Patents by Inventor Thomas Dunbar
Thomas Dunbar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240369405Abstract: An apparatus for measuring photon density, the apparatus comprising a substrate having a volume for receiving photons from within an optical radiation field, the substrate having an outer periphery, an inner periphery, and an exit aperture, a first reflecting layer coating at least a portion of the outer periphery of the substrate, the first reflective layer configured to integrate the photons within the volume of the substrate, a plurality of entrance openings within the first reflective layer for diffracting the photons entering the volume and a photon detector configured to receive the photons to detect a photon density and to produce an electrical signal representative of the detected photon density, wherein the substrate having the coating is configured such that the photons incident on the exit aperture of the volume of the substrate are at least substantially equally proportional to the photons incident on the plurality of entrance openings.Type: ApplicationFiled: May 3, 2024Publication date: November 7, 2024Inventor: Thomas Dunbar
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Patent number: 11766502Abstract: A handheld device for treating air to a user includes an airflow path having an illumination chamber with a reflective surface, wherein the reflective surface is sufficiently reflective and configured to impart multiple reflections of at least a portion of the light introduced into the illumination chamber. The introduced light is produced by an onboard UV light generator, wherein the UV light generator can be cycled corresponding to at least one of a pressure and an airflow in the airflow path.Type: GrantFiled: August 13, 2021Date of Patent: September 26, 2023Assignee: TOMPHYZX.LLCInventor: Thomas Dunbar
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Publication number: 20220288268Abstract: An air flow system for reducing pathogens in a breathable airstream in an environment has a device having an airstream intake for receiving a volume of untreated air located in a first position, an airstream outlet for expelling a volume of treated air, the airstream outlet located in a second position extending above the first position, a flow path extending between the airstream intake and the airstream outlet, at least one of a UV generator and a UV-C emitter optically coupled to the flow path, a power source operably connected to the one of the at least one of the UV generator and the UV emitter, and a pressure generator fluidly connected to the airstream intake, the pressure generator configured to impart a flow from the airstream intake to the airstream outlet, wherein the pressure generator can be at least one of a force of flow from in line pressurized source or provided by a fan within the housing, and wherein a portion of the flow path includes a UV-C highly reflective surface.Type: ApplicationFiled: May 16, 2022Publication date: September 15, 2022Inventor: Thomas Dunbar
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Patent number: 11357882Abstract: An air flow system for reducing pathogens in a breathable airstream in an environment has a device having an airstream intake for receiving a volume of untreated air located in a first position, an airstream outlet for expelling a volume of treated air, the airstream outlet located in a second position extending above the first position, a flow path extending between the airstream intake and the airstream outlet, at least one of a UV generator and a UV-C emitter optically coupled to the flow path, a power source operably connected to the one of the at least one of the UV generator and the UV emitter, and a pressure generator fluidly connected to the airstream intake, the pressure generator configured to impart a flow from the airstream intake to the airstream outlet, wherein the pressure generator can be at least one of a force of flow from in line pressurized source or provided by a fan within the housing, and wherein a portion of the flow path includes a UV-C highly reflective surface.Type: GrantFiled: August 13, 2021Date of Patent: June 14, 2022Assignee: TOMPHYZX.LLCInventor: Thomas Dunbar
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Publication number: 20220047898Abstract: A handheld device for treating air to a user includes an airflow path having an illumination chamber with a reflective surface, wherein the reflective surface is sufficiently reflective and configured to impart multiple reflections of at least a portion of the light introduced into the illumination chamber. The introduced light is produced by an onboard UV light generator, wherein the UV light generator can be cycled corresponding to at least one of a pressure and an airflow in the airflow path.Type: ApplicationFiled: August 13, 2021Publication date: February 17, 2022Inventor: Thomas Dunbar
