Abstract: A single integrated wafer package includes a micro electromechanical system (MEMS) wafer, an active device wafer, and a seal ring. The MEMS wafer has a first surface and includes at least one MEMS component on its first surface. The active device wafer has a first surface and includes an active device circuit on its first surface. The seal ring is adjacent the first surface of the MEMS wafer such that a seal is formed about the MEMS component. An external contact is provided on the wafer package. The external contact is accessible externally to the wafer package and is electrically coupled to the active device circuit of the active device wafer.

Abstract: A pixel including a substrate of a first conductivity type and having a surface, a photodetector of a second conductivity type that is opposite the first conductivity type, a floating diffusion region of the second conductivity type, a transfer region between the photodetector and the floating diffusion, a gate positioned above the transfer region and partially overlapping the photodetector, and a pinning layer of the first conductivity type extending at least across the photodetector from the gate.

Abstract: A single integrated wafer package includes a micro electromechanical system (MEMS) wafer, an active device wafer, and a seal ring. The MEMS wafer has a first surface and includes at least one MEMS component on its first surface. The active device wafer has a first surface and includes an active device circuit on its first surface. The seal ring is adjacent the first surface of the MEMS wafer such that a seal is formed about the MEMS component. An external contact is provided on the wafer package. The external contact is accessible externally to the wafer package and is electrically coupled to the active device circuit of the active device wafer.

Abstract: A semiconductor sensor including a plurality of pixels, each of which includes a fluorescent molecule layer and a photosensitive layer. The fluorescent molecule layer converts light incident on the pixel to surface plasmons. The photosensitive layer generates a light detection signal representative of an intensity of light incident on the pixel in response to the surface plasmons in a region of the sensor which is close enough to the surface of the pixels that electronic crosstalk between the pixels does not occur.

Abstract: Method, apparatus, and/or system providing a backside illuminated imaging device. A non-planar metallic or otherwise reflective layer is provided in an image pixel cell at the frontside of the device substrate to capture radiation passing through the device substrate. The non-planar surface is formed to be capable of reflecting substantially all such radiation back to a photosensor located in the same pixel cell.

Abstract: A semiconductor integrated circuit structure and method for fabricating. The semiconductor integrated circuit structure includes a light sensitive device integral with a semiconductor substrate, a cover dielectric layer disposed over the light sensitive device, and a lens-formation dielectric layer disposed over the cover dielectric layer. Light is transmittable though the cover dielectric layer, and through the lens-formation dielectric layer. The lens-formation dielectric layer forms an embedded convex microlens. The microlens directs light onto the light sensitive device.

Abstract: A vertical tri-color sensor having vertically stacked blue, green, and red pixels detects at least blue and green components of incident light by converting the blue and green components to surface plasmons.

Abstract: A pixel including a substrate of a first conductivity type and having a surface, a photodetector of a second conductivity type that is opposite the first conductivity type, a floating diffusion region of the second conductivity type, a transfer region between the photodetector and the floating diffusion, a gate positioned above the transfer region and partially overlapping the photodetector, and a pinning layer of the first conductivity type extending at least across the photodetector from the gate.

Abstract: A pixel including a substrate of a first conductivity type and having a surface, a photodetector of a second conductivity type that is opposite the first conductivity type, a floating diffusion region of the second conductivity type, a transfer region between the photodetector and the floating diffusion, a gate positioned above the transfer region and partially overlapping the photodetector, and a pinning layer of the first conductivity type extending at least across the photodetector from the gate.

Abstract: A semiconductor integrated circuit structure and method for fabricating. The semiconductor integrated circuit structure includes a light sensitive device integral with a semiconductor substrate, a cover dielectric layer disposed over the light sensitive device, and a lens-formation dielectric layer disposed over the cover dielectric layer. Light is transmittable though the cover dielectric layer, and through the lens-formation dielectric layer. The lens-formation dielectric layer forms an embedded convex microlens. The microlens directs light onto the light sensitive device.

Abstract: Method, apparatus, and/or system providing a backside illuminated imaging device. A non-planar metallic or otherwise reflective layer is provided in an image pixel cell at the frontside of the device substrate to capture radiation passing through the device substrate. The non-planar surface is formed to be capable of reflecting substantially all such radiation back to a photosensor located in the same pixel cell.

