Patents by Inventor Thomas E. Hendrickson
Thomas E. Hendrickson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 5187552Abstract: Field-effect transistor devices are provided having a relatively substantial capability to withstand reverse bias voltages. This capability is provided through providing shields in these devices near junctions in such devices which are subject to breakdown under large reverse bias voltages, those shields being operable at selected voltages. The device can also be provided having a relatively low "on" condition resistance between the source and drain terminals thereof by virtue of a geometrical design choice. A method for fabricating one such device is also disclosed.Type: GrantFiled: February 26, 1991Date of Patent: February 16, 1993Inventors: Thomas E. Hendrickson, Ronald G. Koelsch
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Patent number: 4797724Abstract: An IGFET is presented which includes a relatively low resistance path across the source-substrate junction to prevent parasitic bipolar effects while maintaining high component density in integrated circuits. The low resistance path across the source-substrate junction is formed by various methods including damaging the crystal structure at the junction interface, supplementing the damaged junction with a heavily doped region underlying the source region and spiking metallurgy. A particular application of the invention allows the prevention of latchup in CMOS devices. The invention also allows the source region of an IGFET to serve the dual functions of a source for a MOSFET as well as an ohmic contact to the underlying well or substrate.Type: GrantFiled: June 30, 1982Date of Patent: January 10, 1989Assignee: Honeywell Inc.Inventors: Clifford H. Boler, Marc D. Hartranft, Thomas E. Hendrickson
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Patent number: 4735914Abstract: Field-effect transistor devices are provided having a relatively substantial capability to withstand reverse bias voltages. This capability is provided through providing shields in these devices near junctions in such devices which are subject to breakdown under large reverse bias voltages, these shields being operable at selected voltages. The device can also be provided having a relatively low "on" condition resistance between the source and drain terminals thereof by virtue of a geometrical design choice. A method for fabricating one such device is also disclosed.Type: GrantFiled: August 8, 1986Date of Patent: April 5, 1988Assignee: Honeywell Inc.Inventors: Thomas E. Hendrickson, Ronald G. Koelsch
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Patent number: 4618922Abstract: A circuit arrangement is provided for a command source directing operation of a subsequent circuit. This command source circuit, based on using cross-coupled transistors, is electrically isolated from the subsequent circuit when no commands are being generated, and provides an output of constant polarity for input command signals of either constant or varying polarity.Type: GrantFiled: November 16, 1981Date of Patent: October 21, 1986Assignee: Honeywell Inc.Inventors: Marc D. Hartranft, Thomas E. Hendrickson
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Patent number: 4610062Abstract: A capacitive acoustic transducer comprises a first field plate mounted to a semiconductor substrate structure, a second metal field plate having first and second oppositely and substantially exposed surfaces, and a mounting arrangement for mounting the second field plate to the semiconductor substrate structure so that the first and second field plates form an acoustically responsive capacitor, the first exposed surface of the second field plate substantially facing the first field plate, the mounting arrangement allowing the second field plate to respond to acoustic energy for altering the capacitance between the first and second field plates, the mounting arrangement including first and second contacts for respective connection to the first and second field plates.Type: GrantFiled: September 6, 1984Date of Patent: September 9, 1986Assignee: Honeywell Inc.Inventors: Jon A. Roberts, Thomas E. Hendrickson
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Patent number: 4495385Abstract: A capacitive acoustic transducer comprises a first field plate mounted to a semiconductor substrate structure, a second metal field plate having first and second oppositely and substantially exposed surfaces, and a mounting arrangement for mounting the second field plate to the semiconductor substrate structure so that the first and second field plates form an acoustically responsive capacitor, the first exposed surface of the second field plate substantially facing the first field plate, the mounting arrangement allowing the second field plate to respond to acoustic energy for altering the capacitance between the first and second field plates, the mounting arrangement including first and second contacts for respective connection to the first and second field plates.Type: GrantFiled: December 2, 1982Date of Patent: January 22, 1985Assignee: Honeywell Inc.Inventors: Jon A. Roberts, Thomas E. Hendrickson
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Patent number: 4420790Abstract: A semiconductor capacitance transducer includes adjoining integrated sensor and reference capacitance transducers formed from silicon wafers. The transducers are parallel plate transducers which are structurally the same except that one plate of the sensor transducer is a thin force sensing diaphragm which deflects in response to selected environmental phenomena while the corresponding plate of the reference transducer is adapted to deform in response to some, but not all, of the selected environmental phenomena. By comparing the capacitance of the transducers, the effects of the phenomena which deform the reference transducer can be distinguished from the effects of the phenomena which do not deform the reference transducer. A particular application of the present invention allows thermal effects on the sensor transducer to be distinguished from the effects of pressure.Type: GrantFiled: April 2, 1982Date of Patent: December 13, 1983Assignee: Honeywell Inc.Inventors: Keith W. Golke, Thomas E. Hendrickson, Charles C. Huang
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Patent number: 4356150Abstract: A conductivity type thin film humidity sensor on a silicon chip which sensor includes structure which electrically shields the sensing area from highly dissociative contaminants.Type: GrantFiled: May 15, 1981Date of Patent: October 26, 1982Assignee: Honeywell Inc.Inventors: Robert G. Johnson, Thomas E. Hendrickson
