Abstract: A sensor is provided. The sensor includes a conductive substrate having side-walls; a dielectric layer overlaying a first surface of the conductive substrate, the dielectric layer including a gate dielectric having a first thickness and a field dielectric having a second thickness; a sensing layer overlaying a first surface of the gate dielectric; a non-conductive carrier wherein a second surface of the conductive substrate overlays a portion of the non-conductive carrier; and an insulating layer conformally coating at least the side-walls of the conductive substrate, wherein a first surface of the sensing layer is uncoated by the insulating layer.

Abstract: A sensor comprises two photodiodes sensitive to different wavelengths. The photodiodes or detectors are stacked in a vertical relationship to each other. A bandpass filter is provided to limit the wavelengths of light reaching the detectors. The photodiodes are formed of various combinations of materials such as AlGaN or InGaN, or different compositions of the same material. Charge detectors are coupled to each detector to provide a signal representative of the amount of radiation detected in their corresponding bandwidths. A biological sample is provided proximate the filter. A laser is used to illuminate the biological sample to create biofluorescence corresponding to intrinsic tryptophan of bacteria.

Abstract: A method for growing a single crystal GaN film at least 2 microns thick on a Si substrate is disclosed. The method includes growing a prelayer, a buffer layer including AlN on the Si substrate and a plurality of GaN layers and AlN layers deposited alternatively on the top of the AlN buffer layer. By controlling the deposition conditions and timings of the plurality of GaN layers and AlN layers, the single crystal GaN film can be grown thicker than 2 microns without cracks or pits.

Abstract: A method for growing a single crystal GaN film at least 2 microns thick on a Si substrate is disclosed. The method includes growing a prelayer, a buffer layer including AlN on the Si substrate and a plurality of GaN layers and AlN layers deposited alternatively on the top of the AlN buffer layer. By controlling the deposition conditions and timings of the plurality of GaN layers and AlN layers, the single crystal GaN film can be grown thicker than 2 microns without cracks or pits.

Abstract: A sensor comprises two photodiodes sensitive to different wavelengths. The photodiodes or detectors are stacked in a vertical relationship to each other. A bandpass filter is provided to limit the wavelengths of light reaching the detectors. The photodiodes are formed of various combinations of materials such as AlGaN or InGaN, or different compositions of the same material. Charge detectors are coupled to each detector to provide a signal representative of the amount of radiation detected in their corresponding bandwidths. A biological sample is provided proximate the filter. A laser is used to illuminate the biological sample to create biofluorescence corresponding to intrinsic tryptophan of bacteria.

Abstract: A p-i-n photodiode having a high responsivity and quantum efficiency due to an AlGaN heterojunction where photons are absorbed within the p-n junction thereby eliminating carrier losses due to surface recombination and diffusion processes. Ultraviolet light comes through a transparent substrate, such as sapphire, a transparent AlN buffer and an n-doped AlGaN layer, and to an undoped AlGaN layer where the light is absorbed. The undoped layer is sandwiched between the n-doped AlGaN layer and a p-doped AlGaN layer. Metal contacts are formed on the doped layers to obtain the current caused by the absorbed light in the undoped layer. The mole fractions of the Al and Ga in the undoped and doped layers may be adjusted to obtain a desired wavelength bandpass of light to be detected.

Abstract: A GaN/AlGaN heterojunction bipolar phototransistor having AlGaN contact, i-GaN absorbing, p-GaN base and n-GaN emitter layers formed, in that order, on a UV transparent substrate. The phototransistor has a gain greater than 10.sup.5. From 360 nm to 400 nm, eight orders of magnitude drop in responsivity was achieved. The phototransistor features a rapid electrical quenching of persistent photoconductivity, and exhibits high dark impedance and no DC drift. By changing the frequency of the quenching cycles, the detection speed of the phototransistor can be adjusted to accommodate specific applications. These results represent an internal gain UV detector with significantly improved performance over GaN based photo conductors.

Abstract: A cadmium telluride boule encapsulated with an encapsulant material consisting of about 80% by volume of powdered beta-phase calcium sulfate hemihydrate, about 20% by volume of powdered alpha-phase calcium sulfate hemihydrate and water. This specially encapsulated boule can then be sawn with a multiblade wafering apparatus used to simultaneously saw the boule into multiple substrate wafers.

Abstract: A cadmium telluride boule encapsulated with an encapsulant material consisting of about 80% by volume of powdered beta-phase calcium sulfate hemihydrate, about 20% by volume of powdered alpha-phase calcium sulfate hemihydrate and water. This specially encapsulated boule can then be sawn with a multiblade wafering apparatus used to simultaneously saw the boule into multiple substrate wafers.