Abstract: A semiconductor integrated circuit structure and method for fabricating. The semiconductor integrated circuit structure includes a light sensitive device integral with a semiconductor substrate, a cover dielectric layer disposed over the light sensitive device, and a lens-formation dielectric layer disposed over the cover dielectric layer. Light is transmittable through the cover dielectric layer; and through the lens-formation dielectric layer. The lens-formation dielectric layer forms an embedded convex microlens. The microlens directs light onto the light sensitive device.

Abstract: A shallow semiconductor sensor with a fluorescent molecule layer that eliminates optical and electronic crosstalk.

Abstract: Monolithic devices that include an acoustic resonator vertically integrated with electronic circuitry are described. In one aspect, a monolithic integrated device includes a substrate, electronic circuitry supported by the substrate, an acoustic isolator over the electronic circuitry, and an acoustic resonator on the acoustic isolator. A method of fabricating the monolithic device also is described.

Abstract: A semiconductor integrated circuit structure and method for fabricating. The semiconductor integrated circuit structure includes a light sensitive device integral with a semiconductor substrate, a cover dielectric layer disposed over the light sensitive device, and a lens-formation dielectric layer disposed over the cover dielectric layer. Light is transmittable though the cover dielectric layer; and through the lens-formation dielectric layer. The lens-formation dielectric layer forms an embedded convex microlens. The microlens directs light onto the light sensitive device.

Abstract: A single integrated wafer package includes a micro electromechanical system (MEMS) wafer, an active device wafer, and a seal ring. The MEMS wafer has a first surface and includes at least one MEMS component on its first surface. The active device wafer has a first surface and includes an active device circuit on its first surface. The seal ring is adjacent the first surface of the MEMS wafer such that a seal is formed about the MEMS component. An external contact is provided on the wafer package. The external contact is accessible externally to the wafer package and is electrically coupled to the active device circuit of the active device wafer.

Abstract: A pixel including a substrate of a first conductivity type, a photodetector of a second conductivity type that is opposite the first conductivity type and configured to convert incident light to a charge, a floating diffusion of the second conductivity, and a transfer region between the photodetector and floating diffusion. A gate is formed above the transfer region and partially overlaps the photodetector and is configured to transfer charge from the photodetector to the floating diffusion. A pinning layer of the first conductivity type extends at least across the photodetector from the gate. A channel region of the first conductivity type extends generally from a midpoint of the gate at least across the photodiode and is formed by an implant of a dopant of the first conductivity and having a concentration such that a dopant concentration of the transfer region is greater proximate to the photodetector than proximate to the floating diffusion.

Abstract: A radiation device for therapeutic use in the human body allows the application of light waves to an affected area the body. A bulb, preferably a xenon bulb, produces light which is passed through a lens module having silicon and carbon granules therein. By applying different lenses to the device, a variation in the wavelength of light and radiation applied to an area is achieved. Each lens corresponds to a Shakra energy center. The device has a pistol-like housing to allow for controlled application of the radiation.

Abstract: A chiropractic adjustment tool or tapper comprises a housing, the housing having an open end; a striker assembly disposed within the housing and secured thereto; and a plunger device or plunger disposed externally to the housing and secured thereto, the plunger being in communication with the striker assembly through the open end in the housing. The striker assembly comprises a reciprocating striking rod. A power source, such as a pneumatic motor, electric motor, solenoid arrangement, or the like, provides power through a series of gears and springs to move the striking rod in reciprocating fashion. The plunger comprises a plunging rod slidable within a body. Once each cycle, the striking rod strikes the plunging rod, which moves away from the striking rod and strikes the patient's body. Upon striking the patient's body, another spring retracts the plunging rod until it once again contacts the striking rod and is again forced against the patient's body.

Abstract: A radiation device for therapeutic use in the human body allows the application of light waves to an affected area of the body. A bulb, preferrably a xenon bulb, produces light which is passed through a lens module having silicon and carbon granules therein. By applying different lenses to the device, a variation in the wavelengths of light and radiation applied to an area is achieved. The device has a pistol-like housing to allow for controlled application of the radiation.