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Patent number: 4319182Abstract: Electronic switching circuit is provided for controlling transfer of electrical power from an alternating polarity electrical power supply to a load means through use of a field-effect transistor device as the controlling element. A circuit arrangement is provided for switching into the "on" condition primary power control field-effect transistor device only when the voltage thereacross is at a relatively low value and for switching into the "off" condition this device in a gradual manner, relatively slowly reducing currents flowing therethrough. A circuit arrangement for a command source directing operation of the primary power transfer control field-effect transistor device provides command source isolation.Type: GrantFiled: April 18, 1980Date of Patent: March 9, 1982Assignee: Honeywell Inc.Inventors: Marc D. Hartranft, Thomas E. Hendrickson
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Patent number: 4295057Abstract: An electronic control circuit is provided which operates on selected characteristics of oppositely phased control signals. A logic arrangement sorts out those signal portions having the selected characteristics to provide an output signal.Type: GrantFiled: November 8, 1979Date of Patent: October 13, 1981Assignee: Honeywell Inc.Inventor: Thomas E. Hendrickson
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Patent number: 4266237Abstract: A photodetector signal processing arrangement is provided for converting small photodetector output signal currents to sufficiently high voltages to operate subsequent circuitry using the capacitance as the conversion needs.Type: GrantFiled: September 7, 1979Date of Patent: May 5, 1981Assignee: Honeywell Inc.Inventor: Thomas E. Hendrickson
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Patent number: 4256979Abstract: An electronic switching circuit is provided for controlling transfer of electrical power from an alternating polarity electrical power supply to a load means through use of a field-effect transistor device as the primary power controlling element.Type: GrantFiled: December 26, 1978Date of Patent: March 17, 1981Assignee: Honeywell, Inc.Inventors: Thomas E. Hendrickson, Thomas C. Spindler
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Patent number: 4256977Abstract: An electronic switching circuit is provided for controlling transfer of electrical power from an alternating polarity electrical power supply to a load means through use of a field-effect transistor device as the primary power controlling element.Type: GrantFiled: December 26, 1978Date of Patent: March 17, 1981Assignee: Honeywell Inc.Inventor: Thomas E. Hendrickson
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Patent number: 4236831Abstract: A semiconductor device is provided having a plurality of photodiodes formed in series by polycrystalline semiconductor material.Type: GrantFiled: July 27, 1979Date of Patent: December 2, 1980Assignee: Honeywell Inc.Inventor: Thomas E. Hendrickson
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Patent number: 4235011Abstract: A method for fabricating a field-effect transistor device is provided with the device resulting having a relatively substantial capability to withstand reverse bias voltages. The device can also be provided having a relatively low "on" condition resistance between the source and drain terminals thereof by virtue of a geometrical design choice.Type: GrantFiled: March 28, 1979Date of Patent: November 25, 1980Assignee: Honeywell Inc.Inventors: Douglas B. Butler, Thomas E. Hendrickson, Ronald G. Koelsch
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Patent number: 4169273Abstract: A signal processor is disclosed for operating on signals provided by a photodetector, particularly photodetectors, or arrays thereof, for use in image processing. The processor is particularly well implemented by use of charge-coupled device technology for sampling and processing the photodetector signals. The photodetector signals are sampled many times in a frame to provide a combined result representation of an image element in that frame to thereby reduce noise associated therewith.Type: GrantFiled: June 26, 1978Date of Patent: September 25, 1979Assignee: Honeywell Inc.Inventor: Thomas E. Hendrickson
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Patent number: 4152714Abstract: A field-effect transistor device is provided having a relatively substantial capability to withstand reverse bias voltages. The device can also be provided having a relatively low "on" condition resistance between the source and drain terminals thereof by virtue of the geometrical design used.Type: GrantFiled: January 16, 1978Date of Patent: May 1, 1979Assignee: Honeywell Inc.Inventors: Thomas E. Hendrickson, James M. Daughton
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Patent number: 4148047Abstract: A field-effect transistor device is provided having a relatively low "on" condition resistance between the source and drain terminals thereof by virtue of the geometrical design used.Type: GrantFiled: January 16, 1978Date of Patent: April 3, 1979Assignee: Honeywell Inc.Inventor: Thomas E. Hendrickson
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Patent number: 4148046Abstract: A field-effect transistor device is provided having a relatively substantial capability to withstand reverse bias voltages. The device can also be provided having a relatively low "on" condition resistance between the source and drain terminals thereof by virtue of the geometrical design used.Type: GrantFiled: January 16, 1978Date of Patent: April 3, 1979Assignee: Honeywell Inc.Inventors: Thomas E. Hendrickson, Jack S. T. Huang
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Patent number: 4089103Abstract: Methods for monolithic integrated circuit construction are presented wherein component device-isolating region self-alignment is provided and also, where an element of the device is provided through independent dopant provision steps to allow design flexibility in providing that device element and associated integrated circuit devices. The method is especially applicable to bipolar device construction.Type: GrantFiled: June 4, 1976Date of Patent: May 16, 1978Assignee: Honeywell Inc.Inventors: Thomas E. Hendrickson, Jack S. T. Huang, Wolfgang Tetzlaff