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Publication number: 20220047766Abstract: An air flow system for reducing pathogens in a breathable airstream in an environment has a device having an airstream intake for receiving a volume of untreated air located in a first position, an airstream outlet for expelling a volume of treated air, the airstream outlet located in a second position extending above the first position, a flow path extending between the airstream intake and the airstream outlet, at least one of a UV generator and a UV-C emitter optically coupled to the flow path, a power source operably connected to the one of the at least one of the UV generator and the UV emitter, and a pressure generator fluidly connected to the airstream intake, the pressure generator configured to impart a flow from the airstream intake to the airstream outlet, wherein the pressure generator can be at least one of a force of flow from in line pressurized source or provided by a fan within the housing, and wherein a portion of the flow path includes a UV-C highly reflective surface.Type: ApplicationFiled: August 13, 2021Publication date: February 17, 2022Inventor: Thomas Dunbar
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Patent number: 8513713Abstract: A junction field effect transistor having a drain and a source, each defined by regions of a first type of semiconductor interconnected by a channel, and in which a dopant profile at a side of the drain facing the channel is modified so as to provide a region of reduced doping compared to a body region of the drain. The region of reduced doping and the body region can be defined by the same mask and doping step, but the mask is shaped to provide a lesser amount and thus less depth of doping for the region of reduced doping.Type: GrantFiled: May 10, 2012Date of Patent: August 20, 2013Assignee: Analog Devices, Inc.Inventors: Paul Malachy Daly, Andrew David Bain, Derek Frederick Bowers, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuinness, Bernard Patrick Stenson, William Allan Lane
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Patent number: 8390039Abstract: A field effect transistor having a drain, a gate and a source, where the drain and source are formed by semiconductor regions of a first type, and in which a further doped region is provided intermediate the gate and the drain. Field gradients around the drain are thereby reduced.Type: GrantFiled: November 2, 2009Date of Patent: March 5, 2013Assignee: Analog Devices, Inc.Inventors: Derek Frederick Bowers, Andrew David Bain, Paul Malachy Daly, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuinness, Bernard Patrick Stenson, William Allan Lane
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Patent number: 8357985Abstract: A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation.Type: GrantFiled: January 13, 2012Date of Patent: January 22, 2013Assignee: Analog Devices, Inc.Inventors: William Allan Lane, Andrew David Bain, Derek Frederick Bowers, Paul Malachy Daly, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuinness, Bernard Patrick Stenson
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Patent number: 8350352Abstract: A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation.Type: GrantFiled: November 2, 2009Date of Patent: January 8, 2013Assignee: Analog Devices, Inc.Inventors: William Allan Lane, Andrew David Bain, Derek Frederick Bowers, Paul Malachy Daly, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuinness, Bernard Patrick Stenson
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Patent number: 8263469Abstract: A bipolar transistor, comprising a collector, a base and an emitter, in which the collector comprises a relatively heavily doped region, and a relatively lightly doped region adjacent the base, and in which the relatively heavily doped region is substantially omitted from an intrinsic region of the transistor.Type: GrantFiled: October 6, 2011Date of Patent: September 11, 2012Assignee: Analog Devices, Inc.Inventors: Bernard Patrick Stenson, Andrew David Bain, Derek Frederick Bowers, Paul Malachy Daly, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuiness, William Allan Lane
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Publication number: 20120217551Abstract: A junction field effect transistor having a drain and a source, each defined by regions of a first type of semiconductor interconnected by a channel, and in which a dopant profile at a side of the drain facing the channel is modified so as to provide a region of reduced doping compared to a body region of the drain. The region of reduced doping and the body region can be defined by the same mask and doping step, but the mask is shaped to provide a lesser amount and thus less depth of doping for the region of reduced doping.Type: ApplicationFiled: May 10, 2012Publication date: August 30, 2012Applicant: Analog Devices, Inc.Inventors: Paul Malachy Daly, Andrew David Bain, Derek Frederick Bowers, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuiness, Bernard Patrick Stenson, William Allan Lane
