Patents by Inventor Thomas Dekorsy
Thomas Dekorsy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 8563955Abstract: The invention concerns a passive terahertz radiation source configured to emit electromagnetic radiation having frequency in the range of 10 GHz to 50 THz and a method for generating a terahertz radiation. The passive terahertz radiation source comprises: a source of a pulsed excitation light; an emitter comprising one or more emitter elements, each emitter element comprising a semiconductor layer being arranged such that at least a portion of a first major surface of said semiconductor layer is exposed to the excitation light, wherein each emitter element is configured such that upon exposure to the excitation light, a gradient of the charge carrier density is generated in the semiconductor layer in the area of transition between a first area of the semiconductor layer and a second area of the semiconductor layer, the gradient being substantially parallel to the first major surface of the semiconductor layer.Type: GrantFiled: June 9, 2009Date of Patent: October 22, 2013Assignee: Baden-Wurttemberg Stiftung GGmbHInventors: Thomas Dekorsy, Gregor Klatt, Georg Bastian, Klaus Huska
-
Publication number: 20120132832Abstract: The invention concerns a passive terahertz radiation source configured to emit electromagnetic radiation having frequency in the range of 10 GHz to 50 THz and a method for generating a terahertz radiation. The passive terahertz radiation source comprises: a source of a pulsed excitation light; an emitter comprising one or more emitter elements, each emitter element comprising a semiconductor layer being arranged such that at least a portion of a first major surface of said semiconductor layer is exposed to the excitation light, wherein each emitter element is configured such that upon exposure to the excitation light, a gradient of the charge carrier density is generated in the semiconductor layer in the area of transition between a first area of the semiconductor layer and a second area of the semiconductor layer, the gradient being substantially parallel to the first major surface of the semiconductor layer.Type: ApplicationFiled: June 9, 2009Publication date: May 31, 2012Applicant: BADEN-WURTTEMBERG STIFTUNG GGMBHInventors: Thomas Dekorsy, Gregor Klatt, Georg Bastian, Klaus Huska
-
Patent number: 7848376Abstract: A quantum cascade laser structure in accordance with the invention comprises a number of cascades (100), each of which comprises a number of alternately arranged quantum wells (110a to 110j) and barrier layers (105 to 105j). The material of at least one quantum well (110a to 110j) as well as the material of at least one barrier layer (105 to 105j) is under mechanical strain, with the respective strain being either a tensile strain or a compression strain. The quantum wells (110a to 110j) and barrier layers (105 to 105j) are engineered in the quantum cascade laser structure in accordance with the invention so that existing strains are largely compensated within a cascade (100). In the quantum cascade laser structure in accordance with the invention, each material of the quantum wells (110a to 110j) has only one constituent material and the material of at least one barrier layer (105d, 105e, 105f) has at least two constituent materials (111a, 111b, 112a, 112b, 113a, 113b).Type: GrantFiled: July 10, 2008Date of Patent: December 7, 2010Assignees: Humboldt-Universtaet Zu Berlin, Forschungszentrum Rossendorf e.V.Inventors: William Ted Masselink, Sebastian Dressler, Mykhaylo Petrovych Semtsiv, Nikolai Georgiev, Manfred Helm, Thomas Dekorsy, Mathias Ziegler
-
Publication number: 20090034570Abstract: A quantum cascade laser structure in accordance with the invention comprises a number of cascades (100), each of which comprises a number of alternately arranged quantum wells (110a to 110j) and barrier layers (105 to 105j). The material of at least one quantum well (110a to 110j) as well as the material of at least one barrier layer (105 to 105j) is under mechanical strain, with the respective strain being either a tensile strain or a compression strain. The quantum wells (110a to 110j) and barrier layers (105 to 105j) are engineered in the quantum cascade laser structure in accordance with the invention so that existing strains are largely compensated within a cascade (100). In the quantum cascade laser structure in accordance with the invention, each material of the quantum wells (110a to 110j) has only one constituent material and the material of at least one barrier layer (105d, 105e, 105f) has at least two constituent materials (111a, 111b, 112a, 112b, 113a, 113b).Type: ApplicationFiled: July 10, 2008Publication date: February 5, 2009Applicants: Humboldt-Universtaet zu Berlin, Forschungszentrum Rossendorf e.V.Inventors: William Ted MASSELINK, Sebastian Dressler, Mykhaylo Petrovych Semtsiv, Nikolai Georgiev, Manfred Helm, Thomas Dekorsy, Mathias Ziegler
-
Publication number: 20050213627Abstract: A quantum cascade laser structure in accordance with the invention comprises a number of cascades (100), each of which comprises a number of alternately arranged quantum wells (110a to 110j) and barrier layers (105 to 105j). The material of at least one quantum well (110a to 110j) as well as the material of at least one barrier layer (105 to 105j) is under mechanical strain, with the respective strain being either a tensile strain or a compression strain. The quantum wells (110a to 110j) and barrier layers (105 to 105j) are engineered in the quantum cascade laser structure in accordance with the invention so that existing strains are largely compensated within a cascade (100). In the quantum cascade laser structure in accordance with the invention, each material of the quantum wells (110a to 110j) has only one constituent material and the material of at least one barrier layer (105d, 105e, 105f) has at least two constituent materials (111a, 111b, 112a, 112b, 113a, 113b).Type: ApplicationFiled: February 22, 2005Publication date: September 29, 2005Applicants: Humboldt-Universtaet zu Berlin, Forschungszentrum Rossendorf e.v.Inventors: William Masselink, Sebastian Dressler, Mykhaylo Semtsiv, Nikolai Georgiev, Manfred Helm, Thomas Dekorsy, Mathias Ziegler
-
Patent number: 6618423Abstract: The invention relates to a passive mode locked femtosecond laser whose ring resonator comprises the elements: a) a laser-active element 1, b) at least a dielectric mirror 2 having a negative group velocity dispersion GVD such that for a continuous part of the optical spectrum amplifieable by the laser-active element the sum of the group velocity dispersion of the mirror 2 and the positive group velocity dispersion of the laser-active element 1 is negative, i.e. ∑ n ⁢ GVD n < 0 c) two concave mirrors 21 and 22 which are spatial adjacent next to the laser-active element and which are orientated with their concave surfaces towards the laser-active element 1 and d) an optical output coupler 3.Type: GrantFiled: February 20, 2002Date of Patent: September 9, 2003Assignee: Gigaoptics GmbHInventors: Thomas Dekorsy, Albrecht Bartels, Heinrich Kurz
-
Publication number: 20020062982Abstract: The microstrip line for high frequency applications has a metallic ground electrode, a metallic signal conductor and a dielectric arranged between ground electrode and signal conductor. The dielectric consists of a relaxed, more specifically pre-stretched, polymer film that is coated on one side with a self-adhesive layer.Type: ApplicationFiled: January 17, 2002Publication date: May 30, 2002Inventors: Michael Nagel, Thomas Dekorsy, Heinrich Kurz