Patents by Inventor Thomas E. Erstfeld

Thomas E. Erstfeld has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for the epitaxial deposition of III-V compounds utilizing a binary alloy as the metallic source
    Patent number: 4504329
    Abstract: The present invention provides for the deposition of group III-V ternary epitaxial films onto the surfaces of suitable semiconductor substrates. The deposition is accomplished by a vapor phase epitaxy-hydride technique using a group III binary alloy as a group III metal source and phosphine, arsine or stibine as a group V hydride source.
    Type: Grant
    Filed: October 6, 1983
    Date of Patent: March 12, 1985
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Kenneth P. Quinlan, Thomas E. Erstfeld
  • Process for the epitaxial deposition of III-V compounds utilizing a continuous in-situ hydrogen chloride etch
    Patent number: 4488914
    Abstract: A process for depositing an epitaxial film of a III-V compound onto the surface of a crystallographically compatible substrate which includes contacting said substrate with a vaporous mixture of a group III element and a group V element to effect the deposition of a group III-V compound thereon while simultaneously introducing a flow of hydrogen halide gas during deposition of the group III-V compound.
    Type: Grant
    Filed: October 29, 1982
    Date of Patent: December 18, 1984
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Kenneth P. Quinlan, Thomas E. Erstfeld
  • Method for the preparation of epitaxial films of mercury cadmium telluride
    Patent number: 4487640
    Abstract: A method for depositing a (Hg,Cd)Te film onto a CdTe substrate by using two separate vaporizeable sources of reactant materials each maintained at separate and distinct temperatures followed by the step of mixing both of each sources with a hydrogen halide gas and passing the resulting mixtures over a CdTe substrate maintained at a lower temperature distinct and different from the temperatures maintained during vaporization of the two distinct vaporizeable sources.
    Type: Grant
    Filed: February 22, 1983
    Date of Patent: December 11, 1984
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventor: Thomas E. Erstfeld