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Patent number: 8193046Abstract: A junction field effect transistor having a drain and a source, each defined by regions of a first type of semiconductor interconnected by a channel, and in which a dopant profile at a side of the drain facing the channel is modified so as to provide a region of reduced doping compared to a body region of the drain. The region of reduced doping and the body region can be defined by the same mask and doping step, but the mask is shaped to provide a lesser amount and thus less depth of doping for the region of reduced doping.Type: GrantFiled: November 2, 2009Date of Patent: June 5, 2012Assignee: Analog Devices, Inc.Inventors: Paul Malachy Daly, Andrew David Bain, Derek Frederick Bowers, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuinness, Bernard Patrick Stenson, William Allan Lane
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Publication number: 20120112307Abstract: A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation.Type: ApplicationFiled: January 13, 2012Publication date: May 10, 2012Applicant: ANALOG DEVICES, INC.Inventors: William Allan Lane, Andrew David Bain, Derek Frederick Bowers, Paul Malachy Daly, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuinness, Bernard Patrick Stenson
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Patent number: 8120136Abstract: A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation.Type: GrantFiled: November 2, 2009Date of Patent: February 21, 2012Assignee: Analog Devices, Inc.Inventors: William Allan Lane, Andrew David Bain, Derek Frederick Bowers, Paul Malachy Daly, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuiness, Bernard Patrick Stenson
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Publication number: 20120028432Abstract: A bipolar transistor, comprising a collector, a base and an emitter, in which the collector comprises a relatively heavily doped region, and a relatively lightly doped region adjacent the base, and in which the relatively heavily doped region is substantially omitted from an intrinsic region of the transistor.Type: ApplicationFiled: October 6, 2011Publication date: February 2, 2012Applicant: Analog Devices, Inc.Inventors: Bernard Patrick Stenson, Andrew David Bain, Derek Frederick Bowers, Paul Malachy Daly, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuiness, William Allan Lane
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Patent number: 8058704Abstract: A bipolar transistor, comprising a collector, a base and an emitter, in which the collector comprises a relatively heavily doped region, and a relatively lightly doped region adjacent the base, and in which the relatively heavily doped region is substantially omitted from an intrinsic region of the transistor.Type: GrantFiled: November 2, 2009Date of Patent: November 15, 2011Assignee: Analog Devices, Inc.Inventors: Bernard Patrick Stenson, Andrew David Bain, Derek Frederick Bowers, Paul Malachy Daly, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuiness, William Allan Lane
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Publication number: 20110101500Abstract: A bipolar transistor, comprising a collector, a base and an emitter, in which the collector comprises a relatively heavily doped region, and a relatively lightly doped region adjacent the base, and in which the relatively heavily doped region is substantially omitted from an intrinsic region of the transistor.Type: ApplicationFiled: November 2, 2009Publication date: May 5, 2011Applicant: Analog Devices, Inc.Inventors: Bernard Patrick Stenson, Andrew David Bain, Derek Frederick Bowers, Paul Malachy Daly, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuiness, William Allan Lane
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Publication number: 20110101424Abstract: A junction field effect transistor having a drain and a source, each defined by regions of a first type of semiconductor interconnected by a channel, and in which a dopant profile at a side of the drain facing the channel is modified so as to provide a region of reduced doping compared to a body region of the drain. The region of reduced doping and the body region can be defined by the same mask and doping step, but the mask is shaped to provide a lesser amount and thus less depth of doping for the region of reduced doping.Type: ApplicationFiled: November 2, 2009Publication date: May 5, 2011Applicant: ANALOG DEVICES, INC.Inventors: Paul Malachy Daly, Andrew David Bain, Derek Frederick Bowers, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuinness, Bernard Patrick Stenson, William Allan Lane
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Publication number: 20110101486Abstract: A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation.Type: ApplicationFiled: November 2, 2009Publication date: May 5, 2011Applicant: Analog Devices, Inc.Inventors: William Allan Lane, Andrew David Bain, Derek Frederick Bowers, Paul Malachy Daly, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuiness, Bernard Patrick Stenson