of the second precursor layer (6), and the metals of the third precursor layer (5.

Abstract: The present invention relates to a layer system (1) for thin-film solar cells with an absorber layer (4) that contains a chalcogenide compound semiconductor and a buffer layer (5) that is arranged on the absorber layer (4), wherein the buffer layer (5) contains NaxIn1SyClz with 0.05?x<0.2 or 0.2<x?0.5, 1?y?2, and 0.6?x/z ?1.4.

Abstract: A method for producing a layer system for thin-film solar cells is described, wherein a) an absorber layer is produced, and b) a buffer layer is produced on the absorber layer, wherein the buffer layer contains sodium indium sulfide according to the formula NaxIny-x/3S with 0.063?x?0.625 and 0.681?y?1.50, and wherein the buffer layer is produced, without deposition of indium sulfide, based on at least one sodium thioindate compound.

Abstract: A layer system (1) for thin-film solar cells (100), comprising an absorber layer (4), which contains a chalcogenide compound semiconductor, and a buffer layer (5), which is arranged on the absorber layer (4), wherein the buffer layer (5) has a semiconductor material of the formula AxInySz, where A is potassium (K) and/or cesium (Cs), with 0.015?x/(x+y+z)?0.25 and 0.30?y/(y+z)?0.45.

Abstract: The present invention relates to a layer system (1) for thin-film solar cells (100) and solar modules, comprising an absorber layer (4), which includes a chalcogenide compound semiconductor, and a buffer layer (5), which is arranged on the absorber layer (4) and includes halogen-enriched ZnxIn1-xSy with 0.01?x?0.9 and 1?y?2, wherein the buffer layer (5) consists of a first layer region (5.1) adjoining the absorber layer (4) with a halogen mole fraction A1 and a second layer region (5.2) adjoining the first layer region (5.1) with a halogen mole fraction A2 and the ratio A1/A2 is ?2 and the layer thickness (d1) of the first layer region (5.1) is ?50% of the layer thickness (d) of the buffer layer (5).

Abstract: The invention concerns a layer system for thin-layer solar cells, said layer system comprising an absorber layer for absorbing light and a buffer layer on the absorber layer, said buffer layer containing NaxIny-x/3S, in which 0.063?x?0.625 and 0.681?y?1.50.

Abstract: The present invention relates to a layer system (1) for thin-film solar cells (100) and solar modules, comprising an absorber layer (4) that includes a chalcogenide compound semiconductor and a buffer layer (5) that is arranged on the absorber layer (4) and includes halogen-enriched InxSy with ??x/y?1, wherein the buffer layer (5) consists of a first layer region (5.1) adjoining the absorber layer (4) with a halogen mole fraction A1 and a second layer region (5.2) adjoining the first layer region (5.1) with a halogen mole fraction A2 and the ratio A1/A2 is ?2 and the layer thickness (d1) of the first layer region (5.1) is ?50% of the layer thickness (d) of the buffer layer (5).

Abstract: The present invention relates to a method for producing a compound semiconductor (2), which comprises the following steps: Producing at least one precursor layer stack (11), consisting of a first precursor layer (5.1), a second precursor layer (6), and a third precursor layer (5.2), wherein, in a first stage, the first precursor layer (5.1) is produced by depositing the metals copper, indium, and gallium onto a body (12), and, in a second stage, the second precursor layer (6) is produced by depositing at least one chalcogen, selected from sulfur and selenium, onto the first precursor layer (5.1) and, in a third stage, the third precursor layer (5.2) is produced by depositing the metals copper, indium, and gallium onto the second precursor layer (6); Heat treating the at least one precursor layer stack (11) in a process chamber (13) such that the metals of the first precursor layer (5.1), the at least one chalcogen of the second precursor layer (6), and the metals of the third precursor layer (5.

Abstract: The present invention relates to a layer system (1) for thin-film solar cells with an absorber layer (4) that contains a chalcogenide compound semiconductor and a buffer layer (5) that is arranged on the absorber layer (4), wherein the buffer layer (5) contains NaxIn1SyClz with 0.05?x?0.2 or 0.2<x?0.5, 1?y?2, and 0.6?x/z?1.4.

Abstract: A method for the evaluative analysis of a photovoltaic layer system is described. The method applies to a semiconductor layer forming a pn junction: an electric current is generated in the layer system; a spatially resolved thermal image of the surface of the layer system is generated; an intensity distribution of the thermal radiation relative to the respective number of pixels with the same intensity value is determined; an intensity mean/median from the intensity distribution is determined; an intensity interval based on a specifiable measure for a scattering of the intensity distribution is determined; a characteristic number is determined; and the characteristic number or a calculation value based thereon is compared with a specifiable reference characteristic number.

Abstract: A method for the evaluative analysis of a photovoltaic layer system is described. The method applies to a semiconductor layer forming a pn junction: an electric current is generated in the layer system; a spatially resolved thermal image of the surface of the layer system is generated; an intensity distribution of the thermal radiation relative to the respective number of pixels with the same intensity value is determined; an intensity mean/median from the intensity distribution is determined; an intensity interval based on a specifiable measure for a scattering of the intensity distribution is determined; a characteristic number is determined; and the characteristic number or a calculation value based thereon is compared with a specifiable reference characteristic number.