Patents by Inventor Thomas E. Kuehl

Thomas E. Kuehl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Resistor integration structure and technique for noise elimination
    Patent number: 7384855
    Abstract: A method of preventing contact noise in a SiCr thin film resistor includes performing in situ depositions of a SiCr layer and then a TiW layer on a substrate without breaking a vacuum between the depositions, to prevent formation of any discontinuous oxide between the SiCr layer and the TiW layer. The SiCr and TiW layers are patterned to form a predetermined SiCr thin film resistor pattern and a TiW resistor contact pattern on the SiCr thin film resistor, and a metallization layer is provided to contact the TiW forming the resistor contact pattern.
    Type: Grant
    Filed: October 26, 2006
    Date of Patent: June 10, 2008
    Assignee: Texas Instruments Incorporated
    Inventors: Rajneesh Jaiswal, H. Jerome Barber, Thomas E. Kuehl
  • Resistor integration structure and technique for noise elimination
    Patent number: 7196398
    Abstract: A method of preventing contact noise in a SiCr thin film resistor includes performing in situ depositions of a SiCr layer and then a TiW layer on a substrate without breaking a vacuum between the depositions, to prevent formation of any discontinuous oxide between the SiCr layer and the TiW layer. The SiCr and TiW layers are patterned to form a predetermined SiCr thin film resistor pattern and a TiW resistor contact pattern on the SiCr thin film resistor, and a metallization layer is provided to contact the TiW forming the resistor contact pattern.
    Type: Grant
    Filed: March 4, 2005
    Date of Patent: March 27, 2007
    Assignee: Texas Instruments Incorporated
    Inventors: Rajneesh Jaiswal, H. Jerome Barber, Thomas E. Kuehl